LSIC2SD170B10

LSIC2SD170B10 Silicon Carbide Schottky Diode Datasheet LSIC2SD170B10 1700 V, 10 A SiC Schottky Barrier Diode Product Summary Characteristic Value VRRM Unit 1700 V 35 °C) 15 A QC (VR: 0-800 V) 74 nC IF (TC Features • Positive temperature coefficient for safe operation and ease of paralleling • 175 °C maximum operating junction temperature • Excellent surge capability • Extremely fast, temperature-independent switching behavior • Dramatically reduced switching losses compared to Si bipolar diodes • Zero reverse recovery current Agency Approvals and Environmental Environmental Approvals Applications Pinout Diagram • Boost diodes in PFC or DC/DC stages • Switch-mode power supplies • Solar inverters • Uninterruptable power supplies • Industrial motor drives • Battery chargers • High speed rectifier 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8/24/2020 LSIC2SD170B10 Silicon Carbide Schottky Diode Datasheet 1. Maximum Ratings ...........................................................................................................................................3 2. Thermal Characteristics ..................................................................................................................................3 3. Electrical Characteristics .................................................................................................................................3 4. Performance Curves .......................................................................................................................................4 5. VF Model for Simulation ..................................................................................................................................5 6. Package Dimensions ......................................................................................................................................6 7. Part Numbering and Marking ..........................................................................................................................7 8. Packing Options ..............................................................................................................................................7 9. Packing Specifications ....................................................................................................................................7 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Revised: 8/24/2020 LSIC2SD170B10 Silicon Carbide Schottky Diode Datasheet 1. Maximum Ratings Characteristic Symbol Conditions Value Unit VRRM - 1700 V VR - 1700 V TC = 25 °C 31 TC = 135 °C 15 TC = 155 °C 10 TC = 25 °C, tp = 10 ms, Half sine pulse 72 A TC = 25 °C, tp = 10 ms, Half sine pulse 26 A2s TC = 25 °C 176 TC = 110 °C 76 Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current IF Non-repetitive Forward Surge Current IFSM I2t I2dt Power Dissipation PTot Operating Junction Temperature A W TJ - -55 to 175 °C Storage Temperature TSTG - -55 to 150 °C Mounting Torque MD M3 or 6-32 screw 0.6 Nm 2. Thermal Characteristics Characteristic Symbol Value Unit RthJC, max 0.85 °C/W Thermal Resistance 3. Electrical Characteristics Characteristic Forward Voltage Symbol VF Reverse Current IR Total Capacitance C Total Capacitive Charge QC Capacitive Stored Energy EC Value Conditions Min Typ Max IF = 10 A, TC = 25 °C - 1.5 1.8 IF = 10 A, TC = 175 °C - 2.2 - VR = 1700 V, TC = 25 °C -