LSIC2SD120C05

GEN2 SiC Schottky Diode LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK) LSIC2SD120C05 RoHS Pb Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • P  ositive temperature coefficient for safe operation and ease of paralleling • 1  75 °C maximum operating junction temperature • E  xtremely fast, temperature-independent switching behavior • D  ramatically reduced switching losses compared to Si bipolar diodes • Excellent surge capability Circuit Diagram TO-252-2L ( DPAK ) Applications • B  oost diodes in PFC or DC/DC stages Case • S  witch-mode power supplies • Solar inverters • Industrial motor drives • EV charging stations • U  ninterruptible power supplies Environmental Pin 1 Pin 2 1 2 • L  ittelfuse “RoHS” logo = RoHS conform RoHS • L  ittelfuse “HF” logo = Halogen Free • L  ittelfuse “PB-free” logo = Pb PB--free lead plating Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Forward Surge Current Power Dissipation Symbol Conditions Value Unit VRRM - 1200 V V Tj = 25 °C 1200 TC = 25 °C 18.1 IF TC = 135 °C 8.7 TC = 159 °C 5 IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 40 TC = 25 °C 100 TC = 110 °C 43.3 VR PTot A A W TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature (reflow MSL 1) Tsold - 260 °C Operating Junction Temperature © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 GEN2 SiC Schottky Diode LSIC2SD120C05, 1200 V, 5 A, TO-252-2L (DPAK) Electrical Characteristics Characteristics Symbol Forward Voltage VF Reverse Current IR Total Capacitance Value Conditions C Min. Max. 1.8 IF = 5 A, TJ = 25 °C - 1.5 IF = 5 A, TJ = 175 °C - 2.1 VR = 1200 V , TJ = 25 °C -