LSIC2SD170B50
Silicon Carbide Schottky Diode Datasheet
LSIC2SD170B50
1700 V, 50 A SiC Schottky Barrier Diode
Product Summary
Characteristic
Value
VRRM
Unit
1700
V
35 °C)
65
A
QC (VR: 0-800 V)
353
nC
IF (TC
Features
• Positive temperature coefficient for safe
operation and ease of paralleling
• 175 °C maximum operating junction temperature
• Excellent surge capability
• Extremely fast, temperature-independent
switching behavior
• Dramatically reduced switching losses compared
to Si bipolar diodes
• Zero reverse recovery current
Agency Approvals and Environmental
Environmental Approvals
Applications
Pinout Diagram
• Boost diodes in PFC or DC/DC stages
• Switch-mode power supplies
• Solar inverters
• Uninterruptable power supplies
• Industrial motor drives
• Battery Chargers
• High speed rectifier
1
Specifications are subject to change without notice.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2020 Littelfuse, Inc.
Revised: 8/24/2020
LSIC2SD170B50
Silicon Carbide Schottky Diode Datasheet
1. Maximum Ratings ...........................................................................................................................................3
2. Thermal Characteristics ..................................................................................................................................3
3. Electrical Characteristics .................................................................................................................................3
4. Performance Curves .......................................................................................................................................4
5. VF Model for Simulation ..................................................................................................................................5
6. Package Dimensions ......................................................................................................................................6
7. Part Numbering and Marking ..........................................................................................................................7
8. Packing Options ..............................................................................................................................................7
9. Packing Specifications ....................................................................................................................................7
2
Specifications are subject to change without notice.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2020 Littelfuse, Inc.
Revised: 8/24/2020
LSIC2SD170B50
Silicon Carbide Schottky Diode Datasheet
1. Maximum Ratings
Characteristic
Symbol
Conditions
Value
Unit
VRRM
-
1700
V
VR
-
1700
V
TC = 25 °C
135
TC = 135 °C
65
TC = 150 °C
50
TC = 25 °C, tp = 10 ms, Half sine pulse
280
A
TC = 25 °C, tp = 10 ms, Half sine pulse
390
A2s
TC = 25 °C
650
TC = 110 °C
280
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
IF
Non-repetitive Forward Surge Current
IFSM
I2t
I2dt
Power Dissipation
PTot
Operating Junction Temperature
A
W
TJ
-
-55 to 175
°C
Storage Temperature
TSTG
-
-55 to 150
°C
Mounting Torque
MD
M3 or 6-32 screw
0.6
Nm
2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
RthJC, max
0.23
°C/W
Thermal Resistance
3. Electrical Characteristics
Characteristic
Forward Voltage
Symbol
VF
Reverse Current
IR
Total Capacitance
C
Total Capacitive Charge
QC
Capacitive Stored Energy
EC
Value
Conditions
Min
Typ
Max
IF = 50 A, TC = 25 °C
-
1.5
1.8
IF = 50 A, TC = 175 °C
-
2.2
-
VR = 1700 V, TC = 25 °C
-
5
100
VR = 1700 V, TC = 175 °C
-
100
-
Unit
V
µA
VR = 1 V, f = 1 MHz
-
3900
-
VR = 400 V, f = 1 MHz
-
334
-
VR = 800 V, f = 1 MHz
-
240
-
-
353
-
nC
-
77
-
µJ
VR = 800 V, QC =
VR = 800 V
3
pF
Specifications are subject to change without notice.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2020 Littelfuse, Inc.
Revised: 8/24/2020
LSIC2SD170B50
Silicon Carbide Schottky Diode Datasheet
4. Performance Curves
Figure 1. Typical Forward Characteristics
Figure 2. Typical Reverse Characteristics
100
1E-3
-55 °C
80
70
Reverse Current, IR (A)
Forward Current, IF (A)
90
175 °C
TJ = 25 °C
60
50
150 °C
40
125 °C
30
20
1E-4
1E-5
1E-6
175 °C
125 °C
150 °C
10
TJ = 25 °C
0
1E-7
0
0.5
1
1.5
2
2.5
3
3.5
4
200
400
Forward Voltage, VF (V)
Figure 3. Power Derating
1000
1200
1400
1600
500
10% Duty
30% Duty
50% Duty
70% Duty
DC
450
600
Forward Current, IF (A)
Power Dissipation, PD (W)
800
Figure 4. Current Derating
700
500
400
300
200
100
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figure 5. Capacitance vs. Reverse Voltage
Figure 6. Capacitive Charge vs. Reverse Voltage
450
4000
400
Capacitive Charge, QC (nC)
4500
3500
Capacitance, C (pF)
600
Reverse Voltage, VRRM (V)
3000
2500
2000
1500
1000
500
350
300
250
200
150
100
50
(f = 1 MHz)
0
1
0
10
100
1000
0
Reverse Voltage, VRRM (V)
200
400
600
800
1000
Reverse Voltage, VRRM (V)
4
Specifications are subject to change without notice.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2020 Littelfuse, Inc.
Revised: 8/24/2020
LSIC2SD170B50
Silicon Carbide Schottky Diode Datasheet
Figure 7. Stored Energy vs. Reverse Voltage
Figure 8. Transient Thermal Impedance
1E+0
Thermal Impedance, Zth,JC (°C/W)
120
Stored Energy, EC (µJ)
100
80
60
40
20
0
0
200
400
600
800
1E-1
1E-2
0.1
0.05
0.02
0.01
1E-3
1E-4
Single Pulse
1E-5
1E-6
1000
Duty = 0.5
0.3
1E-5
1E-4
Reverse Voltage, VRRM (V)
1E-3
1E-2
1E-1
1E+0
Pulse Width (s)
5. VF Model for Simulation
𝑉𝐹 (𝑇𝐽 ) = 𝑉0 + 𝐼𝑅0
𝑉0 = −1.15 × 10−3 ∙ 𝑇𝐽 + 9.90 × 10−1
𝑅0 = 3.25 × 10−7 ∙ 𝑇𝐽2 + 4.62 × 10−5 ∙ 𝑇𝐽 + 1.01 × 10−2
Notes:
- TJ is junction temperature in °C
- Range valid from 25 °C to 175 °C
- Model represents performance of a typical part
5
Specifications are subject to change without notice.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2020 Littelfuse, Inc.
Revised: 8/24/2020
LSIC2SD170B50
Silicon Carbide Schottky Diode Datasheet
6. Package Dimensions
Symbol
Millimeters
Min
Nom
Max
A
4.7
-
5.31
A1
2.21
-
2.59
A2
1.5
-
2.49
b
0.99
-
1.4
b2
1.65
-
2.39
c
0.38
-
0.89
D
20.8
-
21.46
D1
13.08
-
-
D2
0.51
-
1.35
e
5.44 BSC
E
15.49
-
E1
13.46
-
E2
3.43
-
3.99
L
19.81
-
20.32
-
4.5
L1
øP
3.56
-
3.66
øP1
7.06
-
7.39
Q
5.38
S
W
Recommended Hole Pattern Layout:
16.26
6.2
6.17 BSC
0.15
Notes:
1. Dimensions are in millimeters
2. Dimension D, E do not include mold flash.
Mold flash shall not exceed 0.127 mm per
side measured at outer most extreme of
plastic body.
3. øP to have a maximum draft angle of 38.1
mm to the top of the part with a maximum
hole diameter of 3.912 mm.
6
Specifications are subject to change without notice.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2020 Littelfuse, Inc.
Revised: 8/24/2020
LSIC2SD170B50
Silicon Carbide Schottky Diode Datasheet
7. Part Numbering and Marking
SiC
= SiC
2
= Gen 2
SD
= Schottky Barrier Diode
170
= Voltage Rating (1700 V)
B
= Package (TO-247-2L)
50
= Current Rating (50 A)
YY
= Year
WW
= Week
D
= Special Code
ZZZZZZ-ZZ
= Lot Number
8. Packing Options
Part Number
Marking
LSIC2SD170B50
SIC2SD170B50
Packing
Mode
Tube
(30 pcs)
M.O.Q.
30 pcs
9. Packing Specifications
For additional information please visit www.Littelfuse.com/powersemi
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the product may result in personal injury, death, or property damage) other than those expressly forth in applicable Littelfuse product documentation. Littelfuse shall not be liable for
any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics
7
Specifications are subject to change without notice.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2020 Littelfuse, Inc.
Revised: 8/24/2020