LSIC1MO120G0080

LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet LSIC1MO120G0080 1200 V, 80 mOhm N-Channel SiC MOSFET Product Summary Characteristic Value VDS 1200 V Typical RDS(ON) 80 mOhm 25 A ID (TC °C) Unit Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures • Ultra-low on-resistance • Optimized package with separate driver source pin Agency Approvals and Environmental Environmental Approvals Pinout Diagram Applications • High-frequency applications • Solar Inverters • Switch Mode Power Supplies • UPS • Motor Drives • High Voltage DC/DC Converters • Battery Chargers • Induction Heating 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet 1. Maximum Ratings...........................................................................................................................................3 2. Thermal Characteristics ..................................................................................................................................3 3. Electrical Characteristics .................................................................................................................................3 3.1. Static Characteristics (TJ = 25 °C unless otherwise specified) ................................................................3 3.2. Dynamic Characteristics (TJ = 25 °C unless otherwise specified) ...........................................................4 4. Reverse Diode Characteristics (TJ = 25 °C unless otherwise specified) ........................................................4 5. Performance Curves .......................................................................................................................................5 6. Package Dimensions ......................................................................................................................................9 7. Part Numbering and Marking ..........................................................................................................................9 8. Packing Options ..............................................................................................................................................9 9. Packing Specifications ..................................................................................................................................10 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet 1. Maximum Ratings Characteristic Symbol Drain-Source Voltage Conditions Value Unit V VDS Continuous Drain Current ID Pulsed Drain Current 1 1200 39 VGS = 20 V, TC = 100 °C 25 A ID(pulse) TC = 25 °C 80 A PD TC = 25 °C, TJ = 175 °C 214 W Power Dissipation VGS,MAX Gate-Source Voltage VGS = 0 V VGS = 20 V, TC = 25 °C Absolute maximum values Steady state -6 to +22 VGS,OP,TR 2 Transient, ttransient < 1 % duty cycle -10 to +25 VGS,OP 3 Recommended DC operating values -5 to +20 Operating Junction Temperature V TJ - -55 to +175 °C Storage Temperature TSTG - -55 to +150 °C Lead Temperature for Soldering Tsold - 260 °C Mounting Torque MD M3 or 6-32 screw 1.0 Nm 8.8 in-lb Footnote 1: Pulse width limited by TJ,MAX Footnote 2: See Figure 21 for further information Footnote 3: MOSFET can operate with VGS(OFF) = 0 V dependent upon PCB layout. VGS(OFF) = -5 V provides added noise margin and faster turn-off speed 2. Thermal Characteristics Characteristic Symbol Value Unit Maximum Thermal Resistance, junction-to-case Rth,JC,MAX 0.7 °C/W Maximum Thermal Resistance, junction-to-ambient Rth,JA,MAX 40 °C/W 3. Electrical Characteristics 3.1. Static Characteristics (T J Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On-State Resistance Gate Threshold Voltage Gate Resistance = 25 °C unless otherwise specified) Value Symbol Conditions V(BR)DSS VGS = 0 V, ID = 100 µA 1200 - - VDS = 1200, VGS = 0 V - 1 100 VDS = 1200 V, VGS = 0 V, TJ = 175 °C - 2 - IGSS,F VGS = 22 V, VDS = 0 V - - 100 IGSS,R VGS = -6 V, VDS = 0 V - - 100 100 IDSS RDS(ON) VGS(TH) RG Min Typ Max ID = 20 A, VGS = 20 V - 80 ID = 20 A, VGS = 20 V, TJ = 175 °C - 120 - VDS = VGS, ID = 10 mA 1.8 2.8 4.0 VDS = VGS, ID = 10 mA, TJ = 175 °C - 1.8 - Resonance method, Drain-Source shorted1 - 0.6 - Unit V µA nA V Footnote 1: For a description of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method 3 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet 3.2. Dynamic Characteristics (T J Characteristic = 25 °C unless otherwise specified) Value Symbol Conditions Turn-On Switching Energy EON Turn-Off Switching Energy EOFF VDD = 800 V, ID = 20 A, VGS = -5 / +20 V, RG,ext FWD = LSIC2SD120A20 Min Typ Max - 105 - - 59 - Total Per-Cycle Switching Energy ETS - 164 - Input Capacitance CISS - 1700 - Output Capacitance COSS - 82 - - 9 - - 26 - - 92 - - 28 - - 35 - - 12 - - 7 - - 17 - - 20 - Reverse Transfer Capacitance CRSS COSS Stored Energy EOSS Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDD = 800 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV VDD = 800 V, ID = 20 A, VGS = -5 / +20 V VDD = 800 V, ID = 20 A, VGS = -5 / +20 V, RG,ext RL = 40 Timing relative to VDS tr Turn-Off Delay Time td(off) Fall Time tf 4. Reverse Diode Characteristics (T J Characteristic Symbol Diode Forward Voltage VSD Continuous Diode Forward Current Peak Diode Forward Current 1 IS ISP Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm Unit µJ pF µJ nC ns = 25 °C unless otherwise specified) Value Conditions Unit Min Typ Max IS = 10 A, VGS = -5 V - 4.2 - IS = 10 A, VGS = -5 V, TJ = 175 °C - 3.7 - - - 35 - - 85 - 10 - ns - 350 - nC - 55 - A VGS = -5 V, TC = 25 °C VGS = -5 V, IS = 20 A, VR = 800 V, dI/dt = 10.7 A/ns V A Footnote 1: Pulse width limited by TJ,MAX 4 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet 5. Performance Curves Figure 1. Maximum Power Dissipation (TJ = 175 °C) Figure 2. Typical Transfer Characteristics 250 80 TJ = 25 °C Drain Current, ID (A) Power Dissipation, PD (W) 70 200 150 100 60 50 40 -55 °C 175 °C 30 20 50 10 (VDS = 10 V) 0 0 -75 -25 25 75 125 175 0 2 4 Case Temperature, TC (°C) Figure 3. Typical Output Characteristics (TJ = 25 °C) 10 12 14 16 18 20 80 70 70 VGS = 20 V 60 18 V 50 16 V Drain Current, ID (A) 40 14 V 30 20 12 V 10 10 V 60 VGS = 20 V 50 18 V 16 V 40 14 V 12 V 30 10 V 20 10 0 0 0 2 4 6 8 10 0 2 Drain-Source Voltage, VDS (V) 4 6 8 10 Drain-Source Voltage, VDS (V) Figure 5. Typical Output Characteristics (TJ = -55 °C) Figure 6. Typical Reverse Conduction Characteristics (TJ = 25 °C) 90 Reverse Voltage, VSD (V) 80 7 6 5 4 3 2 1 0 0 70 60 VGS = 20 V 50 18 V 10 20 40 30 16 V 30 -5 V 0 V 5V 10 V 40 20 14 V 10 12 V 10 V 0 0 2 4 6 8 VGS = 20 V 50 15 V 60 10 Reverse Current, IS (A) Drain Current, ID (A) 8 Figure 4. Typical Output Characteristics (TJ = 175 °C) 80 Drain Current, ID (A) 6 Gate-Source Voltage, VGS (V) 70 Drain-Source Voltage, VDS (V) 80 5 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet Figure 7. Typical Reverse Conduction Characteristics (TJ = 175 °C) Figure 8. Typical Reverse Conduction Characteristics (TJ = -55 °C) 5 4 3 Reverse Voltage, VSD (V) 2 1 0 5V 7 VGS = 20 V 4 3 2 1 0 10 10 30 15 V 40 10 V 5 0 20 -5 V 0 V 6 0 50 60 Reverse Current, IS (A) 6 20 30 -5 V 0 V 5V 10 V 15 V 40 VGS = 20 V 50 60 70 70 80 80 Figure 9. Transient Thermal Impedance Reverse Current, IS (A) Reverse Voltage, VSD (V) 7 Figure 10. Maximum Safe Operating Area (TC = 25 °C) 100 Thermal Impedance, Zth,JC (°C/W) 1E+0 1E-1 1E-2 Drain Current, ID (A) Duty = 0.5 0.3 0.1 0.05 0.02 0.01 1E-3 Pulse 10 µs 10 100 µs 1 1 ms Single Pulse Single Pulse 1E-4 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 0.1 1 Pulse Width (s) 10 100 1000 Drain-Source Voltage, VDS (V) Figure 11. On-resistance vs. Drain Current Figure 12. Normalized On-resistance vs. Junction Temperature 1.6 Normalized On-resistance, RDS(ON) 200 On-resistance, RDS(ON) (mOhm) 100 ms 0.1 180 TJ = 175 °C 160 140 -55 °C 120 100 25 °C 80 60 40 20 (VGS = 20 V) 0 10 20 1.4 1.2 1 0.8 0.6 0.4 0.2 (VGS = 20 V, ID = 20 A) 0 30 40 50 60 -75 Drain Current, ID (A) -50 -25 0 25 50 75 100 125 150 175 200 Junction Temperature, TJ (°C) 6 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet Figure 13. Typical On-resistance vs. Junction Temperature Figure 14. Typical Threshold Voltage 4 180 VGS = 16 V Threshold Voltage, VGS(TH) (V) On-resistance, RDS(ON) (mOhm) 200 160 140 18 V 120 100 80 20 V 60 40 20 -50 3 2.5 2 1.5 1 0.5 (VDS = VGS, ID = 10 mA) (ID = 20 A) 0 3.5 0 0 50 100 150 -75 -50 Junction Temperature, TJ (°C) -25 0 25 50 75 100 125 150 175 200 Junction Temperature, TJ (°C) Figure 15. Typical Junction Capacitances up to 1000 V Figure 16. Typical Junction Capacitances up to 200 V 10000 10000 CISS 100 Capacitance (pF) Capacitance (pF) 1000 COSS 10 CISS 1000 COSS 100 CRSS (f = 1 MHz) (f = 1 MHz) 1 0 200 400 600 800 1000 0 50 Drain-Source Voltage, VDS (V) 100 150 200 Drain-Source Voltage, VDS (V) Figure 17. Typical COSS Stored Energy EOSS Figure 18. Typical Gate Charge 40 20 Gate-Source Voltage, VGS (V) 35 Stored Energy, EOSS (µJ) CRSS 10 30 25 20 15 10 5 15 10 5 0 (VDD = 800 V, ID = 20 A) 0 -5 0 200 400 600 800 1000 0 Drain-Source Voltage, VDS (V) 10 20 30 40 50 60 70 80 90 100 Gate Charge, QG (nC) 7 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet Figure 19. Typical Switching Energy vs. Drain Current Figure 20. Typical Switching Energy vs. External Gate Resistance 1000 VDD = 800 V RG,ext = 2 Ohm VGS = -5/+20 V FWD = LSIC2SD120A20 TJ = 25 °C L = 714 µH 250 200 VDD = 800 V ID = 20 A VGS = -5/+20 V FWD = LSIC2SD120A20 TJ = 25 °C L = 714 µH 900 Switching Energy, ESW (µJ) Switching Energy, ESW (µJ) 300 Etot 150 Eon 100 Eoff 50 800 700 Etot Eon 600 500 400 300 Eoff 200 100 0 0 0 5 10 15 20 25 30 35 40 45 0 Drain Current, ID (A) 5 10 15 20 25 30 External Gate Resistance, RG,ext (Ohm) Figure 21. VGS Waveform Definition +25 V ttransient +22 V 0V ttransient -6 V -10 V 8 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet 6. Package Dimensions Symbol Millimeters Min Max A 4.70 5.31 A1 2.21 2.59 A2 1.50 2.49 b 0.99 1.40 b2 1.65 2.39 c 0.38 0.89 D 20.80 21.46 D1 13.08 - D2 0.51 1.35 E 15.49 16.26 e Recommended Hole Pattern Layout: 2.54 BSC e1 4.83 5.33 E1 13.46 - E2 3.56 4.06 L 19.81 20.32 L1 - 4.50 Notes: øP 3.56 3.66 1. Dimensioning and tolerancing as per ASME Y14.5 2009. øP1 7.06 7.39 Q 5.38 2. Package outline in compliance with JEDEC Standard Var. Ad. S 6.20 6.17 BSC 3. Dimension D, E do not include mold flash. 4. Mold draft angles excluded on the table. 5. øP to have a maximum draft angle of 1.7° to the top with a maximum hole diameter of 3.912 mm. 7. Part Numbering and Marking SiC = SiC 1 = Gen 1 MO = MOSFET 120 = Voltage Rating (1200 V) G = TO-247-4L 0080 = RDS(ON) (80 mOhm) YY = Year WW = Week D = Special Code ZZZZZZ-ZZ = Lot Number 8. Packing Options 9 Part Number Marking LSIC1MO120G0080 SIC1MO120G0080 Packing Mode Tube (30 pcs) M.O.Q. 450 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020 LSIC1MO120G0080 Silicon Carbide MOSFET Datasheet 9. Packing Specifications For additional information please visit www.Littelfuse.com/powersemi Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, lifesaving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly forth in applicable Littelfuse product documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics 10 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 12/14/2020