LSIC2SD065C06A

GEN2 SiC Schottky Diode LSIC2SD065C06A, 650 V, 6 A, TO-252-2L (DPAK) LSIC2SD065C06A 650 V, 6 A SiC Schottky Barrier Diode RoHS Pb Description SiC This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and Schottky Diodeoperating junction temperature of 175 °C. These a maximum diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • AEC-Q101 qualified • Excellent surge capability • P  ositive temperature coefficient for safe operation and ease of paralleling • E  xtremely fast, temperature-independent switching behavior • 1  75 °C maximum operating junction temperature Circuit Diagram TO-252-2L (DPAK) Applications • B  oost diodes in PFC or DC/DC stages Case Case • D  ramatically reduced switching losses compared to Si bipolar diodes • S  witch-mode power supplies • Solar inverters • Industrial motor drives • EV charging stations • U  ninterruptible power supplies Environmental 1 2 1 • L  ittelfuse “RoHS” logo = RoHS conform 2 RoHS • L  ittelfuse “HF” logo = Halogen Free • L  ittelfuse “Pb-free” logo = Pb Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit VRRM - 650 V TJ = 25 °C 650 V TC = 25 °C 18.5 IF TC = 135 °C 8.6 TC = 152 °C 6 Non-Repetitive Forward Surge Current IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 32 Power Dissipation PTot TC = 25 °C 75 TC = 110 °C 32 Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Operating Junction Temperature VR A A W TJ - -55 to +175 °C Storage Temperature TSTG - -55 to +150 °C Soldering Temperature (reflow MSL 1) TSOLD - 260 °C © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19 GEN2 SiC Schottky Diode LSIC2SD065C06A, 650 V, 6 A, TO-252-2L (DPAK) Electrical Characteristics Characteristics Symbol Forward Voltage VF Reverse Current IR Capacitance C Value Conditions SiC Schottky Diode Max. - 1.5 1.8 IF = 6 A, TJ = 175 °C - 1.85 - VR = 650 V , TJ = 25 °C -