LSIC2SD065E16CCA

GEN2 SiC Schottky Diode LSIC2SD065E16CCA, 650 V, 16 A, TO-247-3L LSIC2SD065E16CCA 650 V, 16 A SiC Schottky Barrier Diode RoHS Pb Description SiC This series of silicon carbide (SiC) Schottky diodes has reverse recovery current, high surge capability, Schottkynegligible Diode and a maximum operating junction temperature of 175 °C. This diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • AEC-Q101 qualified • Excellent surge capability • P  ositive temperature coefficient for safe operation and ease of paralleling • E  xtremely fast, temperature-independent switching behavior • 1  75 °C. maximum operating junction temperature Applications Circuit Diagram TO-247-3L • B  oost diodes in PFC or DC/DC stages PIN 1 • S  witch-mode power supplies • Solar inverters • Industrial motor drives • EV charging stations • U  ninterruptible power supplies CASE PIN 2 • D  ramatically reduced switching losses compared to Si bipolar diodes Environmental PIN 3 • L  ittelfuse “RoHS” logo = RoHS conform RoHS • L  ittelfuse “HF” logo = Halogen Free 1 2 3 • L  ittelfuse “Pb-free” logo = Pb Pb-free lead plating Maximum Ratings Characteristics Conditions Value Unit VRRM - 650 V DC Blocking Voltage VR TJ = 25 °C 650 V Continuous Forward Current (Per Leg/Component) TC = 25 °C 23 / 46 IF TC = 135 °C 10.7 / 21.4 TC = 150 °C 8 / 16 TC = 25 °C, tP = 10 ms, Half sine pulse 40 Repetitive Peak Reverse Voltage Symbol Non-Repetitive Forward Surge Current (Per Leg) IFSM Power Dissipation (Per Leg/Component) PTot Operating Junction Temperature A A TC = 25 °C 88 / 176 TC = 110 °C 38 / 76 TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature Tsold - 260 °C W © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/04/19 GEN2 SiC Schottky Diode LSIC2SD065E16CCA, 650 V, 16 A, TO-247-3L Electrical Characteristics (TJ = 25 °C unless otherwise specified) Characteristics SiCConditions Schottky Diode Symbol Forward Voltage VF Reverse Current IR Total Capacitance C Value Min. Typ. Max. IF = 8 A, TJ = 25 °C - 1.5 1.8 IF = 8 A, TJ = 175 °C - 1.85 - VR = 650 V, TJ = 25 °C -