GEN2 SiC Schottky Diode
LSIC2SD120E20CC, 1200 V, 20 A, TO-247-3L
LSIC2SD120E20CC
RoHS Pb
Description
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a
maximum operating junction temperature of 175 °C. These
diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management
are desired.
Features
• P
ositive temperature
coefficient for safe
operation and ease of
paralleling
• 1
75 °C maximum
operating junction
temperature
• E
xtremely fast,
temperature-independent
switching behavior
• D
ramatically reduced
switching losses
compared to Si bipolar
diodes
• Excellent surge capability
Circuit Diagram TO247-3L
Applications
• B
oost diodes in PFC or
DC/DC stages
• S
witch-mode power
supplies
PIN 1
• Industrial motor drives
• EV charging stations
• U
ninterruptible power
supplies
CASE
PIN 2
• Solar inverters
Environmental
PIN 3
• L
ittelfuse “RoHS” logo =
RoHS conform
RoHS
• L
ittelfuse “HF” logo =
Halogen Free
1
2
• L
ittelfuse “PB-free” logo = Pb
Pb-free lead plating
3
Maximum Ratings
Characteristics
Symbol
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
(Per Leg/Device)
Non-Repetitive Forward Surge Current (Per Leg)
Power Dissipation
(Per Leg/Device)
Conditions
Value
Unit
VRRM
-
1200
V
VR
TJ = 25 °C
1200
V
TC = 25 °C
28/56
IF
TC = 135 °C
13.5/27
TC = 151 °C
10/20
IFSM
PTot
TC = 25 °C, TP = 10 ms, Half sine pulse
80
TC = 25 °C
136/272
TC = 110 °C
59/118
A
A
W
Operating Junction Temperature
TJ
-
-55 to 175
°C
Storage Temperature
TSTG
-
-55 to 150
°C
Soldering Temperature
Tsold
-
260
°C
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/07/20
GEN2 SiC Schottky Diode
LSIC2SD120E20CC, 1200 V, 20 A, TO-247-3L
Electrical Characteristics (Per Leg)
Characteristics
Symbol
Forward Voltage
VF
Reverse Current
IR
Total Capacitance
C
Total Capacitive Charge
Value
Conditions
QC
Min.
Typ.
Max.
IF = 10 A, TJ = 25 °C
-
1.5
1.8
IF = 10 A, TJ = 175 °C
-
2.2
-
VR = 1200 V , TJ = 25 °C
-
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