LSIC2SD120E20CC

GEN2 SiC Schottky Diode LSIC2SD120E20CC, 1200 V, 20 A, TO-247-3L LSIC2SD120E20CC RoHS Pb Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features • P  ositive temperature coefficient for safe operation and ease of paralleling • 1  75 °C maximum operating junction temperature • E  xtremely fast, temperature-independent switching behavior • D  ramatically reduced switching losses compared to Si bipolar diodes • Excellent surge capability Circuit Diagram TO247-3L Applications • B  oost diodes in PFC or DC/DC stages • S  witch-mode power supplies PIN 1 • Industrial motor drives • EV charging stations • U  ninterruptible power supplies CASE PIN 2 • Solar inverters Environmental PIN 3 • L  ittelfuse “RoHS” logo = RoHS conform RoHS • L  ittelfuse “HF” logo = Halogen Free 1 2 • L  ittelfuse “PB-free” logo = Pb Pb-free lead plating 3 Maximum Ratings Characteristics Symbol Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current (Per Leg/Device) Non-Repetitive Forward Surge Current (Per Leg) Power Dissipation (Per Leg/Device) Conditions Value Unit VRRM - 1200 V VR TJ = 25 °C 1200 V TC = 25 °C 28/56 IF TC = 135 °C 13.5/27 TC = 151 °C 10/20 IFSM PTot TC = 25 °C, TP = 10 ms, Half sine pulse 80 TC = 25 °C 136/272 TC = 110 °C 59/118 A A W Operating Junction Temperature TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Soldering Temperature Tsold - 260 °C © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/20 GEN2 SiC Schottky Diode LSIC2SD120E20CC, 1200 V, 20 A, TO-247-3L Electrical Characteristics (Per Leg) Characteristics Symbol Forward Voltage VF Reverse Current IR Total Capacitance C Total Capacitive Charge Value Conditions QC Min. Typ. Max. IF = 10 A, TJ = 25 °C - 1.5 1.8 IF = 10 A, TJ = 175 °C - 2.2 - VR = 1200 V , TJ = 25 °C -