AQHV36-01ETG-C

TVS Diode Arrays (SPA®® Diodes) Series General Purpose ESD Protection - AQHV-C SPHV-C Series AQHV-C Series 200W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The AQHV-C series is designed to provide an option for very fast acting, high performance over-voltage protection devices. Ideally suited for power interfaces, passenger charging interfaces, and well as LED lighting modules, and low speed I/Os. It will protect sensitive equipment from damage due to electrostatic discharge (ESD) and other overvoltage transients. The AQHV-C series can safely absorb repetitive ESD strikes above the maximum level of the IEC 610004-2 international standard (Level 4,  ±8kV contact discharge)  without performance degradation and safely conduct up to 8A (AQHV12-C) of induced surge current (IEC 61000-4-5 2nd edition, tP=8/20μs) with very low clamping voltages. Features Pinout • ESD, IEC 61000-4-2, ±30kV contact, ±30kV air • EFT, IEC 61000-4-4, 40A 1 (5/50ns) • Lightning, 8A (8/20 as defined in IEC 61000-4-5 2nd edition) for AQHV12-C • Low clamping voltage 2 • Small SOD882 packaging helps save board space • AEC-Q101 qualified • Moisture Sensitivity Level(MSL -1) • Halogen free, lead free and RoHS compliant • PPAP capable Applications Functional Block Diagram 1 • Low leakage current 2 • LED Lighting Modules • RS232 / RS485 • Portable Instrumentation • CAN and LIN Bus • General Purpose I/O • Automotive application Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/14/18 SPHV-C Series TVS Diode Arrays (SPA®® Diodes) General Purpose ESD Protection - AQHV-C SPHV-C Series Series Absolute Maximum Ratings Symbol Parameter Value Units 200 W Ppk Peak Pulse Power (tp=8/20μs) TOP Operating Temperature -40 to 150 °C TSTOR Storage Temperature -55 to 150 °C Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. AQHV12-C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA Breakdown Voltage VBR IR=1mA Leakage Current ILEAK VR=12V 1.0 μA IPP=1A, tp=8/20µs, Fwd 19.0 V IPP=8A, tP=8/20μs, Fwd 25.0 V Reverse Standoff Voltage Clamp Voltage1 VC Dynamic Resistance 2 RDYN TLP, tp=100ns, I/O to GND Ipp tp=8/20µs Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance 1 VESD CD-GND Min Typ Max Units 12.0 V 13.3 V 0.48 Ω 8.0 A IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Reverse Bias=0V, f=1MHz 30 pF AQHV15-C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA Breakdown Voltage VBR IR=1mA Leakage Current ILEAK Reverse Standoff Voltage VC Clamp Voltage1 Dynamic Resistance2 ESD Withstand Voltage1 Diode Capacitance1 Revision: 02/14/18 V 16.7 V 1.0 μA V IPP=5A, tp=8/20µs, Fwd tp=8/20µs ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Units 15.0 22.0 Ipp CI/O-GND Max VR=15V TLP, tp=100ns, I/O to GND VESD Typ IPP=1A, tp=8/20µs, Fwd RDYN Peak Pulse Current Min 30.0 0.43 5.0 IEC 61000-4-2 (Contact Discharge) ±30 IEC 61000-4-2 (Air Discharge) ±30 Reverse Bias=0V, f=1MHz V Ω A kV kV 24 pF SPHV-C Series TVS Diode Arrays (SPA®® Diodes) General Purpose ESD Protection - AQHV-C SPHV-C Series Series AQHV24-C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA Breakdown Voltage VBR IR=1mA Leakage Current ILEAK Reverse Standoff Voltage VC Clamp Voltage1 Dynamic Resistance2 Diode Capacitance1 Units 24.0 V V VR=24V 1.0 μA 36.0 V IPP=3A, tp=8/20µs, Fwd Ipp tp=8/20µs 50.0 V 0.65 Ω 3.0 IEC 61000-4-2 (Contact Discharge) ±24 IEC 61000-4-2 (Air Discharge) ±30 CI/O-GND Max IPP=1A, tp=8/20µs, Fwd TLP, tp=100ns, I/O to GND VESD Typ 26.7 RDYN Peak Pulse Current ESD Withstand Voltage1 Min A kV kV Reverse Bias=0V, f=1MHz 17 pF Max Units 36.0 V AQHV36-C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA Breakdown Voltage VBR IR=1mA Leakage Current ILEAK VR=36V 1.0 μA IPP=1A, tp=8/20µs, Fwd 52.0 V IPP=2A, tp=8/20µs, Fwd 65.0 V Reverse Standoff Voltage VC Clamp Voltage1 Dynamic Resistance RDYN 2 Peak Pulse Current Diode Capacitance VESD 40.0 V 1.33 Ω tp=8/20µs 2.0 A IEC 61000-4-2 (Contact Discharge) ±15 kV IEC 61000-4-2 (Air Discharge) ±20 kV CI/O-GND 1 Typ TLP, tp=100ns, I/O to GND Ipp ESD Withstand Voltage1 Min Reverse Bias=0V, f=1MHz 13 pF Note: 1 2 Parameter is guaranteed by design and/or component characterization. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 100 90 % of Rated Power I PP Peak Pulse Power - Ppk (kW) 10 1 0.1 80 70 60 50 40 30 20 10 0.01 0.1 1 10 100 Pulse Duration - t p (µs) ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/14/18 1000 0 0 25 50 75 100 125 150 (o Ambient Temperature - TA C) SPHV-C Series TVS Diode Arrays (SPA®® Diodes) General Purpose ESD Protection - AQHV-C SPHV-C Series Series 8/20μs Pulse Waveform AQHV12-C Transmission Line Pulsing(TLP) Plot 20 100% 18 90% 16 80% 14 TLP Current (A) Percent of IPP 110% 70% 60% 50% 12 10 8 40% 6 30% 4 20% 2 10% 0% 0.0 5.0 10.0 15.0 20.0 25.0 0 30.0 0 5 10 Time (μs) 20 20 18 18 16 16 14 14 12 10 8 8 6 4 2 2 0 15 20 30 10 4 10 25 12 6 5 20 AQHV24-C Transmission Line Pulsing(TLP) Plot TLP Current (A) TLP Current (A) AQHV15-C Transmission Line Pulsing(TLP) Plot 0 15 TLP Voltage (V) 25 30 35 TLP Voltage (V) 0 0 5 10 15 20 25 30 35 40 45 50 55 TLP Voltage (V) AQHV36-C Transmission Line Pulsing(TLP) Plot 16 14 TLP Current (A) 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 TLP Voltage (V) ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/14/18 SPHV-C Series TVS Diode Arrays (SPA®® Diodes) General Purpose ESD Protection - AQHV-C SPHV-C Series Soldering Parameters Pb – Free assembly Reflow Condition - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Part Marking System 1 B* 2 AQHV ** – 01 E T G Ramp-do Ramp-down Preheat TS(min) 25 tS time to peak temperature Time Lead Plating Pre-Plated Frame Lead Material Copper Alloy Substrate material Silicon Body Material Molded Compound Flammability UL Recognized compound meeting flammability rating V-0 Part Number –C Bidirectional G= Green T= Tape & Reel Package E: SOD882 Revision: 02/14/18 tL Ordering Information TVS Diode Arrays (SPA® Automotive Grade Diodes) ©2018 Littelfuse, Inc. Specifications are subject to change without notice. TL TS(max) Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. Part Numbering System Number of Channels Critical Zone TL to TP Ramp-up Product Characteristics 2: AQHV12-C 5: AQHV15-C 4: AQHV24-C 6: AQHV36-C Voltage Temperature Pre Heat tP TP 150°C - Temperature Min (Ts(min)) Package AQHV12-01ETG-C AQHV15-01ETG-C AQHV24-01ETG-C AQHV36-01ETG-C Marking Min. Order Qty. B2 SOD882 B5 B4 10000 B6 SPHV-C Series TVS Diode Arrays (SPA®® Diodes) General Purpose ESD Protection - AQHV-C SPHV-C Series Package Dimensions — SOD882 Symbol Package SOD882 JEDEC MO-236 Millimeters 0.325 0.650 0.650 Typ Max Min Typ Max A 0.90 1.00 1.10 0.037 0.039 0.041 B 0.50 0.60 0.70 0.022 0.024 0.026 C 0.40 0.50 0.60 0.016 0.020 0.024 0.45 D 0.975 Recommended Soldering Pad Layout Inches Min 0.325 0.018 E 0.20 0.25 0.35 0.008 0.010 0.012 F 0.45 0.50 0.55 0.018 0.020 0.022 Embossed Carrier Tape & Reel Specification Symbol Millimeters A 0.70+/-0.045 B 1.10+/-0.045 C 0.65+/-0.045 d 1.55+/-0.10 E 1.75+/-0.05 F 3.50+/-0.05 P 2.00+/-0.10 P0 4.00+/-0.10 P1 2.00+/-0.10 W 8.00 + 0.30 -0.10 Top mark and pin 1 direction in Tape and Reel Feeding Direction ,Ref. 1 BX ,Ref. 2 8mm TAPE AND REEL ,Ref. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/14/18 SPHV-C Series TVS Diode Arrays (SPA®® Diodes) General Purpose ESD Protection - SM712 ©2014 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/14/18 SM712 Series 1038