Thyristors
Standard Unidirectional SIDACs
Kxxx0yU SIDAC Series
RoHS
Description
The SIDAC is a silicon unilateral voltage triggered switch.
Upon application of a voltage exceeding the SIDAC breakover
voltage point, the SIDAC switches on through a negative
resistance region to a low on-state voltage. Conduction
continues until the current is interrupted or drops below the
minimum holding current of the component.
SIDACs feature glass-passivated junctions to ensure a
rugged and dependable component capable of withstanding
harsh environments.
Features
• R
ectified AC/DC Circuit
Oriented
• R
oHS Compliant
• T
riggering Voltage of 75V
to 260V
Schematic Symbol
Applications
A
K
Suitable for capacitor-discharge HV generator circuit
Electrical Specifications (TJ = 25°C, unless otherwise specified)
Symbol
VBO
VDRM
Parameters
Breakover/Trigger Voltage
Repetitive Peak Off-state Voltage
Test Conditions
min
max
K0820yURP
75
90
K0900yURP
79
97
K1050yURP
95
110
K1100yURP
104
118
K1200yURP
110
125
K1300yURP
120
138
K1400yURP
130
146
K1500yURP
142
157
183
K1800yURP
167
K2000yURP
190
210
K2200yURP
210
230
K2300yURP
220
240
K2400yURP
230
250
K2500yURP
240
260
K0820yURP
70
K0900yURP
70
K1050yURP
90
K1100yURP
90
K1200yURP
100
K1300yURP
110
K1400yURP
115
K1500yURP
120
K1800yURP
150
K2000yURP
170
K2200yURP
190
K2300yURP
200
K2400yURP
210
K2500yURP
220
1
Unit
V
V
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/29/19
Thyristors
Standard Unidirectional SIDACs
Electrical Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Max
Unit
IT(RMS)
On-state RMS Current
50/60Hz
1
A
IDRM
Repetitive Peak Off-state Current
V = VDRM
50/60Hz Sine Wave
5
μA
VTM
Peak On-state Voltage
IT = 1A
1.2
V
IH
Dynamic Holding Current
RL = 100Ω
50/60Hz Sine Wave
10
80
mA
RS
(VBO – VS)
Switching Resistance, RS= ________
(IS – IBO)
50/60Hz Sine Wave
100
IBO
Breakover Current
ITSM
Peak Non-repetitive Surge Current
(refer to figure 4)
Ω
50/60Hz Sine Wave
Peak Repetitive Pulse Current (refer to figure 5 and
figure 6)
ITRM
Min
10
K0820yU~
K0900yU
TP=10μs
TA=125C
60Hz
80
5Hz
160
K1050yU~
K2000yU
TP=10μs
TA=125C
60Hz
120
5Hz
280
K2200yU~
K2500yU
TP=10μs
TA=135C
60Hz
120
5Hz
280
Single Cycle
60Hz
20
50Hz
16.7
di/dt
Critical Rate of Rise of On-state Current
dv/dt
Critical Rate of Rise of Off-state Voltage
1500
TS
Storage Temperature Range
-40
150
K0820yU~K2000yU
-40
125
K2200yU~K2500yU
-40
150
TJ
Junction Temperature Range
RƟJL
Thermal Resistance, Junction to Lead
A
A/μs
V/μs
DO-214
30
DO-15
18
°C
°C
°C/W
Figure 2: O
n-state Current vs. On-state
Voltage (Typical)
+I
Instantaneous On-state Current (iT) – Amps
9
VDRM
VT
-V
IBO
IDRM
+V
IS
RS =
A
150
Figure 1: V-I Characteristics
VBO VS
μA
(VBO - VS)
IH
(IS - IBO)
IT
8
7
6
5
4
3
2
1
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous On-state Voltage (vT) – Volts
-I
2
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/29/19
Thyristors
Standard Unidirectional SIDACs
Figure 3: Power Dissipation vs. On-state Current
(Typical)
Figure 4: P
eak Non-repetitive Surge Current (ITSM)
vs. Number of Cycles
Average On-state Power Dissipation
[PD(AV)] - Watts
100
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum Rated
Value at Specified Junction Temperature
Peak Surge (Non-repetitive)
On-state Current (I TSM ) – Amps
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10
1.0
1
RMS On-state Current [ITRM] - Amps
Repetitive Peak On-State Current (ITRM) - Amps
Repetitive Peak On-State Current (ITRM) - Amps
ITM
tO
1/f
120 Hz
5 Hz
60 Hz
1 kHz
5 kHz
10
1
1.0
10.0
100.0
10
100
1000
Figure 6: R
epetitive Peak On-state Current (ITRM)
vs. Pulse Width at Various Frequencies of
K1050yU~K2500yU
di/dt Limit Line
100
1
Surge Current Duration -- Full Cycles
Figure 5: Repetitive Peak On-state Current(ITRM)
vs. Pulse Width at Various Frequencies of
K0820yU/K0900yU
1000
Notes:
1) Blocking capability may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned
to steady-state rated value.
1000
di/dt Limit Line
ITM
tO
100
1/f
5 Hz
120 Hz
60 Hz
1 kHz
5 kHz
10
1
1000.0
1.0
10.0
Pulse Base Width (tO) - us
100.0
1000.0
Pulse Base Width (tO) - us
Figure 8: Normalized DC Holding Current
vs. Junction Temperature
Figure 7: Normalized VBO Change vs. Junction
Temperature
2.0
10%
K2200yU~K2500yU
6%
Ratio of IH / IH (TJ = 25°C)
VBO Change -- %
8%
K0xx0yU
4%
2%
K1xx0yU
0%
-2%
-4%
K2000yU
1.5
1.0
0.5
-6%
-8%
-40.0
0.0
40.0
80.0
120.0
160.0
0.0
Junction Temperature (TJ) -- °C
-40
-15
10
35
60
85
110
125
Junction Temperature (TJ) -- °C
3
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/29/19
Thyristors
Standard Unidirectional SIDACs
Figure 10: Maximum Allowable Ambient Temperature
vs. RMS On-State Current
160
160
K2200GU~
K2500GU
150
140
130
K2200S1U~
K2500S1U
120
Maximum Allowable Ambient
Temperature (TA) - °C
Maximum Allowable Lead/Case Temperature
(TC)- °C
Figure 9: Maximum Allowable Case Temperature
vs. RMS On-State Current
K0820GU~
K2000GU
110
K0820S1U~
K2000S1U
100
90
80
0
0.2
0.4
0.6
1
0.8
K2200GU~
K2500GU
140
CURRENT WAVEFORM : Sinus oidal - 60Hz
LOAD: Re s is tive or Inductive
FREE AIR RATING
120
K2200S1U~
K2500S1U
100
80
K0820GU~
K2000GU
60
K0820S1U~
K2000S1U
40
20
1.2
0
0.2
0.4
RMS On-State Current [IT(RMS)] - Amps
0.6
0.8
1
RMS On-State Current [IT(RMS)] - Amps
Figure 11: Normalized Repetitive Peak Breakover
Current (IBO) vs. Junction Temperature
Figure 12: D
ynamic Holding Current Test Circuit for
SIDACs
Push to test
Repetitive Peak Breakover
Current (IBO) Multiplier
10
100-250 V ac
60 Hz
100 Ω
1%
Device
Under
Test
Scope
IPK
Trace Stops
IH
1
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Scope Indication
Junction Temperature (TJ) -- °C
Figure 13: B
asic SIDAC Circuit
Figure 14: R
elaxation Oscillator Using a SIDAC
(a) Circuit
V
BO
SIDAC
VDC(IN) ≥ VB0
100-250 Vac
60 Hz
IH
(b) Waveforms
R
VBO
VBO
IL
C
Load
IH
˚
120-145
Conduction
Angle
4
VC
VC
R max ≤
VIN - VBO
I
BO
R min≥
VIN - VTM
IH (MIN)
t
RL
IL
t
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/29/19
Thyristors
Standard Unidirectional SIDACs
Figure 16: C
omparison of SIDAC versus SCR for Gas
Ignitor Circuit
Figure 15: L
ow-voltage Input Circuit for Gas Ignition
4.7 µF
- +
100 V
10 µF
-
50 V
SCR
4.7 k
+
yU
K1200E
Sidac
½W
+
-
4.7 µF
100 V
Sidac
1.2 µF
100-250 V ac
60 Hz
200 V
100-250 V ac
60 Hz
24 V ac
60 Hz
H.V.
Ignitor
Figure 17: SIDAC Circuit for High-power Igniter
Figure 18: S
IDAC Circuit for Gas Ignition
9
K2200yU
X)Y
6
$
6
1kΩ
0.47 µF
K1500yU
.
N˖
2.2 µF
AC 240V
60 Hz
˖
2.2MΩ
X)
)5
0˖
Q)
1kΩ
0˖
Soldering Parameters
Pre Heat
Pb - Free assembly
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60-180 secs
Average ramp up rate (Liquidus Temp) (TL) to
peak
5°C/second max
TS(max) to TL - Ramp-up Rate
5°C/second max
Reflow
- Temperature (TL) (Liquidus)
217°C
- Time (tL)
60-150 seconds
Peak Temperature (TP)
260+0/-5 °C
Time within 5°C of actual peak Temperature(tp)
20-40 seconds
Ramp-down Rate
5°C/second max
Time 25°C to peak Temperature(Tp)
8 minutes max
Do not exceed
280°C
tP
TP
Temperature
Reflow condition
tL
TS(max)
Preheat
TS(min)
25
5
Ramp-up
TL
Ramp-do
Ramp-down
tS
time to peak temperature
Time
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/29/19
Thyristors
Standard Unidirectional SIDACs
Flow Soldering (Solder Dipping)
Pre Heat
- Temperature Min
140°C
- Temperature Max
160°C
Time to Pre-Heat Temp
60-150 seconds
Average ramp up rate to Pre-Heat Temp
tP
Pb - Free assembly
Temperature
Wave soldering condition
5°C/second max
Peak Temperature
260+0/-5 °C
Average ramp up rate (Tpre-heat to Tp)
5°C/second max
Time within actual peak Temperature Max
6 seconds
Ramp-down Rate
5°C/second max
TP
Ramp-up
TS
time to peak temperature
Physical Specifications
100% Matte Tin Plated
Body Material
Lead Material
Time (t)
Reliability/Environmental Tests
Test
Terminal Finish
Ramp Down
Pre-heat
Specifications and Conditions
High Temperature
Voltage Blocking
MIL-STD-750: Method 1040, Condition A Rated
VDRM (Rectified VAC-peak), TJ, 504 hours
UL Recognized compound meeting flammability
rating V-0
Temperature Cycling
MIL-STD-750: Method 1051
-40°C to 150°C, 15-minute dwell, 100 cycles
Copper Alloy
Biased Temperature &
Humidity
EIA/JEDEC: JESD22-A101
80% min VBO (VDC), 85°C, 85%RH, 1008 hours
High Temp Storage
MIL-STD-750: Method 1031
150°C, 1008 hours
Low-Temp Storage
-40°C, 1008 hours
Thermal Shock
MIL-STD-750: Method 1056
0°C to 100°C, 5-minute dwell,
10-second transfer, 10 cycles
Resistance to
Solder Heat
MIL-STD-750: Method 2031
260°C, 10 seconds
Solderability
ANSI/J-STD-002: Category 3
Lead Bend
MIL-STD-750: Method 2036, Condition E
Design Considerations
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Overheating and surge currents are the main
killers of SIDACs. Correct mounting, soldering, and
forming of the leads also help protect against component
damage.
6
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/29/19
Thyristors
Standard Unidirectional SIDACs
Dimensions
DO-214AC (SMA)
Dimensions
C
A
B
G
Max
Min
Max
0.049
0.065
1.250
1.650
B
0.157
0.177
3.990
4.500
C
0.100
0.110
2.540
2.790
0.078
0.090
1.980
2.290
0.030
0.060
0.780
1.520
F
-
0.008
-
0.203
G
0.194
0.208
4.930
5.280
H
0.006
0.012
0.152
0.305
I
0.070
-
1.800
-
L
K
J
Min
A
E
D
E
Millimeters
D
H
F
Inches
I
J
0.082
-
2.100
-
K
-
0.090
-
2.300
L
0.082
-
2.100
-
Solder Pads
(all dimensions in mm)
Dimensions — DO-15
Temperature Measuring Point
Dimension
D
C
A
B
A
Inches
Millimeters
Max
Max
Min
Max
A
1.000
-
25.40
-
B
0.230
0.300
5.80
7.60
C
0.028
0.034
0.71
0.86
D
0.104
0.140
2.60
3.60
Product Selector
Part Number
Switching Voltage Range
Blocking Voltage
Packages
VBO Minimum
VBO Maximum
VDRM
DO-15
DO-214
K0820yURP
75
90
70
K0820GURP
K0820S1URP
K0900yURP
79
97
70
K0900GURP
K0900S1URP
K1050yURP
95
110
90
K1050GURP
K1050S1URP
K1100yURP
104
118
90
K1100GURP
K1100S1URP
K1200yURP
110
125
100
K1200GURP
K1200S1URP
K1300yURP
120
138
110
K1300GURP
K1300S1URP
K1400yURP
130
146
115
K1400GURP
K1400S1URP
K1500yURP
142
157
120
K1500GURP
K1500S1URP
K1800yURP
167
183
150
K1800GURP
K1800S1URP
K2000yURP
190
210
170
K2000GURP
K2000S1URP
K2200yURP
210
230
190
K2200GURP
K2200S1URP
K2300yURP
220
240
200
K2300GURP
K2300S1URP
K2400yURP
230
250
210
K2400GURP
K2400S1URP
K2500yURP
240
260
220
K2500GURP
K2500S1URP
7
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/29/19
Thyristors
Standard Unidirectional SIDACs
Packing Options
Part Number
Marking
Weight
Package Mode
Packages
Base Quantity
Kxxx0S1URP
Kxxx
0.062g
Reel Pack
DO-214AC
5000
Kxxx0GURP
Kxxx
0.38g
Reel Pack
DO-15
5000
Part Marking System
Part Numbering System
K xxx 0 S1 U RP
K
PACKAGING OPTION
RP: Tape and Reel
DEVICE TYPE
K: Sidac
DO-214AC
K105
UNIDIRECTIONAL
MEDIAN VOLTAGE
082:
090:
105:
110:
120:
130:
140:
150:
180:
200:
220:
230:
240:
250:
DO-15
K
75V~ 90V
79V~ 97V
95V~110V
104V~118V
110V~125V
120V~138V
130V~146V
142V~157V
167V~183V
190V~210V
210V~230V
220V~240V
230V~250V
240V~260V
®
PACKAGE TYPE
S1: DO-214AC package
G: DO-15 package
YMXXX
A
CONSTRUCTION
VARIABLE
0: Single chip SIDAC
K
K105
A
YMXXX
Date Code Marking
Y:Year Code
M: Month Code
XXX: Lot Trace Code
A
Tape and Reel Specification — DO-214AC
0.157
(4.0)
Cathode
0.47
(12.0)
0.157
(4.0)
0.059 DIA
(1.5)
Cover tape
13.0 (330)
0.80 (20.2)
Arbor Hole Dia.
0.49
(12.5)
Dimensions are in inches
(and millimeters).
Direction of Feed
8
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/29/19
Thyristors
Standard Unidirectional SIDACs
DO-15 Reel Pack (RP) Specifications
Meets all EIA RS-296 Standards
DO-15
10.0 - 14.0
(254.0 - 356.0)
2.063
(52.4)
3.15 (80.0) TYP
0.898
(22.8)
Dimensions
are in inches
(and millimeters).
0.252
(6.4)
Direction of Feed
0.197
(5.0)
9
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/29/19
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