MCR68-2G

MCR68-2G

  • 厂商:

    HAMLIN

  • 封装:

    TO-220-3

  • 描述:

    MCR68-2G

  • 数据手册
  • 价格&库存
MCR68-2G 数据手册
Thyristor Datasheet MCR68−2 Silicon Controlled Rectifiers Pb Description Designed for overvoltage protection in crowbar circuits. Features ■ High Capacitor Discharge Current, 300 Amps ■ Glass-Passivated Junctions for Greater Parameter Stability and Reliability ■ Pb−Free Package is Available ■ Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current ■ Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability Additional Information Pin Out Resources Accessories Samples Functional Diagram MT 2 MT 1 1 G 1 2 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/14/21 Thyristor Datasheet MCR68−2 Silicon Controlled Rectifiers Maximum Ratings (TJ = 25 °C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (− 40 to 125°C, Gate Open) Symbol Value Unit VDRM, VRRM 50 V IT (RMS) 12 A ITM 300 A IT(AV) 8.0 A ITSM 100 A I 2t 40 A²sec MCR68-2 On-State RMS Current (180º Conduction Angles; TC = 85ºC) Peak Discharge Current (Note 2) Average On-State Current (180º Conduction Angles; TC = 85ºC) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 80°C) IGM 2.0 A Forward Peak Gate Power (Pulse Width ≤ 1.0 µsec, TC= 85°C) PGM 20 W Forward Average Gate Power (t = 8.3 ms, TC = 85ºC) PG(AV) 0.5 W Operating Junction Temperature Range TJ -40 to +125 °C Storage Temperature Range Tstg -40 to +150 °C − 8.0 in. lb. Mounting Torque Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. Thermal Characteristics Rating Symbol Value Unit RƟJC RƟJA 2.0 60 °C/W TL 260 °C Junction−to−Case (AC) Junction−to−Ambient Thermal Resistance, Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Electrical Characteristics - OFF (TJ = 25 °C unless otherwise noted) Characteristic Peak Repetitive Forward or Reverse Blocking Current (VD = VDRM = VRRM; Gate Open) TJ = 25 °C TJ = 125 °C Symbol Min Typ Max IDRM, IRRM - - 0.01 - - 2.0 Unit mA Electrical Characteristics - ON (TJ = 25 °C unless otherwise noted) Characteristic Peak Forward On−State Voltage (ITM = 24 A) (Note 3) (ITM = 300 A, tw = 1 ms) (Note 4) Symbol Min Typ Max Unit VTM - 6.0 2.2 - V Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω) IGT 2.0 7.0 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL = 100 Ω) VGT - 0.65 1.5 V Gate Non−Trigger Voltage (VD=12 Vdc, RL=100 Ω, TJ=125 °C) VGD 0.2 0.40 - V Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open)) IH 3.0 15 50 mA Latch Current (VD = 12 V, IG = 150 mA) IL - - 60 mA Gate Controlled Turn-On Time (Note 5) (VD = Rated VDRM, IG = 150 mA) (ITM = 24 A Peak) tGT - 1.0 - µs 2 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/14/21 Thyristor Datasheet MCR68−2 Silicon Controlled Rectifiers Dynamic Characteristics Characteristic Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125ºC) Critical Rate of Rise of On−State Current IG = 150 A TJ = 125ºC Symbol Min Typ Max Unit dv/dt 10 − − V/µs di/dt − − 75 A/µs 3. Pulse duration ≤ 300 µs, duty cycle ≤ 2%. 4. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 5. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current Figure 1. Peak Capacitor Discharge Current Figure 2. Peak Capacitor Discharge Current Derating 1000 300 200 100 50 20 0.5 1.0 2.0 5.0 10 20 50 t, Pulse Current Duration (ms) Figure 3. Current Derating Figure 4. Maximum Power Dissipation 3 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/14/21 Thyristor Datasheet MCR68−2 Silicon Controlled Rectifiers Figure 5. Thermal Response Figure 6. Gate Trigger Current Figure 7. Gate Trigger Voltage Figure 8. Holding Current 4 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/14/21 Thyristor Datasheet MCR68−2 Silicon Controlled Rectifiers Part Marking System Dimensions SEATING PLANE B F 4 Q 12 4 C T S A U 3 TO 220AB H 1 K Z YMAXX MCR68-2G AKA 2 3 Y M A AKA G R L V J =Year =Month =Assembly Site =Diode Polarity =Pb-Free Package G D N Inches Dim Millimeters Pin Assignment Min Max Min Max 1 Cathode A 0.590 0.620 14.99 15.75 2 Anode B 0.380 0.420 9.65 10.67 3 Gate C 0.178 0.188 4.52 4.78 4 Anode D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 J 0.018 0.024 0.46 0.61 K 0.540 0.575 13.72 14.61 L 0.060 0.075 1.52 N 0.195 0.205 Ordering Information Device Package Shipping 1.91 MCR68–2 4.95 5.21 MCR68–2G TO−220AB (Pb−Free) 1000 Units / Box Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 1. Dimensioning and tolerancing per ansi y14.5m, 1982. 2. Controlling dimension: inch. 3. Dimension z defines a zone where all body and lead irregularities are allowed. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 5 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/14/21
MCR68-2G 价格&库存

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MCR68-2G
    •  国内价格
    • 1+8.81570
    • 10+6.78678
    • 100+5.62401
    • 500+5.51723

    库存:0

    MCR68-2G
    •  国内价格 香港价格
    • 1+18.163171+2.34983
    • 10+11.6184610+1.50312
    • 100+7.90631100+1.02287
    • 500+6.31691500+0.81724
    • 1000+5.805721000+0.75111
    • 2000+5.556822000+0.71891

    库存:1681

    MCR68-2G
      •  国内价格
      • 10+8.41543
      • 130+8.24880
      • 250+8.08218

      库存:270