LSIC1MO120E0120

LSIC1MO120E0120 Silicon Carbide MOSFET Datasheet LSIC1MO120E0120 1200 V, 120 mOhm N-Channel SiC MOSFET Product Summary Characteristic Value VDS 1200 V Typical RDS(ON) 120 mOhm 18 A ID (TC °C) Unit Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures • Ultra-low on-resistance • RoHS-compliant, lead-free, and halogen-free Agency Approvals and Environmental Environmental Approvals Circuit Diagram Applications • High-frequency applications • Solar Inverters • Switch Mode Power Supplies • UPS • Motor Drives • High Voltage DC/DC Converters • Battery Chargers • Induction Heating 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 1/6/2021 LSIC1MO120E0120 Silicon Carbide MOSFET Datasheet 1. Maximum Ratings...........................................................................................................................................3 2. Thermal Characteristics ..................................................................................................................................3 3. Electrical Characteristics .................................................................................................................................3 3.1. Static Characteristics (TJ = 25 °C unless otherwise specified) ................................................................3 3.2. Dynamic Characteristics (TJ = 25 °C unless otherwise specified) ...........................................................4 4. Reverse Diode Characteristics (TJ = 25 °C unless otherwise specified) ........................................................4 5. Performance Curves .......................................................................................................................................5 6. Package Dimensions ......................................................................................................................................9 7. Part Numbering and Marking ..........................................................................................................................9 8. Packing Options ..............................................................................................................................................9 9. Packing Specifications ..................................................................................................................................10 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Revised: 1/6/2021 LSIC1MO120E0120 Silicon Carbide MOSFET Datasheet 1. Maximum Ratings Characteristic Symbol Drain-Source Voltage Conditions Value Unit V VDS Continuous Drain Current ID Pulsed Drain Current 1 1200 27 VGS = 20 V, TC = 100 °C 18 A ID(pulse) TC = 25 °C 60 A PD TC = 25 °C, TJ = 175 °C 156 W Power Dissipation VGS,MAX Gate-Source Voltage VGS = 0 V VGS = 20 V, TC = 25 °C Absolute maximum values Steady state -6 to +22 VGS,OP,TR 2 Transient, ttransient < 300 nsec -10 to +25 VGS,OP 3 Recommended DC operating values -5 to +20 Operating Junction Temperature V TJ - -55 to +175 °C Storage Temperature TSTG - -55 to +150 °C Lead Temperature for Soldering Tsold - 260 °C Mounting Torque MD M3 or 6-32 screw 1.0 Nm 8.8 in-lb Footnote 1: Pulse width limited by TJ,MAX Footnote 2: See Figure 21 for further information Footnote 3: MOSFET can operate with VGS(OFF) = 0 V. VGS(OFF) = -5 V provides added noise margin and faster turn-off speed 2. Thermal Characteristics Characteristic Symbol Value Unit Maximum Thermal Resistance, junction-to-case Rth,JC,MAX 0.96 °C/W Maximum Thermal Resistance, junction-to-ambient Rth,JA,MAX 40 °C/W 3. Electrical Characteristics 3.1. Static Characteristics (T J Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On-State Resistance Gate Threshold Voltage Gate Resistance = 25 °C unless otherwise specified) Value Symbol Conditions V(BR)DSS VGS = 0 V, ID = 100 µA 1200 - - VDS = 1200, VGS = 0 V -