CLA100E1200TZ-TUB

CLA100E1200TZ High Efficiency Thyristor VRRM = 1200 V I TAV = 100 A VT = 1,34 V Single Thyristor Part number CLA100E1200TZ Marking on Product: CLA100E1200TZ Backside: anode 4 1 3 Features / Advantages: Applications: Package: TO-268AA (D3Pak-HV) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210601c CLA100E1200TZ Ratings Thyristor Conditions Definition min. typ. max. Unit 1300 V Symbol VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VR/D = 1200 V TVJ = 25°C 10 µA VR/D = 1200 V TVJ = 125 °C 5 mA I T = 100 A TVJ = 25°C 1,37 V 1,78 V 1,34 V VT forward voltage drop I T = 200 A TVJ = 125 °C I T = 100 A I T = 200 A I TAV average forward current TC = 105 °C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing V 1,85 V T VJ = 150 °C 100 A 160 A TVJ = 150 °C 0,82 V 5,2 mΩ 0,2 K/W 0,15 K/W TC = 25°C 625 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1,10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1,19 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1,01 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 6,05 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 5,89 kA²s TVJ = 150 °C 4,37 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 4,25 kA²s 43 t P = 300 µs pF 10 W 1 W 0,5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 300 A t P = 200 µs; di G /dt = 0,45 A/µs; (dv/dt) cr critical rate of rise of voltage VD = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1,5 TVJ = -40 °C 1,6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 40 mA TVJ = -40 °C 80 mA TVJ = 150°C 0,2 V 5 mA TVJ = 25 °C 150 mA I G = 0,45 A; VD = ⅔ VDRM 150 A/µs non-repet., I T = 100 A 500 A/µs TVJ = 150°C 1000 V/µs R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM tp = 10 µs V IG = 0,45 A; di G /dt = 0,45 A/µs IH holding current VD = 6 V RGK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0,5 A; di G /dt = 0,5 A/µs VR = 100 V; I T = 100 A; VD = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20210601c CLA100E1200TZ Package Ratings TO-268AA (D3Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 min. typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 4 Weight FC 20 mounting force with clip d Spp/App Product Marking C L A 100 E 1200 TZ Part No. Date Code N 9,4 mm terminal to backside 5,6 mm Part description IXYS Logo 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g yywwS = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-268AA (D3Pak) (2HV) Assembly Line 123456 Assembly Code Ordering Standard Ordering Number Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA100E1200TZ * on die level Delivery Mode Code No. T VJ = 150°C Thyristor V 0 max threshold voltage 0,82 V R0 max slope resistance * 2,7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity Data according to IEC 60747and per semiconductor unless otherwise specified 20210601c CLA100E1200TZ Outlines TO-268AA (D3Pak-HV) A L2 E E1 C2 Dim. D1 D H D2 D3 L4 e A1 C e b 0.51 [13.0] 0.20 [5.0] 0.83 [21.0] 0.67 [17.0] L3 0.12 [3.0] 0°- 8° A2 L 0.22 [5.5] A A1 A2 b C C2 D D1 D2 D3 E E1 e H L L2 L3 L4 Millimeter min max 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 0.40 0.65 1.45 1.60 13.80 14.00 11.80 12.10 7.50 7.80 2.90 3.20 15.85 16.05 13.30 13.60 5.450 BSC 18.70 19.10 1.70 2.00 1.00 1.15 0.250 BSC 3.80 4.10 Inches min max 0.193 0.201 0.106 0.114 0.001 0.010 0.045 0.057 0.016 0.026 0.057 0.063 0.543 0.551 0.465 0.476 0.295 0.307 0.114 0.126 0.624 0.632 0.524 0.535 0.215 BSC 0.736 0.752 0.067 0.079 0.039 0.045 0.010 BSC 0.150 0.161 0.10 [2.5] RECOMMENDED MINIMUM FOOT PRINT 4 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210601c CLA100E1200TZ Thyristor 150 1000 10000 VR = 0 V 50 Hz, 80% VRRM 900 800 100 TVJ = 45°C ITSM IT 2 It TVJ = 45°C 700 [A] [A] 50 2 [A s] 600 125°C 150°C TVJ = 125°C TVJ = 125°C 500 TVJ = 25°C 0 0.5 400 1.0 1000 1.5 0.01 0.1 VT [V] 2 1 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 120 1000 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 1 t [s] Fig. 1 Forward characteristics 10 1 dc = 1 0.5 0.4 0.33 0.17 0.08 100 80 100 3 typ. tgd IT(AV)M Limit 60 1 6 [V] 4 [µs] 5 [A] 40 10 TVJ = 125°C 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0.1 1 10 100 1000 1 10 10000 0 100 1000 0 25 IG [mA] IG [mA] Fig. 4 Gate trigger characteristics 50 75 100 125 150 175 TC [°C] Fig. 5 Gate controlled delay time Fig. 6 Max. forward current at case temperature 0.24 dc = 1 0.5 0.4 0.33 0.17 0.08 200 160 P(AV) 120 0.20 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 [W] 0.16 ZthJC 0.12 [K/W] 80 i Rthi (K/W) 1 0.032 2 0.018 3 0.021 4 0.034 5 0.095 0.08 40 0.04 0 ti (s) 0.0110 0.0001 0.0200 0.3500 0.1400 0.00 0 25 50 75 100 125 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2021 IXYS all rights reserved 10 100 1000 10000 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 1 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20210601c