MCR218-4G

MCR218-4G

  • 厂商:

    HAMLIN

  • 封装:

    TO-220-3

  • 描述:

    MCR218-4G

  • 数据手册
  • 价格&库存
MCR218-4G 数据手册
Thyristors Surface Mount – 50V - 400V > MCR218-2G, MCR218-4G, MCR218-6G MCR218-2G, MCR218-4G, MCR218-6G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Features • Glass-Passivated Junctions • Blocking Voltage to 400 Volts • TO-220 Construction − Low Thermal Resistance, High Heat Dissipation and Durability Functional Diagram Pin Out CASE 221A STYLE 4 1 Additional Information 2 Datasheet Resources Samples © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 Thyristors Surface Mount – 50V - 400V > MCR218-2G, MCR218-4G, MCR218-6G Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDRM, VRRM 50 V ITM (RMS) 12 A Peak Discharge Current (Note 2) ITM 300 A Average On-State Current (180º Conduction Angles; TC = 85ºC) IT(AV) 8.0 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A Peak Repetitive Off−State Voltage (Note 1) (− 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR68-2 On-State RMS Current (180º Conduction Angles; TC = 85ºC) Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A²sec Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 80°C) IGM 2.0 A W Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 85°C) IGM 20 PG(AV) 0.5 W Operating Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range Tstg -40 to +150 °C − 8.0 in. lb. Forward Average Gate Power (t = 8.3 ms, TC = 85ºC) Mounting Torque Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. Thermal Characteristics Rating Symbol Value Unit RƟJC RƟJA 2.0 60 °C/W TL 260 °C Junction−to−Case (AC) Junction−to−Ambient Thermal Resistance, Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted) Characteristic Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM and VRRM; Gate Open) Symbol Min Typ Max IDRM, IRRM - - 10 - - 2.0 TJ = 25°C TJ = 125°C Unit mA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted) Characteristic Peak Forward On−State Voltage (Note 2) (ITM = 32 A)(ITM = 24 A) (Note 3) (ITM = 300 A, tw = 1 ms) (Note 4) Symbol Min Typ Max Unit VTM _ _ _ 6.0 2.2 _ V Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω) IGT 2.0 7.0 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL = 100 Ω) VGT _ 0.65 1.5 V Gate Trigger Non-Current (Continuous dc) (VD = 12 V; RL = 100 Ω) VGD 0.2 0.40 _ V Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open)) IH 3.0 15 50 mA Latch Current (VD = 12 V, IG = 30 mA) IL _ 35 80 mA VGT _ 1.0 _ µs Gate Controlled Turn-On Time (Note 5) (VD = Rated VDRM, IG = 150 mA) (ITM = 24 A Peak) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 Thyristors Surface Mount – 50V - 400V > MCR218-2G, MCR218-4G, MCR218-6G Dynamic Characteristics Symbol Min Typ Max Unit Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125ºC) Characteristic dv/dt 10 − − V/µs Critical Rate of Rise of On−State Current TJ = 125ºC IG = 150 A di/dt − − 75 A/µs 3. Pulse duration ≤ 300 µs, duty cycle ≤ 2%. 4. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 5. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. Voltage Current Characteristic of SCR Symbol VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH +Current Parameter Holding Current VTM On State IRRM at VRRM IH Quadrant 3 Main Terminal 2- Quadrant 1 Main Terminal 2+ IH Off State +Voltage IDRM at VDRM VTM © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 Thyristors Surface Mount – 50V - 400V > MCR218-2G, MCR218-4G, MCR218-6G Figure 1. Current Derating Figure 2. On−State Power Dissipation ° 125 115 α α = CONDUCTION ANGLE 105 95 dc 85 TC 75 α = 30° 60° 90° 120° 180° 0 IT(AV) Figure 3. Typical Gate Trigger Current vsTemperature Figure 4. Typical Gate Trigger Voltage vs Temperature Figure 5. Typical Holding Current vs Temperature © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 Thyristors Surface Mount – 50V - 400V > MCR218-2G, MCR218-4G, MCR218-6G Dimensions Part Marking System 4 SEATING PLANE 4 12 1 2 3 MCR218x x Y M A AKA G Inches Dim YMAXX MCR218x-G AKA TO-220AM Case 221A Style 12 3 Millimeters =Device Code =2, 4, or 6 =Year =Month =Assembly Site =Diode Polarity =Pb-Free Package Pin Assignment Min Max Min Max 1 Cathode A 0.590 0.620 14.99 15.75 2 Anode B 0.380 0.420 9.65 10.67 3 Gate C 0.178 0.188 4.52 4.78 4 Anode D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 J 0.018 0.024 0.46 0.61 K 0.540 0.575 13.72 14.61 L 0.060 0.075 1.52 1.91 N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 Ordering Information Device Package Shipping TO-220AB (Pb-Free) 500 Units / Box MCR218–2G MCR218–4G MCR218-6G 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19
MCR218-4G 价格&库存

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MCR218-4G
  •  国内价格 香港价格
  • 1+35.147441+4.55088

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MCR218-4G
    •  国内价格
    • 1+1.87424
    • 200+0.74790
    • 500+0.72285
    • 1000+0.71054

    库存:0

    MCR218-4G

    库存:0