TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
AQHVxx-01LTG-C Series, 300W Discrete Bidirectional TVS Diode
RoHS
Pb GREEN
Description
This AQHVxx-01LTG-C series provides a highly effective
ESD, EFT, and lightning surge protection component. It
is ideally suited for power interfaces, passenger charging
interfaces, LED lighting modules, and low speed I/Os.
Its rating of ±30kV ESD exceeds the maximum ESD rating
requirements as defined in the IEC 61000-4-2 international
standard without suffering any performance degradation.
The AQHV12-C can withstand up to 10A of surge current
as defined by IEC 61000-4-5 2nd edition providing low
voltage clamping levels during lightning induced events.
Pinout
Features
• ESD, IEC 61000-4-2,
1
±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 40A
(5/50ns)
• Lightning, 10A (8/20μs as
defined in IEC 61000-4-5
2nd edition) for AQHV12-C
• Low leakage current
• AEC-Q101 qualified
• Moisture Sensitivity
Level(MSL -1)
• Halogen free, lead free
and RoHS compliant
• Low clamping voltage
2
• PPAP capable
This component is bidirectional
Applications
Functional Block Diagram
1
2
• LED Lighting Modules
• RS232 / RS485
• Portable Instrumentation
• CAN and LIN Bus
• General Purpose I/O
• Automotive application
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 07/08/19
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Ppk
Peak Pulse Power (tp=8/20μs)
300
Units
W
TOP
Operating Temperature
-40 to 150
°C
TSTOR
Storage Temperature
-55 to 150
°C
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
AQHV12-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
VRWM
IR=1μA
Breakdown Voltage
VBR
IR=1mA
Reverse Leakage Current
ILEAK
V
V
50
21
V
IPP=10A, tP=8/20μs, I/O to I/O
27
30
V
0.34
RDYN
TLP, tp=100ns, I/O to I/O
Ipp
tp=8/20µs
CI/O-I/O
12
5
Peak Pulse Current1
Diode Capacitance
15
Units
18
Dynamic Resistance2
1
13.3
Max
VR=12V
VC
VESD
Typ
IPP=1A, tp=8/20µs, I/O to I/O
Clamp Voltage1
ESD Withstand Voltage1
Min
nA
Ω
10
A
IEC 61000-4-2 (Contact Discharge)
±30
kV
IEC 61000-4-2 (Air Discharge)
±30
kV
Reverse Bias=0V, f=1MHz
27
30
pF
AQHV15-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Min
Typ
16.7
19.5
Max
Reverse Standoff Voltage
VRWM
IR=1μA
Breakdown Voltage
VBR
IR=1mA
Reverse Leakage Current
ILEAK
VR=15V
5
50
nA
Clamp Voltage1
VC
IPP=1A, tp=8/20µs, I/O to I/O
23.5
27
V
IPP=7A, tp=8/20µs, I/O to I/O
33.5
37
Dynamic Resistance2
RDYN
TLP, tp=100ns, I/O to I/O
0.36
Peak Pulse Current1
Ipp
tp=8/20µs
ESD Withstand Voltage1
VESD
Diode Capacitance1
CI/O-I/O
15
±30
IEC 61000-4-2 (Air Discharge)
±30
Reverse Bias=0V, f=1MHz
V
V
V
Ω
7
IEC 61000-4-2 (Contact Discharge)
Units
A
kV
kV
21
24
pF
Typ
Max
Units
24.0
V
AQHV24-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
VRWM
IR=1μA
Min
Breakdown Voltage
VBR
IR=1mA
Reverse Leakage Current
ILEAK
VR=24V
5
50
nA
Clamp Voltage1
VC
IPP=1A, tp=8/20µs, I/O to I/O
35.5
40
V
IPP=5A, tp=8/20µs, I/O to I/O
49.5
55
V
0.52
Dynamic Resistance
RDYN
TLP, tp=100ns, I/O to I/O
Peak Pulse Current1
Ipp
tp=8/20µs
2
ESD Withstand Voltage1
VESD
Diode Capacitance1
CI/O-I/O
26.7
V
Ω
5.0
IEC 61000-4-2 (Contact Discharge)
±25
IEC 61000-4-2 (Air Discharge)
±30
Reverse Bias=0V, f=1MHz
29.5
A
kV
kV
15
17
pF
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 07/08/19
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
AQHV36-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
VRWM
IR=1μA
Breakdown Voltage
VBR
IR=1mA
Reverse Leakage Current
ILEAK
Clamp Voltage1
VC
Dynamic Resistance2
RDYN
Peak Pulse Current1
Ipp
ESD Withstand Voltage1
VESD
Diode Capacitance1
CI/O-I/O
Min
Typ
Max
Units
36.0
40
V
43.5
V
VR=36V
5
50
nA
IPP=1A, tp=8/20µs, I/O to I/O
52.5
58
V
IPP=3A, tp=8/20µs, I/O to I/O
67
72
TLP, tp=100ns, I/O to I/O
1.27
V
Ω
tp=8/20µs
3.0
IEC 61000-4-2 (Contact Discharge)
±15
IEC 61000-4-2 (Air Discharge)
±20
A
kV
kV
Reverse Bias=0V, f=1MHz
11.5
13
pF
Note:
1
Parameter is guaranteed by design and/or component characterization.
2
Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
8/20μs Pulse Waveform
Capacitance vs. Reverse Bias
110%
30.0
100%
90%
80%
20.0
AQHV12-C
15.0
Percent of IPP
Capacitance (pF)
25.0
AQHV15-C
10.0
AQHV24-C
AQHV36-C
5.0
0.0
70%
60%
50%
40%
30%
20%
10%
0
4
8
12
16
20
24
28
32
36
Bias Voltage (V)
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Time (μs)
AQHV12-C Positive Transmission Line Pulsing(TLP) Plot
AQHV12-C Negative Transmission Line Pulsing(TLP) Plot
20
0
15
-5
TLP Current (A)
TLP Current (A)
0%
10
-10
-15
5
-20
0
0
5
10
15
20
TLP Voltage (V)
25
30
-30
-25
-20
-15
-10
-5
0
TLP Voltage (V)
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 07/08/19
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
AQHV15-C NegativeTransmission Line Pulsing(TLP) Plot
20
0
15
-5
TLP Current (A)
TLP Current (A)
AQHV15-C Positive Transmission Line Pulsing(TLP) Plot
10
-10
-15
5
-20
0
0
5
10
15
20
25
30
35
-35
-25
TLP Voltage (V)
-15
-10
-5
0
AQHV24-C Negative Transmission Line Pulsing(TLP) Plot
20
0
15
-5
TLP Current (A)
TLP Current (A)
AQHV24-C Positive Transmission Line Pulsing(TLP) Plot
10
-10
-15
5
-20
0
0
10
20
30
40
50
-50
-40
AQHV36-C Positive Transmission Line Pulsing(TLP) Plot
-30
-20
-10
0
TLP Voltage (V)
TLP Voltage (V)
AQHV36-C Negative Transmission Line Pulsing(TLP) Plot
15
0
TLP Current (A)
TLP Current (A)
-20
TLP Voltage (V)
10
5
-5
-10
-15
0
0
20
40
TLP Voltage (V)
60
80
-80
-60
-40
-20
0
TLP Volatge (V)
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 07/08/19
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
AQHV12-C +8kV Contact ESD Clamping Voltage
AQHV12-C -8kV Contact ESD Clamping Voltage
AQHV15-C +8kV Contact ESD Clamping Voltage
AQHV15-C -8kV Contact ESD Clamping Voltage
AQHV24-C +8kV Contact ESD Clamping Voltage
AQHV24-C -8kV Contact ESD Clamping Voltage
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 07/08/19
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
AQHV36-C +8kV Contact ESD Clamping Voltage
AQHV36-C -8kV Contact ESD Clamping Voltage
Soldering Parameters
Pb – Free assembly
Pre Heat
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
60 – 180 secs
- Time (min to max) (ts)
Average ramp up rate (Liquidus) Temp (TL) to peak
3°C/second max
TS(max) to TL - Ramp-up Rate
3°C/second max
Reflow
- Temperature (TL) (Liquidus)
217°C
- Temperature (tL)
60 – 150 seconds
Peak Temperature (TP)
260
Time within 5°C of actual peak Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
+0/-5
°C
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
260°C
Part Marking System
1
B*
tP
TP
Temperature
Reflow Condition
TL
TS(max)
tL
Preheat
TS(min)
25
Critical Zone
TL to TP
Ramp-up
Ramp-do
Ramp-down
tS
time to peak temperature
Time
Product Characteristics
2
Lead Plating
Matte Tin
Lead Material
Copper Alloy
Substrate Material
Silicon
Body Material
Molded Compound
Flammability
UL Recognized compound meeting
flammability rating V-0
2: AQHV12-C
5: AQHV15-C
4: AQHV24-C
6: AQHV36-C
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 07/08/19
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
Part Numbering System
Ordering Information
AQHV ** – 01 L T G
–C
Part Number
TVS Diode Arrays
(SPA® Automotive
Grade Diodes)
E2
G= Green
Voltage
D
AQHV15-01LTG-C
T= Tape & Reel
2
AQHV24-01LTG-C
Package
b
Number of
Channels
1
Min. Order Qty.
SOD523
5000
AQHV12-01LTG-C
Bidirectional
E
Package
AQHV36-01LTG-C
L: SOD523
E1
Top View
Package Dimensions — SOD-523
θ
Max
Min
Max
A
0.51
0.77
0.020
0.030
A1
0.50
0.70
0.020
0.028
b
0.25
0.35
0.010
0.014
c
0.08
0.15
0.003
0.006
D
0.70
0.90
0.028
0.035
E
1.10
1.30
0.043
0.051
E1
1.50
1.70
0.059
0.067
Side View
0.60mm
E2
E
D
1
2
b
0.50mm
E2
1.40mm
Inches
Min
A
A1
Side View
L
c
θ
Millimeters
Symbol
Recommended Soldering pad layout
E1
L
Drawing#: L01-B
Top View
Ɵ
0.20 REF
0.01
0.001 REF
0.07
0.000
7O REF
0.003
7O REF
θ
c
A
A1
Embossed Carrier Tape & Reel Specification — SOD-523
θ
L
Symbol
Side View
0.60mm
0.50mm
1.40mm
Recommended Soldering pad layout
Drawing#: L01-B
,Ref.
,Ref.
Component Orientation in Tape
,Ref.
Millimeters
Inches
Min
Max
Min
Max
A0
0.91
1.01
0.036
0.040
B0
1.89
1.99
0.074
0.078
D0
1.50
1.60
0.059
0.063
D1
0.40
0.60
0.016
0.024
E1
1.65
1.85
0.065
0.073
F
3.40
3.60
0.134
0.142
P0
3.90
4.10
0.154
0.161
P
1.90
2.10
0.075
0.083
P1
1.95
2.05
0.077
0.081
K0
0.68
0.78
0.027
0.031
T
0.17
0.23
0.007
0.009
W
7.90
8.30
0.311
0.327
Side View
8mm TAPE AND REEL
Pin1
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 07/08/19