LSIC2SD120D10

GEN2 SiC Schottky Diode LSIC2SD120D10, 1200 V, 10 A, TO-263-2L LSIC2SD120D10 Series RoHS Pb Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. This diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • P  ositive temperature coefficient for safe operation and ease of paralleling • E  xtremely fast, temperature-independent switching behavior • D  ramatically reduced switching losses compared to Si bipolar diodes • 1  75 °C maximum operating junction temperature • Excellent surge capability Circuit Diagram TO-263-2L Applications Case Case • B  oost diodes in PFC or DC/DC stages • Solar inverters • Industrial motor drives • S  witch-mode power supplies 1 • EV charging stations • U  ninterruptible power supplies 2 1 2 Environmental • L  ittelfuse “RoHS” logo = RoHS conform RoHS • L  ittelfuse “HF” logo = Halogen Free • L  ittelfuse “Pb-free” logo = Pb-free lead plating Pb Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage DC Blocking Voltage VRRM - 1200 V VR Tj = 25 °C 1200 V TC = 25 °C 28 15 Continuous Forward Current IF TC = 125 °C TC = 151 °C 10 Non-Repetitive Forward Surge Current IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 80 TC = 25 °C 136 TC = 110 °C 59 A A Power Dissipation PTot W Operating Junction Temperature TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature (reflow MSL1) Tsold - 260 °C © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20 GEN2 SiC Schottky Diode LSIC2SD120D10, 1200 V, 10 A, TO-263-2L Electrical Characteristics Value Characteristics Symbol Forward Voltage VF Reverse Current IR Total Capacitance Conditions C Total Capacitive Charge QC Min. Typ. Max. 1.8 IF = 10 A, TJ = 25 °C - 1.5 IF = 10 A, TJ = 175 °C - 2.2 VR = 1200 V , TJ = 25 °C -