LSIC2SD065E20CCA

GEN2 SiC Schottky Diode LSIC2SD065E20CCA, 650 V, 20 A, TO-247-3L LSIC2SD065E20CCA 650 V, 20 A SiC Schottky Barrier Diode RoHS Pb Description SiC This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and Schottky Diodeoperating junction temperature of 175 °C. This a maximum diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • AEC-Q101 qualified • Excellent surge capability • P  ositive temperature coefficient for safe operation and ease of paralleling • E  xtremely fast, temperature-independent switching behavior • 1  75 °C. maximum operating junction temperature Applications Circuit Diagram TO-247-3L • B  oost diodes in PFC or DC/DC stages PIN 1 • S  witch-mode power supplies • Solar inverters • Industrial motor drives • EV charging stations • U  ninterruptible power supplies CASE PIN 2 • D  ramatically reduced switching losses compared to Si bipolar diodes Environmental PIN 3 • L  ittelfuse “RoHS” logo = RoHS conform RoHS • L  ittelfuse “HF” logo = Halogen Free 1 2 3 • L  ittelfuse “Pb-free” logo = Pb Pb-free lead plating Maximum Ratings Characteristics Conditions Value Unit VRRM - 650 V DC Blocking Voltage VR TJ = 25 °C 650 V Continuous Forward Current (Per Leg/Component) IF Repetitive Peak Reverse Voltage Symbol TC = 25 °C 27 / 54 TC = 147 °C 10 / 20 TC = 25 °C, tP = 10 ms, Half sine pulse 50 TC = 25 °C 100 / 200 TC = 110 °C 43 / 86 A Non-Repetitive Forward Surge Current (Per Leg) IFSM Power Dissipation (Per Leg/Component) PTot Operating Junction Temperature TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature Tsold - 260 °C A W © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/04/19 GEN2 SiC Schottky Diode LSIC2SD065E20CCA, 650 V, 20 A, TO-247-3L Electrical Characteristics (TJ = 25 °C unless otherwise specified) Characteristics SiCConditions Schottky Diode Symbol Forward Voltage VF Reverse Current IR Total Capacitance C Value Min. Typ. Max. IF = 10 A, TJ = 25 °C - 1.5 1.8 IF = 10 A, TJ = 175 °C - 1.85 - VR = 650 V, TJ = 25 °C -