GEN2 SiC Schottky Diode
LSIC2SD120E15CC, 1200 V, 15 A, TO-247-3L
LSIC2SD120E15CC
RoHS Pb
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Features
• P
ositive temperature
coefficient for safe
operation and ease of
paralleling
• 1
75 °C maximum
operating junction
temperature
• E
xtremely fast,
temperature-independent
switching behavior
• D
ramatically reduced
switching losses
compared to Si bipolar
diodes
• Excellent surge capability
Circuit Diagram TO247-3L
Applications
• B
oost diodes in PFC or
DC/DC stages
PIN 1
PIN 2
• S
witch-mode power
supplies
• Solar inverters
• Industrial motor drives
• EV charging stations
• U
ninterruptible power
supplies
CASE
Environmental
PIN 3
• L
ittelfuse “RoHS” logo =
RoHS conform
RoHS
• L
ittelfuse “HF” logo =
Halogen Free
• L
ittelfuse “PB-free” logo
= Pb-free lead plating
Pb
Maximum Ratings
Characteristics
Symbol
Conditions
Value
Unit
Repetitive Peak Reverse Voltage
DC Blocking Voltage
VRRM
-
1200
V
VR
Tj = 25 °C
1200
V
TC = 25 °C
24.5/49
Continuous Forward Current
(Per Leg/Device)
IF
TC = 135 °C
12/24
TC = 154 °C
8/16
Non-Repetitive Forward Surge Current (Per Leg)
IFSM
TC = 25 °C, TP = 10 ms, Half sine pulse
65
TC = 25 °C
125/250
TC = 110 °C
54/108
Power Dissipation
(Per Leg/Device)
PTot
A
A
W
Operating Junction Temperature
TJ
-
-55 to 175
°C
Storage Temperature
TSTG
-
-55 to 150
°C
Soldering Temperature
Tsold
-
260
°C
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: January 7, 2020 11:01 PM
GEN2 SiC Schottky Diode
LSIC2SD120E15CC, 1200 V, 15 A, TO-247-3L
Electrical Characteristics (Per Leg)
Characteristics
Symbol
Forward Voltage
VF
Reverse Current
IR
Total Capacitance
C
Total Capacitive Charge
Value
Conditions
QC
Min.
Typ.
Max.
IF = 8 A, TJ = 25 °C
-
1.5
1.8
IF = 8 A, TJ = 175 °C
-
2.2
-
VR = 1200 V , TJ = 25 °C
-
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