Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
BTA08-600BW3G, BTA08-800BW3G
Pb
Description
Designed for high performance full-wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Features
• Blocking Voltage to 800 V
• On-State Current Rating
of 8 A RMS at 80°C
• Uniform Gate Trigger
Currents in Three
Quadrants
• High Immunity to dV/
dt − 2000 V/s minimum at
125°C
• Minimizes Snubber
Networks for Protection
• Industry Standard TO220AB Package
• High Commutating dI/
dt − 1.5 A/ms minimum at
125°C
• Internally Isolated (2500
VRMS)
• These Devices are
Pb−Free and are RoHS
Compliant
Functional Diagram
Pin Out
MT 2
MT 1
G
CASE 221A
STYLE 4
1
2
Additional Information
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/17/19
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VDRM,
VRRM
600
800
V
IT
8.0
A
90
A
BTA08–600BW3G
BTA08–800BW3G
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C)
(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC = 25°C)
ITSM
Circuit Fusing Consideration (t = 8.3 ms)
I2t
36
A²sec
VDSM/ VRSM
VDSM/ VRSM
+100
V
IGM
4.0
A
W
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms)
Peak Gate Current (TJ = 125°C, t = 20ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
PG(AV)
20
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +125
°C
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso
2500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Junction−to−Case (AC)
Junction−to−Ambient
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Symbol
Value
Unit
RƟJC
RƟJA
2.5
63
°C/W
TL
260
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Characteristic
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
Symbol
Min
Typ
Max
IDRM,
IRRM
Unit
-
-
0.005
-
-
2.0
mA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Forward On-State Voltage (Note 2) (ITM = ±22.5 A Peak)
VTM
MT2(+), G(+)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
MT2(+), G(−)
IGT
MT2(−), G(−)
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
IH
MT2(+), G(+)
Latching Current (VD = 12 V, IG = 50 mA)
MT2(+), G(−)
IL
MT2(−), G(−)
Gate Non−Trigger Voltage (TJ = 125°C)
Typ
Max
Unit
−
−
1.55
V
2.5
−
50
2.5
−
50
2.5
−
50
−
−
60
−
−
70
−
−
90
−
−
70
0.5
−
1.7
0.5
−
1.1
MT2(−), G(−)
0.5
−
1.1
MT2(+), G(+)
0.2
−
−
MT2(+), G(+)
Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)
Min
MT2(+), G(−)
MT2(+), G(−)
MT2(−), G(−)
VGT
tgt
0.2
−
−
0.2
−
−
mA
mA
mA
V
V
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/17/19
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
(dI/dt)c
3.0
−
−
A/ms
Critical Rate of Rise of On−State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤100 ns)
dI/dt
−
−
50
A/µs
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dV/dt
1500
−
−
V/µs
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
+C urrent
V TM
on stat e
I RR M at V RR M
Holding Current
Quadrant Definitions for a Triac
IH
Quadrant 3
Main Terminal 2
MT2 POSITIVE
(Positive Half Cycle)
+
+V oltage
I DR M at V DR M
V TM
MT 1
MT 1
RE F
RE F
( ) MT 2
( ) MT 2
I GT
Q u a dr a n t III
off stat e
Q ua dr a nt I
(+) I GT
GA TE
( ) I GT
GA TE
IH
(+) MT 2
(+) MT 2
Q u a dr a n t II
Quadrant 1
Main Terminal 2 +
+I GT
Q u a dr a n t IV
(+) I GT
GA TE
( ) I GT
GA TE
MT 1
MT 1
RE F
RE F
MT2 NEGA TIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/17/19
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
12
)
DC
120
= 120, 90, 60, 30 °
P AV, AV ERAGE POWER (W
T C , CASE TEMPER
AT URE ( °C)
125
115
= 18 0°
110
DC
105
180 °
8
120 °
6
4
90°
60°
= 30 °
2
0
100
I T(RMS ), RMS ON-S
TATE CURRENT (A
I T(RMS) , ON-S TATE CURRENT (A
)
)
Figure 4. Thermal Response
r(t), TRANSIEN T THERMAL RESIST ANCE (NORMALIZED)
Figure 3. On−State Characteristics
100
10
1
0. 1
0.01
0. 1
1
10
100
1000
1· 10 4
t, TIME (ms)
Figure 5. Hold Current Variation
55
1
0.1
IH, HOLDING CURRENT (mA)
IT, INSTANTANEOUS ON STATE CURRENT (A)
10
00
.5
11
.5
22
.5
33
.5
44
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
.5
5
45
35
MT2 POSITIVE
25
15
5 40
MT2 NEGATIVE
25
10
52
03
55
06
58
09
51 10 125
T , JUNCTION TEMPERATURE (°C)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/17/19
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Typical Characteristics
Figure 6. Gate Trigger Current Variation
2.00
VD = 12 V
RL = 30
10
GATE TRIGGER VOLTAGE (V)
IGT, GATE TRIGGER CURRENT (mA)
100
Figure 7. Gate Trigger Voltage Variation
Q1
Q2
Q3
1
40
25
10 52
03
55
06
58
09
1.60
Q1
1.40
1.20
1.00
Q3
0.80
0.60
0.40
51 10 125
VD = 12 V
RL = 30
1.80
Q2
40
25
TJ , JUNCTION TEMPERA TURE (°C)
10 52
03
55
06
58
09
51 10 125
TJ , JUNCTION TEMPERA TURE °(C)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
µ
Figure 10. Latching Current Variation
5000
VD = 800 Vpk
TJ = 125°C
4K
3K
2K
1K
0
10
100
1000
10000
R G, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS)
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
LL
200VRMS
ADJUST FOR
ITM, 60 Hz VAC
1N4007
CHARGE
TRIGGER
CHARGE
CONTROL
CL
TRIGGER CONTROL
MEASURE
I
+
200V
MT2
1N914 51
G
MT1
Note: Component values are for verification of rated (di/dt
)c. See AN1048 for additional information
.
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/17/19
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Dimensions
Part Marking System
4
SEATING
PLANE
B
F
4
Q
12
C
T
S
A
U
3
1
H
2
3
BTA08-xBWG
YMAXX
TO 220AB
CASE 221A
STYLE 12
K
Z
x =6 or 8
Y =Year
M =Month
A =Assembly Site
XX =Lot Serial Code
G =Pb-Free Package
R
L
V
J
G
D
N
Dim
Inches
Millimeters
Pin Assignment
Min
Max
Min
Max
1
Main Terminal 1
A
0.590
0.620
14.99
15.75
2
Main Terminal 2
B
0.380
0.420
9.65
10.67
3
Gate
C
0.178
0.188
4.52
4.78
4
No Connection
D
0.025
0.035
0.64
0.89
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.41
2.67
H
0.110
0.130
2.79
3.30
J
0.018
0.024
0.46
0.61
K
0.540
0.575
13.72
14.61
L
0.060
0.075
1.52
1.91
N
0.195
0.205
4.95
5.21
Q
0.105
0.115
2.67
2.92
R
0.085
0.095
2.16
2.41
S
0.045
0.060
1.14
1.52
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
Ordering Information
Device
Package
Shipping
BTA08-600BW3G
TO-220AB
(Pb-Free)
500 Units / Retail
BTA08-800BW3G
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/17/19
