Thyristors Datasheet
MAC9DG, MAC9MG, MAC9NG
Surface Mount – 400V - 800V
RoHS
Pb
Description
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are
required. The MAC9xG is designed for high performance full-wave
ac control applications where high noise immunity and high
commutating di/dt are required.
Features
■ Blocking Voltage to 800 Volts
■ On−State Current Rating of
8.0 Amperes RMS at 100°C
■ Uniform Gate Trigger Currents
in Three Quadrants
■ High Immunity to dv/dt − 500
V/µs minimum at 125°C
■ Industry Standard TO−220
Package
■ High Commutating di/dt − 6.5
A/ms minimum at 125°C
■ These Devices are Pb−Free
and are RoHS Compliant
■ Minimizes Snubber Networks
for Protection
Additional Information
Functional Diagram
MT 2
Resources
Accessories
MT 1
G
Samples
Pin Out
CASE 221A
STYLE 4
1
1
2
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/22/21
Thyristors Datasheet
MAC9DG, MAC9MG, MAC9NG
Surface Mount – 400V - 800V
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
MAC9D
MAC9M
MAC9N
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 40° to 125°C)
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100°C)
Symbol
Value
Unit
VDRM,
VRRM
400
600
800
V
IT
8.0
A
(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TJ= 125°C)
ITSM
80
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
26
A²sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
PGM
16
W
Average Gate Power (t = 8.3 ms, TC = 80°C)
PG(AV)
0.35
W
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Junction−to−Case (AC)
Junction−to−Ambient
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Symbol
Value
Unit
RƟJC
RƟJA
2.2
62.5
°C/W
TL
260
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both
directions)
Characteristic
TJ = 25°C
TJ = 125°C
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
Symbol
Min
Typ
Max
IDRM,
IRRM
-
-
0.01
-
-
2.0
Unit
mA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both
directions)
Characteristic
Symbol
Peak On−State Voltage (Note 2) (ITM = ±11 A)
VTM
MT2(+), G(+)
Gate Trigger Current
(Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(−)
IGT
MT2(−), G(−)
Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA))
IH
MT2(+), G(+)
Latching Current
(VD = 24 V, IG = 50 mA)
MT2(+), G(−)
IL
MT2(−), G(−)
MT2(+), G(+)
Gate Trigger Voltage
(VD = 12 V, RL = 100 Ω)
MT2(+), G(−)
VGT
MT2(−), G(−)
MT2(+), G(+)
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 Ω, TJ = 125°C)
MT2(+), G(−)
MT2(−), G(−)
VGD
Min
Typ
Max
Unit
−
1.2
1.6
V
10
16
50
10
18
50
10
22
5.0
–
30
50
_
20
50
_
30
80
_
20
50
0.5
0.69
1.5
0.5
0.77
1.5
0.5
0.72
1.5
0.2
_
_
0.2
_
_
0.2
_
_
mA
mA
mA
V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different
conditions.
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
2
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/22/21
Thyristors Datasheet
MAC9DG, MAC9MG, MAC9NG
Surface Mount – 400V - 800V
Dynamic Characteristics
Characteristic
Rate of Change of Commutating Current See Figure 10.
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, TJ = 125°C, f = 250 Hz,
No Snubber) CL = 10 µF LL = 40 mH
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate open, TJ = 125°C)
Symbol
Min
Max
Unit
di/dt(C)
6.5
−
A/ms
dV/dt
500
−
V/µs
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
+C urrent
V TM
on stat e
Holding Current
I RR M at V RR M
Quadrant Definitions for a Triac
IH
Quadrant 3
Main Terminal 2
MT2 POSITIVE
(Positive Half Cycle)
+
+V oltage
I DR M at V DR M
V TM
MT 1
MT 1
RE F
RE F
( ) MT 2
( ) MT 2
I GT
Q u a dr a n t III
off stat e
Q ua dr a nt I
(+) I GT
GA TE
( ) I GT
GA TE
IH
(+) MT 2
(+) MT 2
Q u a dr a n t II
Quadrant 1
Main Terminal 2 +
+I GT
Q u a dr a n t IV
(+) I GT
GA TE
( ) I GT
GA TE
MT 1
MT 1
RE F
RE F
MT2 NEGA TIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used
3
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/22/21
Thyristors Datasheet
MAC9DG, MAC9MG, MAC9NG
Surface Mount – 400V - 800V
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
125
12
PAV, AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE (C
° )
DC
120
α = 120, 90, 60, 30
°
115
α = 180°
110
DC
105
100
0
1
2
3
4
5
6
7
10
180°
8
6
60°
4
90°
α = 30°
2
0
8
120°
0
1
2
IT(RMS )
3
4
5
6
7
8
IT(RMS )
Figure 3. On−State Characteristics
Figure 4. Thermal Response
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
100
TYPICAL AT
TJ = 25°C
MAXIMUM @ JT= 125°C
10
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
4
1000
Figure 5. Hold Current Variation
40
35
I H, HOLD CURRENT (mA)
IT
MAXIMUM @ JT= 25°C
1
30
MT2 POSITIVE
25
20
15
MT2 NEGATIVE
10
0.1
5
0
0.51
VT
1.52
2.53
3.54
45
.5
4
10
90
TJ , JUNCTION TEMPERA TURE °(C)
0
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/22/21
Thyristors Datasheet
MAC9DG, MAC9MG, MAC9NG
Surface Mount – 400V - 800V
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
VGT, GATE TRIGGER VOLTAGE (VOLT)
IGT, GATE TRIGGER CURRENT (mA)
100
Q2
Q3
Q1
10
1
10
50
90
TJ , JUNCTION TEMPERA TURE °(C)
110
130
Figure 8. Critical Rate of Rise of Off-State
Voltage (Exponential)
Q2
Q3
Q1
70
TJ , JUNCTION TEMPERA TURE °(C)
(V/sµ )
Figure 9. Critical Rate of Rise of CommutatingVoltage
100
(dv/dt)c , CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE(V/s
µ )
5000
4.5K
4K
3.5K
MT2 NEGATIVE
3K
2.5K
2K
1.5K
1K
1
K
MT2 POSITIVE
500
1
10
100
R G, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS)
TJ = 125°C
10
tw
1000
100 °C
f=
75°C
1
2 tw
(di/dt)
c=
VDRM
1
10
6f ITM
1000
15
20
25
30
35
40
45
50
55
60
(di/dt)
c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
LL
200VRMS
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
0
1
0.95
0.9
0.85
0.8
075
0.7
0.65
0.6
0.55
0.5
0.45
0.4
CL
5
+
200V
MT2
1N914 51
G
MT1
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/22/21
Thyristors Datasheet
MAC9DG, MAC9MG, MAC9NG
Surface Mount – 400V - 800V
Dimensions
Part Marking System
4
SEATING
PLANE
B
F
4
Q
12
C
T
S
A
U
3
1
H
2
3
MAC9xG
YMAXX
TO 220AB
CASE 221A
STYLE 12
K
Z
x =D, M, or N
Y =Year
M =Month
A =Assembly Site
XX =Lot Serial Code
G =Pb-Free Package
R
L
V
J
G
D
N
Dim
Inches
Millimeters
Pin Assignment
Min
Max
Min
Max
1
Main Terminal 1
A
0.590
0.620
14.99
15.75
2
Main Terminal 2
B
0.380
0.420
9.65
10.67
3
Gate
C
0.178
0.188
4.52
4.78
4
No Connection
D
0.025
0.035
0.64
0.89
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.41
2.67
Ordering Information
H
0.110
0.130
2.79
3.30
J
0.018
0.024
0.46
0.61
MAC9DG
K
0.540
0.575
13.72
14.61
MAC9MG
L
0.060
0.075
1.52
1.91
MAC9NG
N
0.195
0.205
4.95
5.21
Q
0.105
0.115
2.67
2.92
2.41
R
0.085
0.095
2.16
S
0.045
0.060
1.14
1.52
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
Device
Package
Shipping
TO-220AB
(Pb-Free)
1000 Units / Box
1. Dimensioning and tolerancing per ansi y14.5m, 1982.
2. Controlling dimension: inch.
3. Dimension z defines a zone where all body and lead irregularities are allowed.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
6
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 02/22/21
