DSEP6-06AS-TRL

DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 (DPak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b DSEP6-06AS Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V 600 V VR = 600 V TVJ = 25°C 50 µA VR = 600 V TVJ = 150°C 0.2 mA IF = 6A TVJ = 25°C 2.03 V IF = 12 A 2.22 V IF = 6A 1.34 V IF = 12 A TVJ = 150 °C TC = 150 °C rectangular 1.55 V T VJ = 175 °C 6 A TVJ = 175 °C 1.00 V 34 mΩ d = 0.5 for power loss calculation only 2.8 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 5 pF TVJ = 25 °C 3 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.50 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 6 A; VR = 300 V -di F /dt = 200 A/µs 55 40 W A TVJ = 100 °C 5 A TVJ = 25 °C 20 ns TVJ = 100 °C 80 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b DSEP6-06AS Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 20 Unit A -55 175 °C -55 150 °C 150 °C 0.3 Weight FC typ. 20 mounting force with clip g 60 N Product Marking Logo Part number Assembly Line IXYS abcdefg Z YY WW Date Code Ordering Standard Alternative Ordering Number DSEP6-06AS-TRL DSEP6-06AS-TUB Similar Part DSEP6-06BS Equivalent Circuits for Simulation I V0 R0 Marking on Product 6P060AS 6P060AS Package TO-252AA (DPak) * on die level Delivery Mode Tape & Reel Tube Code No. 509806 524993 Voltage class 600 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1 V R0 max slope resistance * 30 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 2500 70 Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b DSEP6-06AS Outlines TO-252 (DPak) 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b DSEP6-06AS Fast Diode 10 1000 8 IF 30 TVJ = 100°C TVJ = 100°C VR = 300V VR = 300V 800 20 TVJ =150°C 6 Qr 600 TVJ =100°C IF = 12A IF = 6A IF = 3A TVJ = 25°C [A] 4 [nC] 400 2 IRM IF = 12 A IF = 6 A IF = 3 A [A] 10 200 0 0.0 0.5 1.0 1.5 0 100 2.0 0 1000 VF [V] Fig. 1 Forward current IF versus VF 2.0 0 200 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 20 TVJ = 100°C 1.2 TVJ = 100°C IF = 6A IF = 12 A IF = 6 A IF = 3 A trr 90 Kf 15 0.9 10 0.6 VFR tfr [V] [ns] 80 IRM 1000 Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt VR = 300 V 0.8 800 -diF /dt [A/μs] 100 1.2 600 -diF /dt [A/μs] 110 1.6 400 [μs] 5 0.4 0.3 70 VFR tfr Qr 0.0 60 0 40 80 120 160 0 0 TVJ [°C] 200 400 600 800 1000 -diF /dt [A/μs] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 0 200 400 600 800 0.0 1000 -diF /dt [A/μs] Fig. 5 Recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 10 1 ZthJC 0.1 [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b