LSIC2SD120A20

GEN2 SiC Schottky Diode LSIC2SD120A20, 1200 V, 20 A, TO-220-2L LSIC2SD120A20 RoHS Pb Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • P  ositive temperature coefficient for safe operation and ease of paralleling • 1  75 °C maximum operating junction temperature • E  xtremely fast, temperature-independent switching behavior • D  ramatically reduced switching losses compared to Si bipolar diodes • Excellent surge capability Circuit Diagram TO-220-2L Applications • B  oost diodes in PFC or DC/DC stages Case Case • S  witch-mode power supplies • Solar inverters • Industrial motor drives • EV charging stations • U  ninterruptible power supplies 1 2 Environmental • L  ittelfuse “RoHS” logo = RoHS conform 1 2 RoHS • L  ittelfuse “HF” logo = Halogen Free • L  ittelfuse “PB-free” logo = Pb Pb-free lead plating Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Forward Surge Current Power Dissipation Operating Junction Temperature Symbol Conditions Value Unit VRRM - 1200 V VR TJ = 25 °C 1200 V TC = 25 °C 54.5 TC = 135 °C 26.0 TC = 150 °C 20.0 IF IFSM PTot TC = 25 °C, TP = 10 ms, Half sine pulse 140 TC = 25 °C 250 TC = 110 °C 108 A A W TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature Tsold - 260 °C © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20 GEN2 SiC Schottky Diode LSIC2SD120A20, 1200 V, 20 A, TO-220-2L Electrical Characteristics Characteristics Symbol Forward Voltage VF Reverse Current IR Total Capacitance C Value Conditions Min. Typ. Max. IF = 20 A, TJ = 25 °C - 1.5 1.8 IF = 20 A, TJ = 175 °C - 2.2 100 VR = 1200 V , TJ = 25 °C -