Thyristor Datasheet
MCR25DG, MCR25MG, MCR25NG
Silicon Controlled Rectifiers
Pb
Description
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
■ Blocking Voltage to 800 Volts
■ On−State Current Rating of
25 Amperes RMS
■ High Surge Current Capability
− 300 Amperes
■ Rugged Economical
TO−220AB Package
■ Minimum and Maximum
Values of IGT, VGT, and IH
Specified for Ease of Design
■ High Immunity to dv/dt − 100
V/μsec Minimum at 125°C
■ These are Pb−Free Devices
■ Glass Passivated Junctions
for Reliability and Uniformity
Additional Information
Functional Diagram
G
K
A
Resources
Accessories
Samples
Pin Out
4
TO-220AB
1
1
23
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/13/21
Thyristor Datasheet
MCR25DG, MCR25MG, MCR25NG
Silicon Controlled Rectifiers
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
MCR25DG
MCR25MG
MCR25NG
Peak Repetitive Off−State Voltage (Note 1)
(− 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
Value
VDRM,
VRRM
On-State RMS Current (180º Conduction Angles; TC = 80°C)
IT
(RMS)
Unit
400
600
800
25
A
V
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
ITSM
300
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
373
A²sec
Forward Peak Gate Power (Pulse Width ≤ 1.0 µsec,TC = 80°C)
PGM
20.0
W
PGM (AV)
0.5
W
Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 80°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
-40 to 125
°C
Storage Temperature Range
Tstg
-40 to 150
°C
Forward Average Gate Power (t = 8.3 msec, TC = 80°C)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Symbol
Value
Unit
R8JC
R8JA
1.5
62.5
°C/W
TL
260
°C
Junction−to−Case (AC)
Junction−to−Ambient
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IDRM,
IRRM
-
-
0.01
2.0
mA
TJ = 25°C
TJ = 125°C
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Peak Forward On−State Voltage (Note 2) (ITM = 50 A)
Characteristic
VTM
_
_
1.8
V
mA
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω)
IGT
4.0
12
30
Holding Current (Anode Voltage = 12 V, Initiating Current = 200 mA)
IH
5.0
13
40
mA
Latch Current (VD = 12 V, IG = 30 mA)
IL
_
35
80
mA
VGT
0.5
0.67
1.0
V
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Critical Rate of Rise of Off−State Voltage
(VD = 67% of Rated VDRM, Exponential Waveform, Gate Open, TJ = 125ºC)
dv/dt
100
250
−
V/µs
Critical Rate of Rise of On−State Current
(IPK = 50 A, Pw = 30 µsec, diG/dt = 1 A/µsec, Igt = 50 mA
di/dt
−
−
50
A/µs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance
under different conditions.
2. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
2
may not be indicated by the Electrical Characteristics if operated
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/13/21
Thyristor Datasheet
MCR25DG, MCR25MG, MCR25NG
Silicon Controlled Rectifiers
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
Figure 2.
Typical Gate Trigger Voltage vs Junction Temperature
Figure 3.
Typical On−State Characteristics
Figure 4.
Transient Thermal Response
R(t) TRANSIEN T THERMAL R (NORMALIZED)
Figure 1.
Typical Gate Trigger Current vs Junction Temperature
1
Z
0.1
JC(t)
R
JC
R(t)
0.01
0.1
3
1
10
100
t, TIME (ms)
1000
1 104
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/13/21
Thyristor Datasheet
MCR25DG, MCR25MG, MCR25NG
Silicon Controlled Rectifiers
Figure 7.
Typical RMS Current Derating
Figure 8.
On State Power Dissipation
Figure 9.
Typical Exponential Static dv/dt Versus Peak Voltage
Figure 10.
Typical Exponential Static dv/dt Vs Junction Temperature
1200
2500
2000
STATIC dv/dt (V/us)
STATIC dv/dt (V/us)
Gate Cathode Open
,
(dv/dt does not depend on RGK
)
Gate-Cathode Open,
)
(dv/dt does not depend on RGK
1000
800
85°C
600
100°C
110°C
400
1500
VPK = 275
1000
TJ = 125°C
VPK = 600
VPK = 400
500
200
VPK = 800
0
200
300
400
500
600
700
0
800
80
VPK , Peak Voltage (Volts)
85
90
95
100 105 110
115
TJ , Junction Temperature(°C )
120
125
Figure 11.
Maximum Non−Repetitive Surge Current
I TSM, SURGE CURRENT (AMPS)
300
1 CYCLE
280
260
240
220
200
TJ=125° C f=60 Hz
180
160
1
2
3
4
5
6
7
NUMBER OF CYCLES
8
9
10
4
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/13/21
Thyristor Datasheet
MCR25DG, MCR25MG, MCR25NG
Silicon Controlled Rectifiers
Dimensions
B
F
4
Q
12
Part Marking System
SEATING
PLANE
C
T
S
4
TO-220AB
Case 221A
Style 3
U
3
H
K
Z
1
R
L
V
23
J
G
D
N
Dim
YMAXX
MCR25xG
AKA
A
Inches
Millimeters
Y
M
A
AKA
G
=Year
=Month
=Assembly Site
=Diode Polarity
=Pb-Free Package
Pin Assignment
Min
Max
Min
Max
1
Cathode
A
0.590
0.620
14.99
15.75
2
Anode
B
0.380
0.420
9.65
10.67
3
Gate
C
0.178
0.188
4.52
4.78
4
Anode
D
0.025
0.035
0.64
0.89
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.41
2.67
H
0.110
0.130
2.79
3.30
J
0.018
0.024
0.46
0.61
K
0.540
0.575
13.72
14.61
L
0.060
0.075
1.52
1.91
N
0.195
0.205
4.95
5.21
Q
0.105
0.115
2.67
2.92
R
0.085
0.095
2.16
2.41
S
0.045
0.060
1.14
1.52
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
Ordering Information
Device
MCR25DG
MCR25MG
MCR25NG
Package
Shipping
TO−220AB
(Pb−Free)
1000 Units / Box
1. Dimensioning and tolerancing per ansi y14.5m, 1982.
2. Controlling dimension: inch.
3. Dimension z defines a zone where all body and lead irregularities are allowed.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
5
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/13/21
