Thyristors Datasheet
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G
Surface Mount – 800V
Pb
Description
The BTB16 is designed for high performance full-wave AC control
applications where high noise immunity and high commutating
di/dt are required.
Features
■ Blocking Voltage to 800 V
■ On-State Current Rating of 16
Amperes RMS at 80°C
■ Uniform Gate Trigger Currents
in Three Quadrants
■ High Immunity to dV/dt −
1500 V/µs minimum at 125°C
■ Minimizes Snubber Networks
for Protection
■ Industry Standard TO-220AB
Package
■ High Commutating dI/dt − 7.5
A/ms minimum at 125°C
■ These are Pb−Free Devices
Functional Diagram
Additional Information
MT 2
MT 1
G
Resources
Accessories
Samples
Pin Out
CASE 221A
STYLE 4
1
1
2
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/19/21
Thyristors Datasheet
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G
Surface Mount – 800V
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
BTB16−600BW3G
BTB16−700BW3G
BTB16−800BW3G
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C)
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
Value
IT
Unit
600
700
800
16
VDRM,
VRRM
(RMS)
V
A
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC= 25°C)
ITSM
170
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
120
A²sec
VDSM/ VRSM
VDSM/ VRSM +100
V
W
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms)
Peak Gate Current (TJ = 125°C, t ≤ 20µs)
IGM
4.0
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Average Gate Power (TJ = 125°C)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Junction−to−Case (AC)
Junction−to−Ambient
Thermal Resistance
Symbol
Value
Unit
RƟJC
RƟJA
1.9
60
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both
directions)
Characteristic
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
Symbol
Min
Typ
Max
Unit
IDRM,
IRRM
-
-
0.005
2.0
mA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both
directions)
Characteristic
Forward On-State Voltage (Note 2) (ITM = ±17 A Peak)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Symbol
Min
Typ
Max
Unit
VTM
−
2.5
2.5
2.5
−
−
−
−
0.5
0.5
0.5
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.55
50
50
50
60
70
90
70
1.7
1.1
1.1
−
−
−
V
IGT
IH
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Latching Current (VD = 12 V, IG = 50 mA)
Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)
Gate Non−Trigger Voltage (TJ = 125°C)
IL
VGT
VGD
mA
mA
mA
V
V
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
2
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/19/21
Thyristors Datasheet
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G
Surface Mount – 800V
Dynamic Characteristics
Characteristic
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of On−State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Symbol
Min
Typ
Max
Unit
(dI/dt)c
7.5
−
−
A/ms
dI/dt
−
−
50
A/µs
dV/dt
1500
−
−
V/µs
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
+C urrent
V TM
on stat e
I RR M at V RR M
Holding Current
IH
Quadrant Definitions for a Triac
Quadrant 3
Main Terminal 2
MT2 POSITIVE
(Positive Half Cycle)
+
+V oltage
I DR M at V DR M
V TM
MT 1
MT 1
RE F
RE F
( ) MT 2
( ) MT 2
I GT
Q u a dr a n t III
off stat e
Q ua dr a nt I
(+) I GT
GA TE
( ) I GT
GA TE
IH
(+) MT 2
(+) MT 2
Q u a dr a n t II
Quadrant 1
Main Terminal 2 +
+I GT
Q u a dr a n t IV
(+) I GT
GA TE
( ) I GT
GA TE
MT 1
MT 1
RE F
RE F
MT2 NEGA TIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used
3
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/19/21
Thyristors Datasheet
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G
Surface Mount – 800V
Figure 2. On-State Power Dissipation
Figure 3. On−State Characteristics
Figure 4. Thermal Response
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 1. Typical RMS Current Derating
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
4
Figure 5. Typical Hold Current Variation
4
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/19/21
Thyristors Datasheet
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G
Surface Mount – 800V
Figure 6. Typical Gate Trigger Current Variation
Figure 7. Typical Gate Trigger Voltage Variation
Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
LL
200VRMS
ADJUST FOR
ITM, 60 Hz VAC
MEASURE
I
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
CHARGE
1N4007
CL
+
200V
MT2
1N914 51
G
MT1
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information
5
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/19/21
Thyristors Datasheet
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G
Surface Mount – 800V
Dimensions
Part Marking System
4
SEATING
PLANE
B
F
4
Q
12
C
T
S
A
U
3
1
H
2
3
BTB16-xBWG
YMAXX
TO 220AB
CASE 221A
STYLE 12
K
Z
x =6 or 8
Y =Year
M =Month
A =Assembly Site
XX =Lot Serial Code
G =Pb-Free Package
R
L
V
J
G
D
N
Dim
Inches
Millimeters
Pin Assignment
Min
Max
Min
Max
1
Main Terminal 1
A
0.590
0.620
14.99
15.75
2
Main Terminal 2
B
0.380
0.420
9.65
10.67
3
Gate
C
0.178
0.188
4.52
4.78
4
No Connection
D
0.025
0.035
0.64
0.89
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.41
2.67
H
0.110
0.130
2.79
3.30
J
0.018
0.024
0.46
0.61
K
0.540
0.575
13.72
14.61
L
0.060
0.075
1.52
1.91
N
0.195
0.205
4.95
5.21
Q
0.105
0.115
2.67
2.92
2.41
R
0.085
0.095
2.16
S
0.045
0.060
1.14
1.52
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
-
1.15
-
Z
-
0.080
-
2.04
Ordering Information
Device
Package
Shipping
BTB16−600BW3G
TO−220AB
(Pb−Free)
1000 Units / Box
BTB16−700BW3G
TO−220AB
(Pb−Free)
1000 Units / Box
BTB16−800BW3G
TO−220AB
(Pb−Free)
1000 Units / Box
1. Dimensioning and tolerancing per ansi y14.5m, 1982.
2. Controlling dimension: inch.
3. Dimension z defines a zone where all body and lead irregularities are allowed.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
6
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/19/21
