DST8100S-A

Schottky Barrier Rectifier DST8100S-A, 10A, 8A, 100V, DST1040S-A, 45V, TO-277B, Single DST8100S-A RoHS e3 Description Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of automotive applications by providing high temperature, low leakage and lower VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes. Features • H  i reliability application and automotive grade AEC-Q101 qualified Pin out • T  rench MOS Schottky technology • S  ingle die in TO-277B Package • U  ltra low forward voltage drop K Cathode Anode 1 • P  b-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(Sn) (IPC/ JEDEC J-STD609A.01) • H  igh frequency operation • M  SL: Level 1 - unlimited Anode • H  igh junction temperature capability 2 Applications • S  witching mode power supply • Free-Wheeling diodes • Polarity Protection Diodes • DC/DC converters Maximum Ratings Parameters Symbol Test Conditions Max Unit Peak Inverse Voltage VRWM - 100 V Average Forward Current IF(AV) 50% duty cycle @TL = 125 °C rectangular wave form 8 A Peak One Cycle Non-Repetitive Surge Current IFSM 8.3 ms, half Sine pulse 150 A Electrical Characteristics Parameters Symbol VF1 Forward Voltage Drop* VF2 Reverse Current* IR1 Test Conditions Typ Max Unit @4A, Pulse, TJ = 25 °C 0.52 - @8A, Pulse, TJ = 25 °C 0.66 0.68 @4A, Pulse, TJ = 125 °C 0.47 - @8A, Pulse, TJ = 125 °C 0.58 0.62 @VR = rated VR, TJ = 25 °C 13.5 70 μA mA V IR2 @VR = rated VR, TJ = 125 °C 3.5 15 Junction Capacitance CT @VR = 5V, TC = 25 °C, fSIG = 1MHz 542 - pF Voltage Rate of Change dv/dt - 10000 V/μs * Pulse Width < 300μs, Duty Cycle