LSIC1MO120G0025
Silicon Carbide MOSFET Datasheet
LSIC1MO120G0025
1200 V, 25 mOhm N-Channel SiC MOSFET
Product Summary
Characteristic
Value
VDS
1200
V
Typical RDS(ON)
25
mOhm
70
A
ID (TC
°C)
Unit
Features
• Optimized for high-frequency, high-efficiency
applications
• Extremely low gate charge and output
capacitance
• Low gate resistance for high-frequency switching
• Normally-off operations at all temperatures
• Ultra-low on-resistance
• Optimized package with separate driver source
pin
• RoHS compliant, lead-free, and halogen-free
Agency Approvals and Environmental
Environmental Approvals
Pinout Diagram
Applications
• High-frequency applications
• Solar Inverters
• Switch Mode Power Supplies
• UPS
• Motor Drives
• High Voltage DC/DC Converters
• Battery Chargers
• Induction Heating
1
Specifications are subject to change without notice.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2021 Littelfuse, Inc.
Revised: 2/8/2021
LSIC1MO120G0025
Silicon Carbide MOSFET Datasheet
1. Maximum Ratings...........................................................................................................................................3
2. Thermal Characteristics ..................................................................................................................................3
3. Electrical Characteristics .................................................................................................................................3
3.1. Static Characteristics (TJ = 25 °C unless otherwise specified) ................................................................3
3.2. Dynamic Characteristics (TJ = 25 °C unless otherwise specified) ...........................................................4
4. Reverse Diode Characteristics (TJ = 25 °C unless otherwise specified) ........................................................4
5. Performance Curves .......................................................................................................................................5
6. Package Dimensions ......................................................................................................................................9
7. Part Numbering and Marking ..........................................................................................................................9
8. Packing Options ..............................................................................................................................................9
9. Packing Specifications ..................................................................................................................................10
2
Specifications are subject to change without notice.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2021 Littelfuse, Inc.
Revised: 2/8/2021
LSIC1MO120G0025
Silicon Carbide MOSFET Datasheet
1. Maximum Ratings
Characteristic
Symbol
Drain-Source Voltage
Conditions
Value
Unit
V
VDS
VGS = 0 V
1200
VGS = 20 V, TC = 25 °C
100
VGS = 20 V, TC = 100 °C
70
ID(pulse)
TC = 25 °C
200
A
PD
TC = 25 °C, TJ = 175 °C
500
W
Continuous Drain Current
ID
Pulsed Drain Current 1
Power Dissipation
VGS,MAX
Gate-Source Voltage
Absolute maximum values
Steady state
-6 to +22
VGS,OP,TR 2
Transient, ttransient < 300 nsec
-10 to +25
VGS,OP 3
Recommended DC operating values
-5 to +20
Operating Junction Temperature
A
V
TJ
-
-55 to +175
°C
Storage Temperature
TSTG
-
-55 to +150
°C
Lead Temperature for Soldering
Tsold
-
260
°C
Mounting Torque
MD
M3 or 6-32 screw
1.0
Nm
8.8
in-lb
Footnote 1: Pulse width limited by TJ,MAX
Footnote 2: See Figure 21. VGS Waveform Definition for further information
Footnote 3: MOSFET can operate with VGS(OFF) = 0 V. VGS(OFF) = -5 V provides added noise margin and faster turn-off speed
2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance, junction-to-case
Rth,JC,MAX
0.3
°C/W
Maximum Thermal Resistance, junction-to-ambient
Rth,JA,MAX
40
°C/W
3. Electrical Characteristics
3.1. Static Characteristics (T
J
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source On-State Resistance
Gate Threshold Voltage
Gate Resistance
= 25 °C unless otherwise specified)
Value
Symbol
Conditions
V(BR)DSS
VGS = 0 V, ID = 100 µA
1200
-
-
VDS = 1200, VGS = 0 V
-
