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LFUSCD10065A

LFUSCD10065A

  • 厂商:

    HAMLIN(力特)

  • 封装:

    TO220-2

  • 描述:

    DIODESICSCHOTKY650V10ATO220

  • 数据手册
  • 价格&库存
LFUSCD10065A 数据手册
SiC Schottky Diode LFUSCD10065A, 650 V, 10 A, TO-220 2-lead LFUSCD10065A RoHS Pb Description The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • E  xtremely fast, temperature-independent switching behavior • P  ositive temperature coefficient for safe operation and ease of paralleling • D  ramatically reduced switching losses compared to Si bipolar diodes • 1  75 °C maximum operating junction temperature • Enhanced surge capability Circuit Diagram Applications 1 Case 1 • B  oost diodes in power factor correction • U  ninterruptible power supplies • S  witch-mode power supplies • Solar inverters • Industrial motor drives 2 1 2 Maximum Ratings Characteristics DC Blocking Voltage Symbol Conditions Max. Unit VR - 650 V Repetitive Peak Reverse Voltage, Tj = 25 °C VRRM 650 V Surge Peak Reverse Voltage VRSM 650 V TC = 147 °C 10 A Maximum DC Forward Current IF Non-Repetitive Forward Surge Current IFSM TC = 25 °C, 8.3 ms, half sine pulse 75 A Non-Repetitive Peak Forward Current IF,MAX TC = 25 °C, 10 µS 455 A Non-Repetitive Avalanche Energy EAS Tj = 25 °C, L = 5 mH, Ipk = 5.5A, VDD = 100 V 84 mJ Power Dissipation PTot TC = 25 °C 125 TC = 147 °C 23 Maximum Operating Junction Temperature Storage Temperature © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 W TJ,MAX 175 °C TSTG -55 to 175 °C SiC Schottky Diode LFUSCD10065A, 650 V, 10 A, TO-220 2-lead Electrical Characteristics Characteristics Symbol Forward Voltage Value Conditions VF Min. Typ. Max. IF = 10 A, TJ = 25 °C - 1.5 1.7 IF = 10 A, TJ = 150 °C - 1.8 2.1 IF = 10 A, TJ = 175 °C - 1.95 2.25 VR = 650 V , TJ = 25 °C - 25 250 VR = 650 V , TJ = 175 °C - 50 800 QC VR = 400 V, IF = 10 A, di/dt = 250 A/µs - 16 - VR = 1 V, f =1 MHz - 290 - C VR = 300 V, f = 1 MHz - 31 - VR = 600 V, f = 1 MHz - 28 - Reverse Current IR Total Capacitive Charge Total Capacitance Unit V μA nC pF Footnote: TJ = +25 °C unless otherwise specified Thermal Characteristics Characteristics Thermal Resistance Symbol Conditions RθJC - Figure 1: Typical Reverse Characteristics Value Min. Typ. Max. - - 1.2 Unit °C/W Figure 2: Typical Foward Characteristics 1.E-04 10-4 20 - 55 °C 25 °C 175 °C 10-6 1.E-06 10-7 1.E-07 10-8 1.E-08 Forward Current, IF (A) Reverse Current, IR (A) 1.E-05 10-5 15 10 - 55 °C 25 °C 100 °C 5 150 °C 175 °C 10-9 1.E-09 200 250 300 350 400 450 500 550 600 650 Reverse Voltage, VR (V) 0 0 1 2 3 Forward Voltage, VF (V) 4 © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 SiC Schottky Diode LFUSCD10065A, 650 V, 10 A, TO-220 2-lead Figure 3: Power Disipation Figure 4: D  iode Foward Current 140 120 100 80 60 40 80 60 40 20 20 0 D = 0.1 D = 0.3 D = 0.5 D = 0.7 D = 1.0 100 Forward Current,IF (A) Power Disspiation, PTot (W) 120 25 50 75 100 TC (±C) 125 150 0 175 Figure 5: Capacitance vs. Reverse Voltage 25 50 75 100 TC (±C) 125 150 175 Figure 6: Maximum Transient Thermal Impedance 400 Max. Thermal Impedance, ZθJC (±C/W) Capacitance, C (pF) 350 300 250 200 150 100 50 0 0.1 1 10 100 Reverse Voltage, VR (V) © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 1000 1 0.1 D = 0.5 D = 0.3 D = 0.1 0.01 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Time , t (s) SiC Schottky Diode LFUSCD10065A, 650 V, 10 A, TO-220 2-lead Part Marking System LFUSCD 10065A PYWXX ZZZ LFU SCD 10 065 A PYWXX ZZZ Packing Options = Littelfuse = SiC diode = Current Rating(10 A) = Voltage Rating (650 V) = TO-220-2 package = Date Code = Lot Number Part Number Marking Packing Mode M.O.Q LFUSCD10065A LFUSCD10065A 50 pcs / Tube 500 Date code notes: P = assembly code Y = year W = week XX = sequencial build number Dimensions-Package TO-220 2-lead Symbol A A1 A2 b b2 C D D1 E e1 L L1 øP Q Inches Min 0.165 0.048 0.094 0.025 0.045 0.018 0.595 0.355 0.381 0.198 0.500 0.120 0.143 0.100 Millimeters Max 0.185 0.052 0.098 0.035 0.055 0.025 0.615 0.365 0.391 0.202 0.510 0.150 0.147 0.120 Min 4.19 1.22 2.39 0.64 1.14 0.46 15.11 9.02 9.68 5.03 12.70 3.05 3.63 2.54 Max 4.70 1.32 2.49 0.89 1.40 0.64 15.62 9.27 9.93 5.13 12.95 3.81 3.73 3.05 Mounting M3/M3.5 1Nm Torque Screw 8.8 lbf-in Packing Specification ( Tube for TO-220 2-lead ) Note: All units in Millimeters. Tolerances ± 0.25mm unless otherwise specified. © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16
LFUSCD10065A 价格&库存

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