GEN2 SiC Schottky Diode
LSIC2SD065A20A, 650V, 20A, TO-220-2L
LSIC2SD065A20A 650 V, 20 A SiC Schottky Barrier Diode
RoHS Pb
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability,
and a maximum operating junction temperature of 175
°C. These diodes series are ideal for applications where
improvements in efficiency, reliability, and thermal
management are desired.
Features
*Image for reference only, for details refer to Dimensions-Package.
• AEC-Q101 qualified
• Excellent surge capability
• P
ositive temperature
coefficient for safe
operation and ease of
paralleling
• E
xtremely fast,
temperature-independent
switching behavior
• 1
75 °C maximum
operating junction
temperature
Circuit Diagram TO-220-2L
• D
ramatically reduced
switching losses
compared to Si bipolar
diodes
Applications
Case
• B
oost diodes in PFC or
DC/DC stages
Case
• S
witch-mode power
supplies
• Solar inverters
• Industrial motor drives
• EV charging stations
• U
ninterruptible power
supplies
1
1
Environmental
2
2
• L
ittelfuse “RoHS” logo =
RoHS conform
RoHS
• L
ittelfuse “HF” logo =
Halogen Free
• L
ittelfuse “Pb-free” logo=
Pb-free lead plating
Pb
Maximum Ratings
Characteristics
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Symbol
Conditions
Value
Unit
VRRM
-
650
V
V
VR
IF
Non-Repetitive Forward Surge Current
IFSM
Power Dissipation
PTot
Operating Junction Temperature
TJ = 25 °C
650
TC = 25 °C
45
TC = 135 °C
20
TC = 25 °C, TP = 10 ms, Half sine pulse
90
TC = 25 °C
135
TC = 110 °C
60
A
A
W
TJ
-
-55 to 175
°C
Storage Temperature
TSTG
-
-55 to 150
°C
Soldering Temperature
TSOLD
-
260
°C
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/16/20
GEN2 SiC Schottky Diode
LSIC2SD065A20A, 650V, 20A, TO-220-2L
Electrical Characteristics (TJ =25 °C unless otherwise specified)
Characteristics
Symbol
Forward Voltage
VF
Reverse Current
IR
Total Capacitance
C
Total Capacitive Charge
Value
Conditions
Min.
Max.
IF = 20 A, TJ = 25 °C
-
1.5
1.8
IF = 20 A, TJ = 175 °C
-
1.85
-
VR = 650 V , TJ = 25 °C
-
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