GEN2 SiC Schottky Diode
LSIC2SD120A08, 1200 V, 8 A, TO-220-2L
LSIC2SD120A08
RoHS
Description
SiC
This series of silicon carbide (SiC) Schottky diodes has
reverse recovery current, high surge capability,
Schottkynegligible
Diode
and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Features
• P
ositive temperature
coefficient for safe
operation and ease of
paralleling
• 1
75 °C maximum
operating junction
temperature
• E
xtremely fast,
temperature-independent
switching behavior
• D
ramatically reduced
switching losses
compared to Si bipolar
diodes
• Excellent surge capability
Circuit Diagram TO-220-2L
Applications
Case
Case
• B
oost diodes in PFC or
DC/DC stages
• S
witch-mode power
supplies
1
• Solar inverters
• Industrial motor drives
• EV charging stations
• U
ninterruptible power
supplies
2
Environmental
1
2
• L
ittelfuse “RoHS” logo =
RoHS conform
RoHS
• L
ittelfuse “HF” logo =
Halogen Free
• L
ittelfuse “PB-free” logo = Pb
Pb-free lead plating
Maximum Ratings
Characteristics
Repetitive Peak Reverse Voltage
Symbol
Conditions
Value
Unit
VRRM
-
1200
V
V
DC Blocking Voltage
VR
Tj = 25 °C
1200
TC = 25 °C
24.5
Continuous Forward Current
IF
TC = 135 °C
12
TC = 154 °C
8
Non-Repetitive Forward Surge Current
IFSM
TC = 25 °C, TP = 10 ms, Half sine pulse
65
Power Dissipation
PTot
Operating Junction Temperature
A
A
TC = 25 °C
125
TC = 110 °C
54
TJ
-
-55 to 175
°C
Storage Temperature
TSTG
-
-55 to 150
°C
Soldering Temperature
Tsold
-
260
°C
W
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/20/17
Pb
GEN2 SiC Schottky Diode
LSIC2SD120A08, 1200 V, 8 A, TO-220-2L
Electrical Characteristics
Characteristics
SiCConditions
Schottky Diode
Symbol
Forward Voltage
VF
Reverse Current
IR
Total Capacitance
C
Value
Min.
Typ.
Max.
IF = 8 A, TJ = 25 °C
-
1.5
1.8
IF = 8 A, TJ = 175 °C
-
2.2
-
VR = 1200 V , TJ = 25 °C
-
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