BTA12-600CW3G

Thyristors Surface Mount – 800V > BTA12-600CW3G, BTA12-800CW3G BTA12-600CW3G, BTA12-800CW3G Pb Description Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating of 12 A RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 1500 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 1.5 A/ms minimum at 125°C • Internally Isolated (2500 VRMS) Pin Out • These Devices are Pb−Free and are RoHS Compliant Functional Diagram MT 2 MT 1 G CASE 221A STYLE 4 1 2 Additional Information Datasheet Resources Samples © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19 Thyristors Surface Mount – 800V > BTA12-600CW3G, BTA12-800CW3G Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C) Symbol Value Unit VDRM, VRRM 600 800 V 12 A 105 A A²sec BTA12−600CW3G BTA12−800CW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT (RMS) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM Circuit Fusing Consideration (t = 8.3 ms) I2t 46 VDSM/ VRSM VDSM/ VRSM +100 V IGM 4.0 A Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PG(AV) 20 W Average Gate Power (TJ = 125°C) Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) PG(AV) 1.0 W Operating Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso 2500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Junction−to−Case (AC) Junction−to−Ambient Thermal Resistance, Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Symbol Value Unit R8JC R8JA 2.5 60 °C/W TL 260 °C Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions) Characteristic Peak Repetitive Blocking Current (VD = VDRM = VRRM; Gate Open) TJ = 25°C TJ = 125°C Symbol Min Typ Max IDRM, IRRM Unit - - 0.005 - - 2.0 mA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Forward On-State Voltage (Note 2) (ITM = ±17 A Peak) VTM MT2(+), G(+) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω) MT2(+), G(−) IGT MT2(−), G(−) Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA) IH MT2(+), G(+) Latching Current (VD = 24 V, IG = 42 mA) MT2(+), G(−) IL MT2(−), G(−) MT2(+), G(+) Gate Trigger Voltage (VD = 12 V, RL = 30 Ω) MT2(+), G(−) VGT MT2(−), G(−) MT2(+), G(+) Gate Non−Trigger Voltage (TJ = 125°C) MT2(+), G(−) MT2(−), G(−) VGD Min Typ Max Unit − − 1.55 V 2.0 − 35 2.0 − 35 2.0 − 35 − − 45 − − 50 − − 80 − − 50 0.5 − 1.7 0.5 − 1.1 0.5 − 1.1 0.2 − − 0.2 − − 0.2 − − mA mA mA V V 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19 Thyristors Surface Mount – 800V > BTA12-600CW3G, BTA12-800CW3G Dynamic Characteristics Characteristic Symbol Min Typ Max Unit (dI/dt)c 2.5 − − A/ms Critical Rate of Rise of On−State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − − 50 A/µs Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 2000 − − V/µs Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH +C urrent V TM on stat e I RR M at V RR M Holding Current Quadrant Definitions for a Triac IH Quadrant 3 Main Terminal 2 MT2 POSITIVE (Positive Half Cycle) + +V oltage I DR M at V DR M V TM MT 1 MT 1 RE F RE F ( ) MT 2 ( ) MT 2 I GT Q u a dr a n t III off stat e Q ua dr a nt I (+) I GT GA TE ( ) I GT GA TE IH (+) MT 2 (+) MT 2 Q u a dr a n t II Quadrant 1 Main Terminal 2 + +I GT Q u a dr a n t IV (+) I GT GA TE ( ) I GT GA TE MT 1 MT 1 RE F RE F MT2 NEGA TIVE (Negative Half Cycle) All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used . © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19 Thyristors Surface Mount – 800V > BTA12-600CW3G, BTA12-800CW3G Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 20 180 ° 80 ) 95 16 P AV, A VERAGE POWER (W 120 °, 90 °, 60 °, 30 ° 110 14 2 4 6 Figure 3. On−State Characteristics 8 10 120° 10 8 90° 60° 6 30° 4 2 0 0 180° 12 DC 65 DC 18 12 0 2 4 6 8 I T(RMS ), ON-ST ATE CURRENT (A 10 12 ) Figure 4. Thermal Response r(t), TRANSIEN T THERMAL RESIST ANCE (NORMALIZED) T C , CASE TEMPER AT URE ( °C) 125 1 0. 1 0.01 0. 1 1 10 100 1000 1· 10 4 t, TIME (ms) Figure 5. Hold Current Variation © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19 Thyristors Surface Mount – 800V > BTA12-600CW3G, BTA12-800CW3G Figure 7. Gate Trigger Voltage Variation Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential Waveform) Figure 10. Latching Current Variation µ Figure 6. Gate Trigger Current Variation 5000 VD = 800 Vpk TJ = 125°C 4K 3K 2K 1K 0 10 100 1000 10000 R G, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS) Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19 Thyristors Surface Mount – 800V > BTA12-600CW3G, BTA12-800CW3G Dimensions Part Marking System 4 SEATING PLANE B F 4 Q 12 C T S BTA12-xCWG YMAXX A U 3 1 H 2 3 TO 220AB CASE 221A STYLE 12 K Z x =6 or 8 Y =Year M =Month A =Assembly Site XX =Lot Serial Code G =Pb-Free Package R L V J G D N Dim A B Inches Pin Assignment Millimeters Min Max Min Max 1 Main Terminal 1 0.590 0.620 14.99 15.75 2 Main Terminal 2 Gate No Connection 0.380 0.420 9.65 10.67 3 4 C 0.178 0.188 4.52 4.78 D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 J 0.018 0.024 0.46 0.61 K 0.540 0.575 13.72 14.61 L 0.060 0.075 1.52 1.91 N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 Ordering Information Device BTA12-600CW3G BTA12-800CW3G Package TO−220AB (Pb−Free) TO−220AB (Pb−Free) Shipping 500 Units / Box 500 Units / Box 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19