Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
MCR12DCM, MCR12DCN
Pb
Description
This thyristor is designed primarily for half-wave ac control
applications, such as motor controls, heating controls,
and power supplies; or wherever half−wave, silicon gate−
controlled devices are needed.
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Epoxy Meets rating UL Recognized compound meets
flammability rating V-0.
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• Pb−Free Packages are Available
Pin Out
Functional Diagram
4
1
2
3
G
A
K
Additional Information
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(− 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
Symbol
Value
MCR12DCM
VDRM
600
MCR12DCN
VRRM
800
On-State RMS Current
(180º Conduction Angles; TC = 90°C)
IT
(RMS)
Unit
V
12
A
Average On−State Current
(180º Conduction Angles; TC = 90°C)
IT(AV)
7.8
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
41
A²sec
PGM
5.0
W
PGM (AV)
0.5
W
IGM
2.0
A
Operating Junction Temperature Range
TJ
-40 to 125
°C
Storage Temperature Range
Tstg
-40 to 150
°C
Forward Peak Gate Power
(Pulse Width ≤ 10 µsec,TC = 90°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µsec, TC= 90°C)
Maximum ratings are those values beyond which component damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating
conditions) and are not valid simultaneously. If these limits are exceeded, component functional operation is not implied, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Symbol
Value
Thermal Resistance, Junction−to−Case
RƟJC
2.2
Thermal Resistance, Junction−to−Ambient
RƟJA
88
Thermal Resistance, Junction−to−Ambient (Note 2)
RƟJA
80
TL
260
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for
10 Seconds
Unit
°C/W
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Characteristic
Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM
or VRRM Gate Open)
Symbol
Min
Typ
Max
IDRM
IRRM
-
-
0.01
-
-
5.0
TJ = 25°C
TJ = 125°C
Unit
mA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Peak Forward On−State Voltage (Note 2) (ITM = 16 A)
TJ = 25°C
Gate Trigger Current (Continuous dc)
(VD = 12 V; RL = 100 Ω)
TJ = −40°C
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
TJ = −40°C
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 Ω)
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current
(VD = 12 V, IG = 20 µA, TJ = 25°C)
(VD = 12 V, IG = 40 µA, TJ = -40°C)
TJ = 25°C
TJ = 125ºC
TJ = 25°C
TJ = −40°C
Symbol
Min
Typ
Max
Unit
VTM
_
1.3
1.9
V
2.0
7.0
20
_
_
40
0.5
0.65
1.0
_
_
2.5
0.2
_
_
4.0
22
40
_
_
80
4.0
22
40
_
_
80
IGT
VGT
VGD
IH
IL
mA
V
V
mA
mA
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
Dynamic Characteristics
Characteristic
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM Exponential Waveform, Gate Open, TJ = 125ºC)
Symbol
Min
Typ
Max
Unit
dv/dt
50
200
−
V/µs
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8" from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
+Current
Anode +
VTM
on state
IRRM at VRRM
IH
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
Anode
Figure 1. Average RMS Current Derating
Figure 2. On−State Power Dissipation
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
r(t), TRANSIEN T RESIST ANCE
(NORMALIZED)
1.0
0.1
Z JC(t) = R JC(t) r(t)
0.01
0.1
10
1.0
100
1000
10 K
t, TIME (ms)
Figure 5. Typical Gate Trigger Current vs Junction Temperature
Figure 6. Typical Gate Trigger Voltage vs Junction Temperature
100
IL, LATCHING CURRENT (V)
IH , HOLDING CURRENT (mA)
100
10
1.0
65
110
10
1.0
125
(°C)
TJ , JUNCTION TEMPER ATURE ((°C)
°)C
Figure 7. Typical Holding Current vs Junction Temperature
35
65
80
110
125
TJ , JUNCTION TEMPERA TURE (°C)
Figure 9. Exponential Static dv/dt vs
Gate−Cathode Resistance
1000
STATIC dv/dt (V/ s)
(V)
VD = 800V
TJ = 125°C
100
100
10
10001
0K
R GK
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
Part Marking System
Dimensions
A
E
b3
B
C
4
c2
4
L3
D
12
L4
A
DETAIL A
3
NOTE 7
b2
e
b
c
SIDE VIEW
0.005 (0.13)
TOP VIEW
Z
H
M
GAUGE
PLANE
L
L1
DETAIL A
YWW
R1
2DCxG
C
Z
C
3
BOTTOM VIEW
H
L2
1 2
Z
Y=
WW
R12DCx
SEATING
PLANE
BOTTOM VIEW
A1
DPAK
CASE 369C
STYLE 4
Y ear
= Work Week
= Device Code
x= M or N
ALTERNATE
CONSTRUCTIONS
ROTATED 90 CW
Inches
Pin Assignment
Millimeters
Dim
Min
Max
Min
Max
A
0.087
0.094
2.20
2.40
A1
0.000
0.005
0.00
0.12
b
0.022
0.030
0.55
0.75
b2
0.026
0.033
0.65
0.85
b3
0.209
0.217
5.30
5.50
c
0.019
0.023
0.49
0.59
c2
0.019
0.023
0.49
0.59
D
0.213
0.224
5.40
5.70
E
0.252
0.260
6.40
e
0.091
Anode
3
Gate
4
Anode
Ordering Information
0.374
0.406
9.50
10.30
L
0.058
0.070
1.47
1.78
0.114
Cathode
2
6.60
2.30
H
L1
1
2.90
L2
0.019
0.023
0.49
0.59
L3
0.053
0.065
1.35
1.65
L4
0.028
0.039
0.70
1.00
Z
0.154
-
3.90
-
Device
Package
MCR12DCMT4
DPAK
MCR12DCMT4G
DPAK
(Pb−Free)
MCR12DCNT4
TO−220AB
MCR12DCNT4G
TO−220AB
(Pb−Free)
Shipping
2500 /
Tape & Reel
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
