LSIC2SD065D10A

GEN2 SiC Schottky Diode LSIC2SD065D10A, 650 V, 10 A, TO-263-2L (D2PAK) LSIC2SD065D10A 650 V, 10 A SiC Schottky Barrier Diode RoHS Description SiC This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a Schottky Diode maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • AEC-Q101 qualified • Excellent surge capability • P  ositive temperature coefficient for safe operation and ease of paralleling • E  xtremely fast, temperature-independent switching behavior • 1  75 °C maximum operating junction temperature Circuit Diagram TO-263-2L Applications Case Case • B  oost diodes in PFC or DC/DC stages • S  witch-mode power supplies 1 • D  ramatically reduced switching losses compared to Si bipolar diodes • Solar inverters • Industrial motor drives • EV charging stations • U  ninterruptible power supplies 2 1 2 Environmental • L  ittelfuse “RoHS” logo = RoHS conform RoHS • L  ittelfuse “HF” logo = Halogen Free • L  ittelfuse “Pb-free” logo = Pb Pb-free lead plating Maximum Ratings Characteristics Conditions Value Unit VRRM - 650 V DC Blocking Voltage VR TJ = 25 °C 650 V TC = 25 °C 27 Continuous Forward Current IF TC = 135 °C 12.5 TC = 147 °C 10 IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 48 TC = 25 °C 100 TC = 110 °C 43 Repetitive Peak Reverse Voltage Non-Repetitive Forward Surge Current Symbol A A Power Dissipation PTot W Operating Junction Temperature TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature TSOLD - 260 °C © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/05/19 Pb GEN2 SiC Schottky Diode LSIC2SD065D10A, 650 V, 10 A, TO-263-2L (D2PAK) Electrical Characteristics (TJ = 25 °C unless otherwise specified) Characteristics SiCConditions Schottky Diode Symbol Forward Voltage VF Reverse Current IR Total Capacitance C Value Min. Typ. Max. IF = 10 A, TJ = 25 °C - 1.5 1.8 IF = 10 A, TJ = 175 °C - 1.85 - VR = 650 V , TJ = 25 °C -