MCR12DG

MCR12DG

  • 厂商:

    HAMLIN

  • 封装:

    TO-220-3

  • 描述:

    THYRISTOR SCR 12A 400V TO220AB

  • 数据手册
  • 价格&库存
MCR12DG 数据手册
Thyristors Datasheet MCR12DG, MCR12MG, MCR12NG Silicon Controlled Rectifiers — ­ 400V - 800V Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features ■ Blocking Voltage to 800 Volts ■ On−State Current Rating of 12 Amperes RMS at 80°C ■ High Surge Current Capability − 100 Amperes ■ Rugged, Economical TO−220AB Package Additional Information ■ Minimum and Maximum Values of IGT, VGT an IH Specified for Ease of Design ■ High Immunity to dv/dt − 100 V/μsec Minimum at 125°C ■ These are Pb−Free devices ■ Glass Passivated Junctions for Reliability and Uniformity Pin Out Resources Accessories Samples Functional Diagram CASE 221A STYLE 4 1 1 2 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21 Thyristors Datasheet MCR12DG, MCR12MG, MCR12NG Silicon Controlled Rectifiers — ­ 400V - 800V Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Part Number Symbol Value Unit VDRM, VRRM 400 600 800 V 12 A MCR12DG MCR12MG MCR12NG Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) On-State RMS Current (180° Conduction Angles; TC = 80°C) IT (RMS) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A Circuit Fusing Consideration (t = 8.3 ms) I2t 41 A2sec PGM 5.0 W Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PG (AV) 0.5 W Average On-State Current (180° Conduction Angles; TC = 80°C) IT(AV) 7.8 A Forward Peak Gate Current (Pulse Width ≤ 1.0 s, TC = 90°C) IGM 2.0 A Operating Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range Tstg -40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit RƟJC RƟJA 2.2 62.5 °C/W TL 260 °C Junction−to−Case (AC) Junction−to−Ambient Thermal Resistance, Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted) Characteristic Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM and VRRM; Gate Open) TJ = 25°C TJ = 125°C Symbol Min Typ Max IDRM, IRRM - - 0.01 - - 2.0 Min Typ Max Unit mA Electrical Characteristics - ON Characteristic Symbol Unit Peak Forward On−State Voltage (Note 2) (ITM = 24 A) VTM − – 2.2 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 2.0 8.0 20 mA Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) IH 4.0 20 40 mA IL 6.0 25 60 mA VGT 0.5 0.65 1.0 V Latch Current (VD = 12 V, IG = 20 mA) Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ω) Dynamic Characteristics Characteristic Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) Repetitive Critical Rate of Rise of On−State Current IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA Symbol Min Typ Max Unit dv/dt 100 250 − V/µs di/dt – – 50 A/µs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 2 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21 Thyristors Datasheet MCR12DG, MCR12MG, MCR12NG Silicon Controlled Rectifiers — ­ 400V - 800V Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current Figure 1. Typical RMS Current Derating Figure 2. On-State Power Dissipation Figure 3. Typical On−State Characteristics Figure 4. Typical Gate Trigger Current vs Junction Temp 3 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21 Thyristors Datasheet MCR12DG, MCR12MG, MCR12NG Silicon Controlled Rectifiers — ­ 400V - 800V Figure 5. Typical Holding Current vs Junction Temp Figure 6. Typical Gate Trigger Voltage vs Junction Temp Figure 7. Typical Latching Current vs Junction Temp 4 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21 Thyristors Datasheet MCR12DG, MCR12MG, MCR12NG Silicon Controlled Rectifiers — ­ 400V - 800V Dimensions Part Marking System 4 SEATING PLANE 4 12 TO-220AM 3 1 2 3 x Y M A AKA G Inches Dim Millimeters YMAXX MCR12xG AKA =D, M, or N =Year =Month =Assembly Site =Diode Polarity =Pb-Free Package Pin Assignment Min Max Min Max 1 Cathode A 0.590 0.620 14.99 15.75 2 Anode B 0.380 0.420 9.65 10.67 3 Gate C 0.178 0.188 4.52 4.78 4 Anode D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 J 0.018 0.024 0.46 0.61 K 0.540 0.575 13.72 14.61 L 0.060 0.075 1.52 1.91 N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 Ordering Information Device MCR12DG MCR12MG MCR12NG Package Shipping TO-220AB (Pb-Free) 1000 Units / Box 1. Dimensioning and tolerancing per ansi y14.5m, 1982. 2. Controlling dimension: inch. 3. Dimension z defines a zone where all body and lead irregularities are allowed. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 5 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/24/21
MCR12DG 价格&库存

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MCR12DG
  •  国内价格
  • 1+8.43985
  • 10+6.55522
  • 24+4.83448
  • 65+4.57227
  • 1000+4.40019

库存:547