LSIC1MO170E1000

SiC MOSFET SiC MOSFET Diode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET RoHS Product Summary Characteristics Circuit Diagram TO-247-3L Value Unit VDS 1700 V Typical RDS(ON) 750 mΩ ID ( TC ≤ 100 °C) 3.5 A Features • O  ptimized for highfrequency, high-efficiency applications • N  ormally-off operation at all temperatures • Ultra-low on-resistance • E  xtremely low gate charge and output capacitance * * Body diode 1 2 • L  ow gate resistance for high-frequency switching 3 Environmental • L  ittelfuse “RoHS” logo = RoHS conform Applications RoHS • L  ittelfuse “HF” logo = Halogen Free • Littelfuse “Pb-free” logo = Pb Pb-free lead plating • H  igh-frequency applications • Solar Inverters • S  witch Mode Power Supplies • Motor Drives • H  igh Voltage DC/DC Converters • Battery Chargers • Induction Heating • UPS © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Rev 0.3, Revised: 07/16/18 Pb SiC MOSFET SiC MOSFET Diode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L Maximum Ratings Characteristics Conditions Value VGS = 20 V, TC = 25 °C 5.0 VGS = 20 V, TC = 100 °C 3.5 ID(pulse) TC = 25 °C 15 PD TC = 25 °C, TJ = 150 °C Symbol Continuous Drain Current ID Pulsed Drain Current 1 Power Dissipation Operating Junction Temperature TJ Gate-source Voltage Unit A A 54 W -55 to 150 °C VGS,MAX Absolute maximum values -6 to 22 VGS,OP,TR Transient,