CLA40MT1200NPB

CLA40MT1200NPB High Efficiency Thyristor VRRM = 1200 V I TAV = 20 A VT = 1.37 V Three Quadrants operation: QI - QIII 1~ Triac Part number CLA40MT1200NPB Backside: anode/cathode Three Quadrants Operation T2 Positive Half Cycle + (-) IGT T2 (+) IGT T1 REF IGT - 4 T2 T1 QII QI QIII QIV REF + IGT (-) IGT 3 1 T1 REF Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-220 ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA40MT1200NPB Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C I R/D reverse current, drain current VT forward voltage drop 10 µA 1.5 mA TVJ = 25°C 1.37 V 1.71 V 1.37 V IT = 20 A IT = 40 A IT = 20 A IT = 40 A I RMS 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only total power dissipation I TSM max. forward surge current value for fusing V TVJ = 25°C RMS forward current per phase thermal resistance case to heatsink 1200 TVJ = 125°C TC = 115 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.83 V T VJ = 150 °C 20 A 44 A TVJ = 150 °C 0.89 V 24 mΩ 0.8 K/W K/W 0.50 TC = 25°C 155 W t = 10 ms; (50 Hz), sine TVJ = 45°C 200 A t = 8,3 ms; (60 Hz), sine VR = 0 V 215 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 170 A t = 8,3 ms; (60 Hz), sine VR = 0 V 185 A t = 10 ms; (50 Hz), sine TVJ = 45°C 200 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 190 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 145 A²s 140 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 12 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.3 A/µs; 60 A IG = 20 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.3 A; V = ⅔ VDRM non-repet., I T = pF 5 W 1 W 0.2 W 150 A/µs 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C ± 40 mA TVJ = -40 °C ± 60 mA TVJ = 150°C 0.2 V ±1 mA TVJ = 25 °C 70 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 50 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = 0.3 A/µs VR = 100 V; I T = 20 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA40MT1200NPB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 150 °C -40 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number 0.4 0.6 Nm 20 60 N Part description C L A 40 MT 1200 N PB XXXXXX Logo Assembly Line Lot # g = = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII TO-220AB (3) Zyyww abcdef Date Code Ordering Standard Ordering Number CLA40MT1200NPB Similar Part CLA40MT1200NPZ Equivalent Circuits for Simulation I V0 R0 Package TO-263AB (D2Pak) (2HV) * on die level Delivery Mode Tube Quantity 50 Code No. 517038 Voltage class 1200 T VJ = 150 °C Thyristor V 0 max threshold voltage 0.89 R0 max slope resistance * 21 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Marking on Product CLA40MT1200NPB V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA40MT1200NPB Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b 2x e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. C A2 4 3 1 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CLA40MT1200NPB Thyristor 40 160 TVJ = 125°C 30 IT 1000 50 Hz, 80% VRRM TVJ = 150°C VR = 0 V 140 120 2 It TVJ = 45°C ITSM 20 2 100 [A] TVJ = 45°C 100 [A s] TVJ = 125°C [A] 10 80 TVJ = 125°C TVJ = 25°C 0 0,5 60 1,0 1,5 2,0 10 2,5 0,01 0,1 VT [V] Fig. 1 Forward characteristics 4 1 IGD: TVJ = -40°C IGD: TVJ = 25°C 2 [V] IGD: TVJ = 0°C B B 2 3 4 5 6 7 8 910 t [s] t [ms] Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 2 40 dc = 1 0.5 0.4 0.33 0.17 0.08 C B VG 1 1000 IGD: TVJ = 125°C 3 1 30 100 typ. tgd IT(AV)M Limit 20 [µs] [A] 10 TVJ = 125°C 10 IGD: TVJ = 25°C A 1 10 0 0 25 50 75 0 100 1000 0 25 IG [mA] IG [mA] 75 100 125 150 175 TC [°C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 50 Fig. 6 Max. forward current at case temperature 1,0 dc = 40 1 0.5 0.4 0.33 30 0.17 0.08 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 0,8 ZthJC 0,6 P(AV) [K/W] 20 Rthi [K/W] 0,4 [W] 10 0,2 0 0 10 20 IT(AV) [A] 0 50 100 0,0 100 150 Tamb [°C] © 2015 IXYS all rights reserved 102 0.0100 0.0011 0.20 0.21 0.21 0.0250 0.3200 0.0900 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 101 ti [s] 0.10 0.08 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b