LSIC1MO120E0080

Datasheet LSIC1MO120E0080 1200 V, 80 mOhm N-Channel SiC MOSFET Product Summary Characteristic Value VDS 1200 V Typical RDS(ON) 80 mOhm 25 A ID (TC °C) Unit Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures • Ultra-low on-resistance Agency Approvals and Environmental Environmental Approvals RoHS HF Applications Circuit Diagram • High-frequency applications • Solar Inverters • Switch Mode Power Supplies • UPS • Motor Drives • High Voltage DC/DC Converters • Battery Chargers • Induction Heating 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020 Datasheet 1. Maximum Ratings...........................................................................................................................................3 2. Thermal Characteristics ..................................................................................................................................3 3. Electrical Characteristics .................................................................................................................................3 3.1. Static Characteristics (TJ = 25 °C unless otherwise specified) ................................................................3 3.2. Dynamic Characteristics (TJ = 25 °C unless otherwise specified) ...........................................................3 4. Reverse Diode Characteristics .......................................................................................................................4 5. Performance Curves .......................................................................................................................................5 6. Package Dimensions ......................................................................................................................................9 7. Part Numbering and Marking ..........................................................................................................................9 8. Packing Options ..............................................................................................................................................9 9. Packing Specifications ..................................................................................................................................10 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020 Datasheet 1. Maximum Ratings Characteristic Symbol Drain-Source Voltage Conditions Value Unit V VDS Continuous Drain Current ID Pulsed Drain Current 1 1200 39 VGS = 20 V, TC = 100 °C 25 A ID(pulse) TC = 25 °C 80 A PD TC = 25 °C, TJ = 175 °C 214 W Power Dissipation VGS,MAX Gate-Source Voltage VGS = 0 V VGS = 20 V, TC = 25 °C Absolute maximum values Steady state -6 to +22 VGS,OP,TR 2 Transient, ttransient < 300 nsec -10 to +25 VGS,OP 3 Recommended DC operating values -5 to +20 TJ - -55 to +175 TSTG - -55 to +150 °C 0.6 Nm 5.3 in-lb Operating Junction Temperature Storage Temperature Mounting Torque MD M3 or 6-32 screw V °C Footnote 1: Pulse width limited by TJ,MAX Footnote 2: See Figure 21 for further information Footnote 3: MOSFET can operate with VGS(OFF) = 0 V dependent upon PCB layout. VGS(OFF) = -5 V provides added noise margin and faster turn-off speed 2. Thermal Characteristics Symbol Value Unit Maximum Thermal Resistance, junction-to-case Characteristic Rth,JC,MAX 0.7 °C/W Maximum Thermal Resistance, junction-to-ambient Rth,JA,MAX 40 °C/W 3. Electrical Characteristics 3.1. Static Characteristics (T J Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On-State Resistance = 25 °C unless otherwise specified) Value Symbol Conditions V(BR)DSS VGS = 0 V, ID = 100 µA 1200 - - VDS = 1200, VGS = 0 V - 1 100 VDS = 1200 V, VGS = 0 V, TJ = 175 °C - 2 - IGSS,F VGS = 22 V, VDS = 0 V - - 100 IGSS,R VGS = -6 V, VDS = 0 V - - 100 ID = 20 A, VGS = 20 V - 80 100 ID = 20 A, VGS = 20 V, TJ = 175 °C - 120 - VDS = VGS, ID = 10 mA 1.8 2.8 4.0 VDS = VGS, ID = 10 mA, TJ = 175 °C - 1.8 - Resonance method, Drain-Source shorted1 - 0.6 - IDSS RDS(ON) Gate Threshold Voltage VGS(TH) Internal Gate Resistance RG.int Min Typ Max Unit V µA nA V Footnote 1: For a description of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method 3 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020 Datasheet 3.2. Dynamic Characteristics (T J Characteristic = 25 °C unless otherwise specified) Value Symbol Conditions Turn-On Switching Energy EON Turn-Off Switching Energy EOFF VDD = 800 V, ID = 20 A, VGS = -5 / +20 V, RG,ext FWD = LSIC2SD120A10 Min Typ Max - 220 - - 32 - Total Per-Cycle Switching Energy ETS - 252 - Input Capacitance CISS - 1700 - Output Capacitance COSS - 82 - - 9 - - 26 - - 92 - - 28 - - 35 - - 10 - - 10 - - 16 - - 8 - Reverse Transfer Capacitance CRSS COSS Stored Energy EOSS Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf VDD = 800 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV VDD = 800 V, ID = 20 A, VGS = -5 / +20 V VDD = 800 V, ID = 20 A, VGS = -5 / +20 V, RG,ext RL = 40 Timing relative to VDS Unit µJ pF µJ nC ns 4. Reverse Diode Characteristics Characteristic Symbol Diode Forward Voltage VSD Continuous Diode Forward Current Peak Diode Forward Current 1 IS ISP Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm Value Conditions Unit Min Typ Max IS = 10 A, VGS = 0 V - 3.6 - IS = 10 A, VGS = 0 V, TJ = 175 °C - 3.2 - - - 35 - - 85 - 21 - ns - 210 - nC - 19 - A VGS = 0 V, TC = 25 °C VGS = -5 V, IS = 20 A, VR = 800 V, dI/dt = 5.5 A/ns V A Footnote 1: Pulse width limited by TJ,MAX 4 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020 Datasheet 5. Performance Curves Figure 1. Maximum Power Dissipation (TJ = 175 °C) Figure 2. Typical Transfer Characteristics 250 80 TJ = 25 °C Drain Current, ID (A) Power Dissipation, PD (W) 70 200 150 100 60 50 40 -55 °C 175 °C 30 20 50 10 (VDS = 10 V) 0 0 -75 -25 25 75 125 175 0 5 Case Temperature, TC (°C) Figure 3. Typical Output Characteristics (TJ = 25 °C) 20 80 70 70 VGS = 20 V 60 18 V 50 16 V Drain Current, ID (A) 40 14 V 30 20 12 V 10 10 V 60 VGS = 20 V 50 18 V 16 V 40 14 V 12 V 30 10 V 20 10 0 0 0 2 4 6 8 10 0 2 Drain-Source Voltage, VDS (V) 4 6 8 10 Drain-Source Voltage, VDS (V) Figure 5. Typical Output Characteristics (TJ = -55 °C) Figure 6. Typical Reverse Conduction Characteristics (TJ = 25 °C) 80 Reverse Voltage, VSD (V) 70 7 60 VGS = 20 V 50 18 V 6 5 4 3 2 1 0 0 10 20 40 30 16 V 30 -5 V 0 V 5V 10 V 40 20 14 V 10 12 V VGS = 20 V 50 15 V 60 10 V 0 0 2 4 6 8 10 Reverse Current, IS (A) Drain Current, ID (A) 15 Figure 4. Typical Output Characteristics (TJ = 175 °C) 80 Drain Current, ID (A) 10 Gate-Source Voltage, VGS (V) 70 Drain-Source Voltage, VDS (V) 80 5 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020 Datasheet Figure 7. Typical Reverse Conduction Characteristics (TJ = 175 °C) Figure 8. Typical Reverse Conduction Characteristics (TJ = -55 °C) 5 4 3 Reverse Voltage, VSD (V) 2 1 0 5V 7 VGS = 20 V 4 3 2 1 0 10 10 30 15 V 40 10 V 5 0 20 -5 V 0 V 6 0 50 60 Reverse Current, IS (A) 6 20 30 -5 V 0 V 5V 10 V 15 V 40 VGS = 20 V 50 60 70 70 80 80 Figure 9. Normalized Transient Thermal Impedance Reverse Current, IS (A) Reverse Voltage, VSD (V) 7 Figure 10. Maximum Safe Operating Area (TC = 25 °C) 100 Duty = 0.5 0.3 1E-1 Drain Current, ID (A) Thermal Impedance, Zth,JC (Normalized to Rth,JC) 1E+0 0.1 0.05 0.02 0.01 1E-2 Pulse 10 µs 10 100 µs 1 1 ms 100 ms 0.1 Single Pulse (Single Pulse) 1E-3 1E-6 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 0.1 1 Pulse Width (s) Figure 11. On-resistance vs. Drain Current 100 1000 10000 Figure 12. Normalized On-resistance vs. Junction Temperature 1.6 Normalized On-resistance, RDS(ON) 200 On-resistance, RDS(ON) (mOhm) 10 Drain-Source Voltage, VDS (V) 180 TJ = 175 °C 160 140 -55 °C 120 100 25 °C 80 60 40 20 (VGS = 20 V) 0 10 20 1.4 1.2 1 0.8 0.6 0.4 0.2 (VGS = 20 V, ID = 20 A) 0 30 40 50 60 -75 Drain Current, ID (A) -50 -25 0 25 50 75 100 125 150 175 200 Junction Temperature, TJ (°C) 6 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020 Datasheet Figure 13. Typical On-resistance vs. Junction Temperature Figure 14. Typical Threshold Voltage 4 180 VGS = 16 V Threshold Voltage, VGS(TH) (V) On-resistance, RDS(ON) (mOhm) 200 160 140 18 V 120 100 80 20 V 60 40 20 -50 -25 3 2.5 2 1.5 1 0.5 (VGS = VDS, ID = 10 mA) (ID = 20 A) 0 3.5 0 0 25 50 75 100 125 150 175 -75 -50 Junction Temperature, TJ (°C) -25 0 25 50 75 100 125 150 175 200 Junction Temperature, TJ (°C) Figure 15. Typical Junction Capacitances up to 1000 V Figure 16. Typical Junction Capacitances up to 200 V 10000 10000 CISS 100 Capacitance (pF) Capacitance (pF) 1000 COSS 10 CISS 1000 COSS 100 CRSS (f = 1 MHz) (f = 1 MHz) 1 0 200 400 600 800 1000 0 50 Drain-Source Voltage, VDS (V) 100 150 200 Drain-Source Voltage, VDS (V) Figure 17. Typical COSS Stored Energy EOSS Figure 18. Typical Gate Charge 40 20 Gate-Source Voltage, VGS (V) 35 Stored Energy, EOSS (µJ) CRSS 10 30 25 20 15 10 5 15 10 5 0 (VDD = 800 V, ID = 20 A) 0 -5 0 200 400 600 800 1000 0 Drain-Source Voltage, VDS (V) 10 20 30 40 50 60 70 80 90 100 Gate Charge, QG (nC) 7 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020 Datasheet Figure 19. Typical Switching Energy vs. Drain Current Figure 20. Typical Switching Energy vs. External Gate Resistance 900 1000 700 600 500 400 300 200 100 Etot VDD = 800 V ID = 20 A VGS = -5/+20 V FWD = LSIC2SD120A10 TJ = 25 °C L = 714 µH 900 Switching Energy, ESW (µJ) 800 Switching Energy, ESW (µJ) Etot Eon VDD = 800 V RG,ext = 2 Ohm VGS = -5/+20 V FWD = LSIC2SD120A10 TJ = 25 °C L = 714 µH 800 700 Eon 600 500 400 300 Eoff 200 100 Eoff 0 0 0 10 20 30 40 50 0 Drain Current, ID (A) 5 10 15 20 25 30 External Gate Resistance, RG,ext (Ohm) Figure 21. VGS Waveform Definitions +25 V ttransient +22 V 0V ttransient -6 V -10 V 8 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020 Datasheet 6. Package Dimensions Millimeters Symbol Min Nom Max A 4.699 - 5.309 A1 2.210 - 2.591 A2 1.499 - 2.489 b 0.990 - 1.400 b2 1.650 - 2.390 b4 2.590 - 3.430 c 0.380 - 0.890 21.463 D 20.800 - D1 13.081 - - D2 0.508 - 1.350 e Recommended Hole Pattern Layout: Notes: 1. Dimensions are in millimeters 2. Dimension D, E do not include mold flash. Mold flash shall not exceed 0.127 mm per side measured at outer most extreme of plastic body. 3. øP to have a maximum draft angle of 1.7° to the top of the part with a maximum hole diameter of 3.912 mm. 7. Part Numbering and Marking SiC = SiC 1 = Gen 1 MO = MOSFET 120 = Voltage Rating (1200 V) E = TO-247-3L 0080 = RDS(ON) (80 mOhm) YY = Year WW = Week D = Special Code ZZZZZZ-ZZ = Lot Number 5.440 BSC E 15.494 - 16.256 E1 13.060 - 14.150 E2 3.429 - 5.486 L 19.810 - 20.570 L1 3.810 - 4.496 øP 3.550 - 3.660 øP1 7.060 - 7.390 Q 5.385 - 6.200 S 6.050 - 6.300 8. Packing Options 9 Part Number Marking LSIC1MO120E0080 SIC1MO120E0080 Packing Mode Tube (30 pcs) M.O.Q. 450 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020 Datasheet 9. Packing Specifications For additional information please visit www.Littelfuse.com/powersemi Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, lifesaving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly forth in applicable Littelfuse product documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics 10 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 6/18/2020