LSIC2SD065C20A

GEN2 SiC Schottky Diode LSIC2SD065C20A, 650 V, 20 A, TO-252-2L (DPAK) LSIC2SD065C20A 650 V, 20 A SiC Schottky Barrier Diode RoHS Pb Description SiC This series of silicon carbide (SiC) Schottky diodes has reverse recovery current, high surge capability, Schottkynegligible Diode and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • AEC-Q101 qualified • Excellent surge capability • P  ositive temperature coefficient for safe operation and ease of paralleling • E  xtremely fast, temperature-independent switching behavior • 1  75 °C maximum operating junction temperature Circuit Diagram TO-252-2L (DPAK) Applications • B  oost diodes in PFC or DC/DC stages • S  witch-mode power supplies Case Case • D  ramatically reduced switching losses compared to Si bipolar diodes • Solar inverters • Industrial motor drives • EV charging stations • U  ninterruptible power supplies Environmental 1 2 • L  ittelfuse “RoHS” logo = RoHS conform 1 2 RoHS • L  ittelfuse “HF” logo = Halogen Free • L  ittelfuse “Pb-free” logo = Pb Pb-free lead plating Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Forward Surge Current Symbol Conditions Value Unit VRRM - 650 V V VR IF IFSM TJ = 25 °C 650 TC = 25 °C 45 TC = 135 °C 20 TC = 25 °C, TP = 10 ms, Half sine pulse 90 A A TC = 25 °C 135 TC = 110 °C 60 TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature (reflow MSL1) Tsold - 260 °C Power Dissipation PTot Operating Junction Temperature W © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19 GEN2 SiC Schottky Diode LSIC2SD065C20A, 650 V, 20 A, TO-252-2L (DPAK) Electrical Characteristics Characteristics Symbol Forward Voltage VF Reverse Current IR Total Capacitance C Value Conditions SiC Schottky Diode Min. Typ. Max. IF = 20 A, TJ = 25 °C - 1.5 1.8 IF = 20 A, TJ = 175 °C - 1.85 - VR = 650 V , TJ = 25 °C -