MCR08MT1G

Thyristor Datasheet MCR08B, MCR08M Surface Mount – 600V - 800V RoHS Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. Features ■ Sensitive Gate Trigger Current ■ Surface Mount Package ■ Blocking Voltage to 600 V ■ Lead-free and RoHScompliant ■ Glass Passivated Surface for Reliability and Uniformity Functional Diagram G Additional Information A K Pin Out 4 Resources Accessories Samples 1 1 2 3 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: TK. 09/04/21 Thyristor Datasheet MCR08B, MCR08M Surface Mount – 600V - 800V Maximum Ratings (TJ = 25 °C unless otherwise noted) Rating Symbol Value VDRM, VRRM IT (RMS) 200 600 0.8 A ITSM 8.0 A I2t 0.4 A²sec W MCR08B MCR08M Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, RGK=1 kΩ TJ = 25 to 110°C) On-State RMS Current (All Conduction Angles; TC = 80°C) Peak Non-Repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (TC = 80°C, t = 1.0 µs) Unit V PGM 0.1 PGM (AV) 0.01 W Operating Junction Temperature Range TJ -40 to +110 °C Storage Temperature Range Tstg -40 to +150 °C Average Gate Power (t = 8.3 ms, TC = 80°C) Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JJunction−to−Ambient PCB Mounted per Figure 1 RθJA 156 °C/W Thermal Resistance, Junction−to−Tab Measured on Anode Tab Adjacent to Epoxy RθJA 25 °C/W Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions) Characteristic Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM, RGK = 1 kΩ Symbol Min Typ IDRM IRRM - TJ = 25°C TJ = 110°C Max Unit - 10 μA - 200 μA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Peak Forward On-State Voltage (Note 2) (IT = 1.0 A Peak) VTM − − 1.7 V Gate Trigger Current (Continuous dc) (Note 4) (VAK = 12 Vdc, RL = 100 Ω) IGT − − 200 μA mA Holding Current (Note 3) (VAK = 12 Vdc, Initiating Current = 20 mA) Max Unit IH − − 5.0 Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT − − 0.8 V Turn−On Time (VAK = 12 Vdc, ITM = 5 Adc, IGT = 5 mA) tgt − 1.25 − µs 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. RGK = 1000 Q is included in measurement. 4. RGK is not included in measurement. Dynamic Characteristics Characteristic Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110°C, RGK = 1 kΩ, Exponential Method) 2 Symbol Min Typ Max Unit dv/dt 10 − − V/µs © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: TK. 09/04/21 Thyristor Datasheet MCR08B, MCR08M Surface Mount – 600V - 800V Voltage Current Characteristic of SCR +Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current Anode+ VTM on state IRRM at VRRM Forward Blocking Region (Off State) Reverse Avalanche Region Anode- IH +Voltage IDRM at VDRM Forward Blocking Region (Off State) Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 0.15 3.8 0.079 2.0 0.091 0.091 2.3 2.3 0.079 2.0 0.984 25.0 0.059 0.059 1.5 1.5 0.059 1.5 0.096 2.44 0.096 2.44 0.059 1.5 0.244 6.2 inches mm 0.096 2.44 0.059 1.5 0.472 12.0 Board mounted vertically cinch 8840 edge connector. Board Thickness = 65Mil. Foil Thickness = 2.5Mil. Material: G10 Fiberglass Base Epoxy 3 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: TK. 09/04/21 Thyristor Datasheet MCR08B, MCR08M Surface Mount – 600V - 800V Figure 3. Junction to Ambient Thermal Resistance vs Copper Tab Area 10 0.1 0.01 TYPICAL AT TJ = 110 C MAX AT TJ = 110 C MAX AT TJ = 25 C 0 150 140 130 120 110 100 90 80 70 60 50 40 30 RJA, Junction to Ambient Thermal Resistance (°C) 1 1.0 2.0 3.0 4.0 VT, Instantaneous On-state Voltage (V) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 Foil Area (cm2) Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 100 90 110 100 90 80 70 60 50 40 30 20 50 or 60 Hz Halfwave α α = CONDUCTION ANGLE dc 180° 120° α = 30° 60° 0 90° 0.1 0.2 0.3 0.4 IT(AV), Average On-state Current (A) 0.5 80 70 60 50 40 30 20 Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature dc 100 80 60° 70 90° 60 50 120° α = 30° α α = CONDUCTION ANGLE 0 0.1 0.2 0.3 0.4 IT(AV), Average On-state Current (A) 1.0 cm2 Foil, 50 or 60 Hz Halfwave 180° 120° α = 30° 60° 90° α α = CONDUCTION ANGLE 0 0.1 0.2 0.3 0.4 IT(AV), Average On-state Current (A) 110 Pad Area = 4.0 cm2 50 or 60 Hz Halfwave 180° 90 dc 0.5 Figure 7. Current Derating Reference: Anode Tab TA, Maximum Allowable Ambient Temperature (°C) 110 TA, Maximum Allowable Ambient Temperature (°C) 0 Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature TA, Maximum Allowable Ambient Temperature (°C) TA, Maximum Allowable Ambient Temperature (°C) IT, Instantaneous On-state Current (A) Figure 2. On-State Characteristics 4 50 or 60 Hz Halfwave 180° 120°  = 30° 60° α 90° = CONDUCTION 85 0.5 dc ANGLE 0 0.1 0.2 0.3 0.4 IT(AV), Average On-state Current (A) 0.5 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: TK. 09/04/21 Thyristor Datasheet MCR08B, MCR08M Surface Mount – 600V - 800V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board 1.0  = CONDUCTION ANGLE  = 30° rT, Normalized Transient Thermal Resistance P(AV), Maximum Average Power Dissipatiion (W) Figure 8. Power Dissipation 60° 90° dc 180° 120° 0 0.1 0.2 0.3 0.4 IT(AV), Average On-state Current (A) 0.01 0.0001 0.5 0.7 VAK = 12 V R L = 100  0.5 0.4 0.3 -40 -20 0 20 40 60 80 TJ, Junction Temperature (oC) 110 Figure 12. Typical Range of VGT versus Measured IGT 0 10 100 2.0 VAK = 12 V RL = 3.0 k 1.0 0 -40 -20 0 20 40 60 80 TJ, Junction Temperature (oC) 110 1000 IGT, Gate Trigger Current (µA) VGT, Gate Trigger Voltage (V) 0.011 0.1 t, Time (Seconds) Figure 13. Typical Gate Trigger Current vs Junction Temperature 0.7 0.65 0.6 0.55 0.5 VAK = 12 V R L = 100  TJ = 25C 0.45 0.4 0.35 0.3 0.001 Figure 11. Typical Normalized Holding Current vs Junction Temperature IH, Holding Current (Normalized) VGT, Gate Trigger Voltage (V) Figure 10. Typical Gate Trigger Voltage vs Junction Temperature 0.6 0.1 0.1 1.0 10 100 IGT, Gate Trigger Current (µA) 1000 5 RGK = 1000  Resistor Current Included 100 Without Gate Resistor 1.0 -40 -20 VAK = 12 V RL = 100  0 20 40 60 80 TJ, Junction Temperature (oC) 110 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: TK. 09/04/21 Thyristor Datasheet MCR08B, MCR08M Surface Mount – 600V - 800V Figure 15. Exponential Static dv/dt vs. Junction Temperature and GateCathode Termination Resistance Figure 14. Holding Current Range vs Gate-Cathode Resistance 10000 5000 TJ = 25C 10 Static dv/dt (V/µs) IH, Holding Current (mA) 100 IGT = 48 A IGT = 7 A 1.0 0.1 1.0 500 100 V 50 V 50 500 V 10 75° 100 1000 10000 100000 TJ = 110°C 400 V (PEAK) 1000 400 V 100 110° 10000 TJ = 110°C 200 V 50° Figure 17. Exponential Static dv/dt vs Gate-Cathode Capacitance and Resistance Static dv/dt (V/µs) Static dv/dt (V/µs) 1000 125° RGK, Gate-Cathode Resistance (Ohms) Figure 16. Exponential Static dv/dt vs Peak Voltage and Gate-Cathode Termination Resistance 300 V TJ = 25° 0.5 0.1 10 10 100 1000 10000 100000 RGK, Gate-Cathode Resistance (Ohms) 10000 Vpk = 400 V 1000 500 100 50 10 5.0 1.0 5.0 500 100 R GK = 100 50 10 R GK = 1.0 k 5.0 1.0 10 100 1000 1.0 10000 RGK, Gate-Cathode Resistance (Ohms) R GK = 10 k 0.01 0.1 1.0 10 CGK, Gate-Cathode Capacitance (nF) 100 Figure 18. Exponential Static dv/dt vs Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity 10000 Static dv/dt (V/µs) 1000 500 100 50 10 IGT = 70 A IGT = 5 A IGT = 35 A 5.0 1.0 10 IGT = 15 A 100 1000 10000 100000 RGK, Gate-Cathode Resistance (Ohms) 6 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: TK. 09/04/21 Thyristor Datasheet MCR08B, MCR08M Surface Mount – 600V - 800V Dimensions Soldering Footprint 3. 8 0.15 D b1 2. 0 0.079 4 HE 12 E 3 2. 3 0.091 b e1 e C 2. 0 0.079 A 0.08 (0003 ) Dim A A1 b b1 c D E e e1 L1 HE 9 A1 L1 Millimeters 1. 5 0.059 Inches Min Nom Max Min Nom Max 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° 1.63 0.06 0.75 3.06 0.29 6.50 3.50 2.30 0.94 1.75 7.00 − 1.75 0.10 0.89 3.20 0.35 6.70 3.70 2.40 1.05 2.00 7.30 10° 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° MCR08BT1G MCR08MT1G SOT-223 (Pb-Free) SOT-223 (Pb-Free) mm inches 4 SOT-223 CR08x YMAXX 1 1 CR08x = x= Y= M= A= XX = Ordering Information Package SCALE 6 :1 Part Marking System 1. Dimensions and Tolerancing per Ansi Y14.5M. 1982. 2. Controlling Dimension: Inch. Device 6. 3 0.248 2. 3 0.091 Device Code B or M Year Month Assembly Location Series Number Pin Assignment 1 2 3 4 Shipping 1000/Tape & Reel Cathode Anode Gate Anode 1000/Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics 7 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: TK. 09/04/21