MAC8SNG

MAC8SNG

  • 厂商:

    HAMLIN

  • 封装:

    TO-220-3

  • 描述:

    800V 10MA

  • 数据手册
  • 价格&库存
MAC8SNG 数据手册
Thyristors Datasheet MAC8SDG, MAC8SMG, MAC8SNG Surface Mount – 50V RoHS Pb Description Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. The MAC8SxG is designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. Features ■ Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits ■ Uniform Gate Trigger Currents in Three Quadrants; Q1, Q2, and Q3 Additional Information ■ High Immunity to dv/dt − 25 V/µs Minimum at 110°C ■ High Commutating di/dt − 8.0 A/ms Minimum at 110°C ■ On−State Current Rating of 8 Amperes RMS at 70°C ■ High Surge Current Capability − 70 Amperes ■ Blocking Voltage to 800 Volts ■ Rugged, Economical TO−220 Package ■ These Devices are Pb−Free and are RoHS Compliant ■ Maximum Values of IGT, VGT and IH Specified for Ease of Design Resources Accessories Samples Functional Diagram MT 2 MT 1 G Pin Out CASE 221A STYLE 4 1 1 2 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 Thyristors Datasheet MAC8SDG, MAC8SMG, MAC8SNG Surface Mount – 50V Maximum Ratings (TJ = 25°C unless otherwise noted) Rating MAC8SDG MAC8SMG MAC8SNG Peak Repetitive Off-State Voltage (Note 1) (Gate Open, Sine Wave 50 to 60 Hz, TJ = 25° to 110°C) On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 70°C) Symbol Value Unit VDRM, VRRM 400 600 800 V IT 8.0 A (RMS) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ= 110°C) ITSM 70 A Circuit Fusing Consideration (t = 8.3 ms) 2 It 20 A²sec Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 70°C) PGM 16 W Average Gate Power (t = 8.3 ms, TC = 70°C) PG(AV) 0.35 W Operating Junction Temperature Range TJ -40 to +110 °C Storage Temperature Range Tstg -40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit RƟJC RƟJA 2.2 62.5 °C/W TL 260 °C Junction−to−Case (AC) Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions) Characteristic Peak Repetitive Blocking Current (VD = VDRM = VRRM; Gate Open) TJ = 25°C TJ = 110°C Symbol Min Typ Max IDRM, IRRM - - 0.01 - - 2.0 Unit mA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Peak On−State Voltage (Note 4) (ITM = ±11 A) Symbol Min VTM MT2(+), G(+) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(−) IGT MT2(−), G(−) Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA)) IH MT2(+), G(+) Latching Current (VD = 24 V, IG = 5 mA) MT2(+), G(−) IL MT2(−), G(−) MT2(+), G(+) Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) MT2(+), G(−) MT2(−), G(−) VGT Typ Max Unit − − 1.85 V − 2.0 5.0 − 3.0 5.0 − 3.0 5.0 – 3.0 10 _ 5.0 15 _ 10 20 _ 5.0 15 0.45 0.62 1.5 0.45 0.60 1.5 0.45 0.65 1.5 mA mA mA V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 2 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 Thyristors Datasheet MAC8SDG, MAC8SMG, MAC8SNG Surface Mount – 50V Dynamic Characteristics Characteristic Rate of Change of Commutating Current See Figure 10. (VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/µs,Gate Open, TJ = 110°C, f = 500 Hz, Snubber), CS= 0.01 µF, RS =15 Ω Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 510 Ω, TJ = 110°C) Symbol Min Typ Max Unit di/dt(C) 8.0 10 − A/ms dV/dt 25 75 − V/µs Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH +C urrent V TM on stat e I RR M at V RR M IH Holding Current Quadrant 3 Main Terminal 2 Quadrant 1 Main Terminal 2 + IH off stat e +V oltage I DR M at V DR M V TM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT 2 (+) MT 2 Q u a dr a n t II Q ua dr a nt I (+) I GT GA TE ( ) I GT GA TE MT 1 MT 1 RE F RE F ( ) MT 2 ( ) MT 2 I GT Q u a dr a n t III +I GT Q u a dr a n t IV (+) I GT GA TE ( ) I GT GA TE MT 1 MT 1 RE F RE F MT2 NEGA TIVE (Negative Half Cycle) All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used 3 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 Thyristors Datasheet MAC8SDG, MAC8SMG, MAC8SNG Surface Mount – 50V Figure 2. Maximum On-State Power Dissipation Figure 3. On−State Characteristics Figure 4.Transient Thermal Response R (t), TRANSIEN T THERMAL RESIST ANCE (NORMALIZED) Figure 1. RMS Current Derating 1 Z JC(t) = R JC(t) r(t) 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 1 104 Figure 6. Typical Latching Current Vs. Junction Temperature Figure 5. Typical Holding Current Vs. Junction Temperature 4 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 Thyristors Datasheet MAC8SDG, MAC8SMG, MAC8SNG Surface Mount – 50V Figure 7. Typical Gate Trigger Current Vs. Junction Temperature Figure 8. Typical Gate Trigger Voltage Vs. Junction Temperature Figure 9. Typical Exponential Static dv/dt Vs. Gate−MT1 Resistance, MT2(+) Figure 10. Typical Exponential Static dv/dt Versus Peak Voltage, MT2(+) 200 TJ = 110°C STATIC dv/dt (V/ S) 180 VPK = 400V 160 140 600V 800V 120 100 80 60 10 00 20 0 30 0 40 0 50 0 60 0 70 0 80 0 RGK, GATE-MT1 RESIST ANCE (OHMS) 90 0 100 Figure 11. Typical Exponential Static dv/dt Vs. Junction Temperature, MT2(+) Figure 12. Typical Exponential Static dv/dt Vs. Peak Voltage, MT2(−) 130 STATIC dv/dt (V/ S) 120 VPK = 400V 110 600V 800V 100 90 R G - MT1 = 510 80 70 100 105 TJ , Junction Temperature(°C ) 110 5 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 Thyristors Datasheet MAC8SDG, MAC8SMG, MAC8SNG Surface Mount – 50V Figure 13. Typical Exponential Static dv/dt Versus Junction Temperature, MT2(−) Figure 14. Typical Exponential Static dv/dt Versus Gate− MT1 Resistance, MT2(−) STATIC dv/dt (V/ S) 350 300 VPK = 400V 250 600V 200 800V 150 R G - MT1 = 510 100 50 100 105 TJ , Junction Temperature °C) ( 110 (dv/dt)c, CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s) Figure 15. Critical Rate of Rise of Commutating Voltage 100 VPK = 400V 90°C 10 100°C f= 1 2 tw tw (di/dt) c= VDRM 6f ITM 1000 110°C 1 15 10 15 20 25 30 (di/dt) c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) LL 200VRMS ADJUST FOR ITM, 60 Hz VAC MEASURE I TRIGGER CHARGE CONTROL TRIGGER CONTROL CHARGE 1N4007 CL + 200V MT2 1N914 51 G MT1 Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information 6 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 Thyristors Datasheet MAC8SDG, MAC8SMG, MAC8SNG Surface Mount – 50V Dimensions Part Marking System 4 SEATING PLANE B F 4 Q 12 C T S MAC8xG YMAXX A U 3 1 H K Z 2 3 x =D, M, or N Y =Year M =Month A =Assembly Site XX =Lot Serial Code G =Pb-Free Package R L V TO 220AB CASE 221A STYLE 12 J G D N Dim Inches Millimeters Pin Assignment Min Max Min Max 1 Main Terminal 1 A 0.590 0.620 14.99 15.75 2 Main Terminal 2 B 0.380 0.420 9.65 10.67 3 Gate C 0.178 0.188 4.52 4.78 4 No Connection D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.41 2.67 Ordering Information H 0.110 0.130 2.79 3.30 J 0.018 0.024 0.46 0.61 MAC8SDG K 0.540 0.575 13.72 14.61 MAC8SMG L 0.060 0.075 1.52 1.91 MAC8SNG N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 2.41 R 0.085 0.095 2.16 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 Device Package Shipping TO-220AB (Pb-Free) 1000 Units / Box 1. Dimensioning and tolerancing per ansi y14.5m, 1982. 2. Controlling dimension: inch. 3. Dimension z defines a zone where all body and lead irregularities are allowed. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 7 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21
MAC8SNG 价格&库存

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MAC8SNG
  •  国内价格 香港价格
  • 1+18.414811+2.37720
  • 10+11.7940510+1.52252
  • 100+8.03154100+1.03681
  • 500+6.41975500+0.82874
  • 1000+5.901521000+0.76184
  • 2000+5.661092000+0.73080

库存:76