LSIC2SD120A15

GEN2 SiC Schottky Diode LSIC2SD120A15, 1200 V, 15 A, TO-220-2L LSIC2SD120A15 RoHS Pb Description SiC This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and Schottky Diodeoperating junction temperature of 175 °C. These a maximum diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • P  ositive temperature coefficient for safe operation and ease of paralleling • 1  75 °C maximum operating junction temperature • E  xtremely fast, temperature-independent switching behavior • D  ramatically reduced switching losses compared to Si bipolar diodes • Excellent surge capability Circuit Diagram TO-220-2L Applications Case Case • B  oost diodes in PFC or DC/DC stages • S  witch-mode power supplies 1 • Solar inverters • Industrial motor drives • EV charging stations • U  ninterruptible power supplies 2 Environmental 1 2 • L  ittelfuse “RoHS” logo = RoHS conform RoHS • L  ittelfuse “HF” logo = Halogen Free • L  ittelfuse “PB-free” logo = Pb Pb-free lead plating Maximum Ratings Characteristics Repetitive Peak Reverse Voltage Symbol Conditions Value Unit VRRM - 1200 V 1200 V DC Blocking Voltage VR TJ= 25 °C TC = 25 °C 44 Continuous Forward Current IF TC = 135 °C 21 TC = 150 °C 15 Non-Repetitive Forward Surge Current IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 120 Power Dissipation PTot Operating Junction Temperature A A TC = 25 °C 214 TC = 110 °C 93 TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature Tsold - 260 °C W © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17 GEN2 SiC Schottky Diode LSIC2SD120A15, 1200 V, 15 A, TO-220-2L Electrical Characteristics Characteristics Forward Voltage VF Reverse Current IR Total Capacitance Value SiCConditions Schottky Diode Symbol C Min. Typ. Max. IF = 15 A, TJ = 25 °C - 1.5 1.8 IF = 15 A, TJ = 175 °C - 2.2 VR = 1200 V , TJ = 25 °C -