LSIC1MO120E0160

SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET RoHS Product Summary Circuit Diagram TO-247-3L Characteristics Value VDS 1200 V Typical RDS(ON) 160 mΩ ID ( TC ≤ 100 °C) 14 A Features • O  ptimized for highfrequency, high-efficiency applications • E  xtremely low gate charge and output capacitance * 1 2 Unit * Body diode • N  ormally-off operation at all temperatures • Ultra-low on-resistance • H  alogen-free, RoHS compliant and lead-free • L  ow gate resistance for high-frequency switching 3 Environmental Applications • Littelfuse “RoHS” logo = RoHS RoHS conform • Littelfuse “HF” logo = Halogen Free • Littelfuse “Pb-free” logo = Pb-free lead plating Pb • H  igh-frequency applications • Solar Inverters • S  witch Mode Power Supplies • Motor Drives • H  igh Voltage DC/DC Converters • Battery Chargers • Induction Heating • UPS ©2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19 Pb SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Maximum Ratings Characteristics Symbol Conditions Value VGS = 20 V, TC = 25 °C 22 VGS = 20 V, TC = 100 °C 14 ID(pulse) TC = 25 °C 44 Power Dissipation PD TC = 25 °C, TJ = 150 °C Operating Junction Temperature TJ Continuous Drain Current ID Pulsed Drain Current 1 Unit A A 125 W -55 to 150 °C VGS,MAX Absolute maximum values -6 to 22 VGS,OP,TR Transient,