Thyristors
Surface Mount – 600V-800V > BTA16-600BW3G, BTA16-800BW3G,
BTA16-600BW3G, BTA16-800BW3G,
Pb
Description
Designed for high performance full−wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Features
• Blocking Voltage to 800 V
• On-State Current Rating of 16 A RMS at 80°C
Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 1500 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 4.0 A/ms minimum at 125°C
Pin Out
• Internally Isolated (2500 VRMS)
• These Devices are Pb−Free
Functional Diagram
MT 2
CASE 221A
STYLE 4
1
MT 1
G
2
Additional Information
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/06/19
Thyristors
Surface Mount – 600V-800V > BTA16-600BW3G, BTA16-800BW3G,
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
Symbol
Value
Unit
VDRM,
VRRM
600
800
V
16
A
170
A
BTA16−600BW3G
BTA16−800BW3G
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT
(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC = 25°C)
ITSM
Circuit Fusing Consideration (t = 8.3 ms)
I2t
120
A²sec
VDSM/ VRSM
VDSM/ VRSM
+100
V
IGM
4.0
A
W
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms)
Peak Gate Current (TJ = 125°C, t = 20ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
PG(AV)
20
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +125
°C
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso
2500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Symbol
Value
Unit
RƟJC
RƟJA
2.5
60
°C/W
TL
260
°C
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/06/19
Thyristors
Surface Mount – 600V-800V > BTA16-600BW3G, BTA16-800BW3G,
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Characteristic
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
Symbol
Min
Typ
Max
IDRM,
IRRM
Unit
-
-
0.005
-
-
2.0
mA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Forward On-State Voltage (Note 2) (ITM = ±22.5 A Peak)
VTM
MT2(+), G(+)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
MT2(+), G(−)
Unit
−
−
1.55
V
2.5
−
50
−
50
−
50
−
−
60
−
−
70
−
−
90
MT2(−), G(−)
−
−
70
MT2(+), G(+)
0.5
−
1.7
IH
MT2(+), G(+)
MT2(+), G(−)
MT2(+), G(−)
IL
VGT
MT2(−), G(−)
MT2(+), G(+)
Gate Non−Trigger Voltage (TJ = 125°C)
Max
2.5
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)
Typ
2.5
IGT
MT2(−), G(−)
Latching Current (VD = 12 V, IG = 50 mA)
Min
MT2(+), G(−)
MT2(−), G(−)
tgt
0.5
−
1.1
0.5
−
1.1
0.2
−
−
0.2
−
−
0.2
−
−
mA
mA
mA
V
V
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/06/19
Thyristors
Surface Mount – 600V-800V > BTA16-600BW3G, BTA16-800BW3G,
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
(dI/dt)c
4.0
−
−
A/ms
Critical Rate of Rise of On−State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤100 ns)
dI/dt
−
−
50
A/µs
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dV/dt
1500
−
−
V/µs
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
+C urrent
V TM
on stat e
I RR M at V RR M
Holding Current
Quadrant Definitions for a Triac
IH
Quadrant 3
Main Terminal 2
MT2 POSITIVE
(Positive Half Cycle)
+
+V oltage
I DR M at V DR M
V TM
MT 1
MT 1
RE F
RE F
( ) MT 2
( ) MT 2
I GT
Q u a dr a n t III
off stat e
Q ua dr a nt I
(+) I GT
GA TE
( ) I GT
GA TE
IH
(+) MT 2
(+) MT 2
Q u a dr a n t II
Quadrant 1
Main Terminal 2 +
+I GT
Q u a dr a n t IV
(+) I GT
GA TE
( ) I GT
GA TE
MT 1
MT 1
RE F
RE F
MT2 NEGA TIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used
.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/06/19
Thyristors
Surface Mount – 600V-800V > BTA16-600BW3G, BTA16-800BW3G,
Figure 2. On-State Power Dissipation
Figure 3. On−State Characteristics
Figure 4. Thermal Response
1000
°
100
°
°
r(t), TRANSIEN T THERMAL RESIST ANCE (NORMALIZED)
Figure 1. RMS Current Derating
1
0.1
0.01
0.1
1
10
100
4
1000
10
IT
Figure 5. Hold Current Variation
°
1
°
I
20
°
10
0. 1
110
°
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/06/19
Thyristors
Surface Mount – 600V-800V > BTA16-600BW3G, BTA16-800BW3G,
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
100
1. 6
L
L
1. 2
10
1
I
0. 6
1
110
110
°
°
µ
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
5000
VD = 800 Vpk
TJ = 125°C
4K
3K
2K
1K
0
10
100
1000
10000
R G, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS)
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
LL
200VRMS
ADJUST FOR
ITM, 60 Hz VAC
1N4007
CHARGE
TRIGGER
CHARGE
CONTROL
CL
TRIGGER CONTROL
MEASURE
I
+
200V
MT2
1N914 51
G
MT1
Note: Component values are for verification of rated (di/dt
) c. See AN1048 for additional information
.
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/06/19
Thyristors
Surface Mount – 600V-800V > BTA16-600BW3G, BTA16-800BW3G,
Dimensions
Part Marking System
4
SEATING
PLANE
B
F
4
Q
12
C
T
S
A
U
3
1
H
2
3
BTA16-xBWG
YMAXX
TO 220AB
CASE 221A
STYLE 12
K
Z
x =6 or 8
Y =Year
M =Month
A =Assembly Site
XX =Lot Serial Code
G =Pb-Free Package
R
L
V
J
G
D
N
Dim
Inches
Millimeters
Pin Assignment
Min
Max
Min
Max
1
Main Terminal 1
A
0.590
0.620
14.99
15.75
2
Main Terminal 2
B
0.380
0.420
9.65
10.67
3
Gate
C
0.178
0.188
4.52
4.78
4
No Connection
D
0.025
0.035
0.64
0.89
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.41
2.67
H
0.110
0.130
2.79
3.30
J
0.018
0.024
0.46
0.61
K
0.540
0.575
13.72
14.61
L
0.060
0.075
1.52
1.91
N
0.195
0.205
4.95
5.21
Q
0.105
0.115
2.67
2.92
R
0.085
0.095
2.16
2.41
S
0.045
0.060
1.14
1.52
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
Ordering Information
Device
Package
Shipping
BTA16−600BW3G
TO−220AB
(Pb−Free)
500 Units / Rail
BTA16−800BW3G
TO−220AB
(Pb−Free)
500 Units / Rail
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/06/19
