Thyristors Datasheet
MAC12HCDG, MAC12HCMG, MAC12HCNG
Surface Mount – 400V - 800V
RoHS
Pb
Description
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever fullwave,
silicon gate−controlled devices are needed.
Features
■ Uniform Gate Trigger Currents
in Three Quadrants, Q1, Q2,
and Q3
■ High Commutating di/dt and
High Immunity to
Additional Information
■ High Surge Current Capability
− 100 Amperes
■ Industry Standard TO-220AB
Package for Ease of Design
■ dv/dt @ 125°C
■ Glass Passivated Junctions
for Reliability and Uniformity
■ Minimizes Snubber Networks
for Protection
■ These Devices are Pb−Free
and are RoHS Compliant
■ Blocking Voltage to 800 Volts
■ On-State Current Rating of 12
Amperes RMS at 80°C
Resources
Accessories
Functional Diagram
Samples
Pin Out
MT 2
MT 1
G
CASE 221A
STYLE 4
1
2
1
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/10/21
Thyristors Datasheet
MAC12HCDG, MAC12HCMG, MAC12HCNG
Surface Mount – 400V - 800V
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VDRM,
VRRM
400
600
800
V
12
A
MAC12HCDG
MAC12HCMG
MAC12HCNG
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 40° to 125°C)
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT
(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC= 125°C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 ms)
2
It
41
A²sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
PGM
16
W
Average Gate Power (t = 8.3 ms, TC = 80°C)
PG(AV)
0.35
W
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Symbol
Value
Unit
RƟJC
RƟJA
2.2
62.5
°C/W
TL
260
°C
Junction−to−Case (AC)
Junction−to−Ambient
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply
in both directions)
Characteristic
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
Symbol
Min
Typ
Max
IDRM,
IRRM
-
-
0.01
-
-
2.0
Unit
mA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in
both directions)
Characteristic
Peak On−State Voltage (Note 2) (ITM = ±17 A)
Symbol
Min
Max
Unit
VTM
−
1.85
V
10
50
10
50
MT2(+), G(+)
Gate Trigger Current
(Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(−)
IGT
MT2(−), G(−)
Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA))
IH
MT2(+), G(+)
Latching Current
(VD = 12 V, IG = 50 mA)
MT2(+), G(−)
Gate Trigger Voltage
(VD = 12 V, RL = 100 Ω)
IL
10
50
–
60
_
60
_
80
MT2(−), G(−)
_
60
MT2(+), G(+)
0.5
1.5
0.5
1.5
0.5
1.5
MT2(+), G(−)
MT2(−), G(−)
VGT
mA
mA
mA
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different
conditions.
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
2
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/10/21
Thyristors Datasheet
MAC12HCDG, MAC12HCMG, MAC12HCNG
Surface Mount – 400V - 800V
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Rate of Change of Commutating Current See Figure 10.
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, TJ = 125°C,
f = 250 Hz, with Snubber) CL = 10 µF LL = 40 mH
(di/dt)c
15
−
−
A/ms
dV/dt
600
−
−
V/µs
di/dt
−
−
10
A/µs
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 510 Ω, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
+C urrent
V TM
on stat e
I RR M at V RR M
Holding Current
Quadrant Definitions for a Triac
IH
Quadrant 3
Main Terminal 2
MT2 POSITIVE
(Positive Half Cycle)
+
+V oltage
I DR M at V DR M
V TM
MT 1
MT 1
RE F
RE F
( ) MT 2
( ) MT 2
I GT
Q u a dr a n t III
off stat e
Q ua dr a nt I
(+) I GT
GA TE
( ) I GT
GA TE
IH
(+) MT 2
(+) MT 2
Q u a dr a n t II
Quadrant 1
Main Terminal 2 +
+I GT
Q u a dr a n t IV
(+) I GT
GA TE
( ) I GT
GA TE
MT 1
MT 1
RE F
RE F
MT2 NEGA TIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used
3
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/10/21
Thyristors Datasheet
MAC12HCDG, MAC12HCMG, MAC12HCNG
Surface Mount – 400V - 800V
Figure 1. Typical Gate Trigger Current vs Junction
Temperature
Figure 2. Typical Gate Trigger Voltage vs Junction
Temperature
1.20
VGT, GATE TRIGGER VOLTAGE (VOLT)
IGT, GATE TRIGGER CURRENT (mA)
100
Q3
Q2
Q1
10
1.10
Q3
1.00
0.90
Q1
0.80
Q2
0.70
0.60
0.50
0.40
1
TJ , JUNCTION TEMPERA TURE °(C)
TJ , JUNCTION TEMPERA TURE °(C)
Figure 3. Typical Holding Current vs Junction
Temperature
Figure 4. Typical Latching Current vs Junction
Temperature
100
100
LATCHING CURRENT (mA)
HOLDING CURRENT (mA)
MT2 NEGATIVE
MT2 POSITIVE
10
Q2
Q3
Q1
10
1
1
TJ , JUNCTION TEMPERA TURE °(C)
TJ , JUNCTION TEMPERA TURE °(C)
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
4
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/10/21
Thyristors Datasheet
MAC12HCDG, MAC12HCMG, MAC12HCNG
Surface Mount – 400V - 800V
Figure 8. Typical Thermal Response
r(t), TRANSIEN T THERMAL RESIST ANCE
(NORMALIZED)
Figure 7. Typical On-State Characteristics
1
0.1
0.01
0.1
5
1
10
100
t, TIME (ms)
1000
10000
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/10/21
Thyristors Datasheet
MAC12HCDG, MAC12HCMG, MAC12HCNG
Surface Mount – 400V - 800V
Dimensions
Part Marking System
4
SEATING
PLANE
B
F
4
Q
12
C
T
MAC12HCxG
YMAXX
S
A
U
3
1
H
2
3
TO 220AB
CASE 221A
STYLE 12
K
Z
x =D, M, or N
Y =Year
M =Month
A =Assembly Site
XX =Lot Serial Code
G =Pb-Free Package
R
L
V
J
G
D
N
Dim
Inches
Millimeters
Pin Assignment
Min
Max
Min
Max
1
Main Terminal 1
A
0.590
0.620
14.99
15.75
2
Main Terminal 2
B
0.380
0.420
9.65
10.67
3
Gate
C
0.178
0.188
4.52
4.78
4
No Connection
D
0.025
0.035
0.64
0.89
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.41
2.67
Ordering Information
H
0.110
0.130
2.79
3.30
J
0.018
0.024
0.46
0.61
MAC12HCDG
K
0.540
0.575
13.72
14.61
MAC12HCMG
L
0.060
0.075
1.52
1.91
MAC12HCNG
N
0.195
0.205
4.95
5.21
Q
0.105
0.115
2.67
2.92
2.41
R
0.085
0.095
2.16
S
0.045
0.060
1.14
1.52
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
Device
Package
Shipping
TO-220AB
(Pb-Free)
1000 Units / Box
1. Dimensioning and tolerancing per ansi y14.5m, 1982.
2. Controlling dimension: inch.
3. Dimension z defines a zone where all body and lead irregularities are allowed.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
© 2021 Littelfuse, Inc.
6
Specifications are subject to change without notice.
Revised: GD. 02/10/21
