BTA25-800CW3G

BTA25-800CW3G

  • 厂商:

    HAMLIN

  • 封装:

    TO-220-3

  • 描述:

    BTA25-800CW3G

  • 数据手册
  • 价格&库存
BTA25-800CW3G 数据手册
Thyristors 25A Alternistor Triac BTA25-600CW3G, BTA25-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Blocking Voltage to 800 V • On-State Current Rating of 25 A RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/ dt − 500 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO220AB Package • High Commutating dI/ dt − 14 A/ms minimum at 125°C • Internally Isolated (2500 VRMS) • These are Pb−Free Devices and are RoHS Compliant Functional Diagram Pin Out MT 2 MT 1 3 G TO-220AB Case 221 A Style 4 1 2 3 Additional Information Datasheet Resources Samples © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/03/20 Thyristors 25A Alternistor Triac Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDRM, VRRM 600 800 V IT 25 A BTA25−600CW3G BTA25−800CW3G Peak Repetitive Off-State Voltage (Note 1) (Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C) On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 95°C) (RMS) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM Circuit Fusing Consideration (t = 8.3 ms) Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms) 250 A 2 It 260 A²sec VDSM/ VRSM VDSM/ VRSM +100 V Peak Gate Current (TJ = 110°C, t ≤ 20μs) IGM 4.0 W Peak Gate Power (Pulse Width ≤ 20 µs, TC = 80°C) PG(AV) 20 W Average Gate Power (TJ = 110°C) PG(AV) 1.0 W Operating Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso 2500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit RƟJC RƟJA 2.13 60 °C/W TL 260 °C Junction−to−Case (AC) Junction−to−Ambient Thermal Resistance, Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions) Characteristic Peak Repetitive Blocking Current (VD = VDRM = VRRM; Gate Open) TJ = 25°C TJ = 110°C Symbol Min Typ Max IDRM, IRRM - - 0.005 Unit - - 2.0 mA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Forward On-State Voltage (Note 2) (ITM = ±22.5 A Peak) Symbol Min Typ Max Unit VTM − − 1.55 V 2.0 − 35 2.0 − 35 2.0 − 35 − − 50 − − 75 − − 75 − − 75 MT2(+), G(+) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω) MT2(+), G(−) IGT MT2(−), G(−) Holding Current (VD = 12 V, Gate Open, Initiating Current = ±500 mA) IH MT2(+), G(+) Latching Current (VD = 12 V, IG = 12 mA) MT2(+), G(−) IL MT2(−), G(−) MT2(+), G(+) Gate Trigger Voltage (VD = 12 V, RL = 30 Ω) MT2(+), G(−) VGT MT2(−), G(−) MT2(+), G(+) Gate Non−Trigger Voltage (TJ = 110°C) MT2(+), G(−) MT2(−), G(−) VGD 0.5 − 1.3 0.5 − 1.3 0.5 − 1.3 0.2 − − 0.2 − − 0.2 − − mA mA mA V V 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/03/20 Thyristors 25A Alternistor Triac Dynamic Characteristics Characteristic Symbol Min Typ Max Unit (dI/dt)c 2.0 − − A/ms Critical Rate of Rise of On−State Current (TJ = 110°C, f = 120 Hz, IG = 20 mA, tr ≤100 ns) dI/dt − − 50 A/µs Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 110°C) dV/dt 250 − − V/µs Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 110°C, No Snubber) Voltage Current Characteristic of SCR +Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage V TM IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on stat e IRR M at V RR M IH Quadrant 3 Main Terminal 2 Quadrant Definitions for a Triac Quadrant 1 Main Terminal 2 + IH of f stat e +V oltage IDR M at V DR M V TM MT2 POSITIVE (Positive Half Cycle) + (+) MT 2 (+) MT 2 Q u a d r a n t II Q u ad ran t I (+) IGT GA TE ( ) IGT GA TE MT 1 MT 1 RE F RE F ( ) MT 2 ( ) MT 2 IGT Q u a d r a n t III +I GT Q u a d r a n t IV (+) IGT GA TE ( ) IGT GA TE MT 1 MT 1 RE F RE F MT2 NEGA TIVE (Negative Half Cycle) All polarities are referenced to MT1 Witn in-phase signals (using standard AC lines) quadrants I and III are used. © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/03/20 Thyristors 25A Alternistor Triac Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 30 125 PAV, AVERAGE POWER (W) 115 110 105 100 95 90 85 80 0 5 10 15 20 IT(RMS), RMS ON-STATE CURRENT (A) Figure 3. On−State Characteristics 25 20 15 10 5 0 25 0 5 10 15 20 IT(RMS), ON-STATE CURRENT (A) 25 Figure 4. Thermal Response r(t), TRANSIEN T THERMAL RESIST ANCE (NORMALIZED) TC, CASE TEMPERATURE (ϒC) 120 1 0. 1 0.01 0. 1 1 10 100 1000 1· 10 4 t, TIME (ms) Figure 5. Hold Current Variation © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/03/20 Thyristors 25A Alternistor Triac Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential Waveform) Figure 9. Latching Current Variation Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/03/20 Thyristors 25A Alternistor Triac Dimensions Part Marking System 4 SEATING PLANE B F 4 Q 12 C T S A U 3 1 H 2 3 BTA25-xCWG YMAXX TO 220AB CASE 221A STYLE 12 K Z x =6 or 8 Y =Year M =Month A =Assembly Site XX =Lot Serial Code G =Pb-Free Package R L V J G D N Dim Inches Millimeters Pin Assignment Min Max Min Max 1 Main Terminal 1 A 0.590 0.620 14.99 15.75 2 Main Terminal 2 B 0.380 0.420 9.65 10.67 3 Gate C 0.178 0.188 4.52 4.78 4 No Connection D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 J 0.018 0.024 0.46 0.61 K 0.540 0.575 13.72 14.61 L 0.060 0.075 1.52 1.91 N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 Ordering Information Device Package Shipping BTA25−600SW3G TO−220AB (Pb−Free) 500 Units / Rail BTA25−800SW3G TO−220AB (Pb−Free) 500 Units / Rail 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/03/20
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