Thyristors Datasheet
MCR69-2, MCR69-3
Silicon Controlled Rectifiers – 400V - 800V
Pb
Description
Designed for overvoltage protection in crowbar circuits.
Features & Benefits
■ High Capacitor Discharge
Current, 750 Amps
■ Glass-Passivated Junctions
for Greater Parameter
Stability and Reliability
■ Pb−Free Packages are
Available
■ Center-Gate Geometry for
Uniform Current Spreading
Enabling High Discharge
Current
■ Small Rugged, Thermowatt
Package Constructed for
Low Thermal Resistance and
Maximum Power Dissipation .
and Durability
Additional Information
Pin Out
Resources
Accessories
4
Samples
TO-220AB
Case 221A
Style 3
Functional Diagram
G
A
K
1
1
23
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/21/21
Thyristors Datasheet
MCR69-2, MCR69-3
Silicon Controlled Rectifiers – 400V - 800V
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to +125°C, Gate Open)
Part Number
Symbol
Value
Unit
MCR169-2
MCR69-3
VDRM,
VRRM
50
100
V
A
Peak Discharge Current (Note 2)
ITM
750
IT (RMS)
25
A
Average On-State Current (180° Conduction Angles; TC = 80°C)
IT(AV)
16
A
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C)
ITSM
300
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t
375
A2sec
Forward Peak Gate Current (t ≤ 1.0 µs, TC = 85°C)
IGM
2.0
A
Forward Peak Gate Power (t ≤ 1.0μs, TC = 85°C)
PGM
20
W
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
–
8.0
in. lb.
On-State RMS Current (180° Conduction Angles; TC = 85°C)
Mounting Torque
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limitsare
exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse.
3. Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value, TJ = 125°C.
Thermal Characteristics
Characterstic
Symbol
Value
Thermal Resistance, Junction-to-Case
RƟJC
1.5
Thermal Resistance, Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
RƟJA
60
TL
260
Unit
°C/W
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
IDRM
IRRM
-
-
10
µA
-
-
2.0
mA
TJ = 25°C
Peak Repetitive Forward or Reverse Blocking Current
(VAK = VDRM = VRRM; Gate Open)
TJ = 125°C
Max
Unit
Electrical Characteristics - ON
Characteristic
Peak Forward On−State Voltage
Symbol
(Note 4) (ITM = 50 A)
(ITM = 750 A, tw = 1 ms)
(Note 5)
VTM
Min
Typ
Max
−
–
1.8
−
6.0
−
Unit
V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
IGT
2.0
7.0
30
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ω)
VGT
−
0.65
1.5
V
Gate Non-Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ω, TJ = 125ºC)
VGD
0.2
0.40
–
V
Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
3.0
15
50
mA
Latch Current (VD = 12 VDC, IG = 150 mA)
IL
–
–
60
mA
Gate Controlled Turn-On Time (Note 6) (VD = Rated VDRM, IG = 150 mA)
(ITM = 50 A Peak)
tgt
–
1.0
–
µs
2
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/21/21
Thyristors Datasheet
MCR69-2, MCR69-3
Silicon Controlled Rectifiers – 400V - 800V
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
10
–
−
V/µs
Critical Rate of Rise of On−State Current IG = 150 mA , TJ = 125°C
di/dt
–
–
100
A/µs
4. Pulse duration ≤ 300 µs, duty cycle ≤ 2%.
5. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse.
6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
Figure 1. Typical RMS Current Derating
Figure 2. Peak Capacitor Discharge Current Derating
Figure 3. Current Derating
Figure 4. Maximum Power Dissipation
3
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/21/21
Thyristors Datasheet
MCR69-2, MCR69-3
Silicon Controlled Rectifiers – 400V - 800V
)
r(t),TRANSIENT THERMAL RESISTANCE( NORMALIZED
Figure 5.
Thermal Response
1
0.7
0.5
0.3
0.2
Z JC(t) = R JC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 05
.3
01
.
23
5
10
20
30
0
50
10
0
20
0
30
0
50
1k
2 k 3kk
5
10 k
t, TIME (ms)
Figure 6.
Gate Trigger Current
Figure 7.
Gate Trigger Voltage
Figure 8.
Holding Current
4
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/21/21
Thyristors Datasheet
MCR69-2, MCR69-3
Silicon Controlled Rectifiers – 400V - 800V
Dimensions
B
F
4
Q
12
Part Marking System
SEATING
PLANE
C
T
S
4
A
TO-220AB
Case 221A
Style 3
U
3
H
K
Z
1
R
L
V
23
J
G
D
N
Dim
Inches
Millimeters
MCR69
Y
M
A
AKA
G
YMAXX
MCR69x
AKA
=Device Code
=Year
=Month
=Assembly Site
=Diode Polarity
=Pb-Free Package
Pin Assignment
Min
Max
Min
Max
1
Cathode
A
0.590
0.620
14.99
15.75
2
Anode
B
0.380
0.420
9.65
10.67
3
Gate
C
0.178
0.188
4.52
4.78
4
Anode
D
0.025
0.035
0.64
0.89
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.41
2.67
Ordering Information
H
0.110
0.130
2.79
3.30
Device
Package
J
0.018
0.024
0.46
0.61
MCR69-2
TO-220AB
K
0.540
0.575
13.72
14.61
L
0.060
0.075
1.52
1.91
MCR69-2G
TO-220AB
(Lead-Free)
N
0.195
0.205
4.95
5.21
MCR69-3
TO-220AB
Q
0.105
0.115
2.67
2.92
MCR69-3G
TO-220AB
(Lead-Free)
R
0.085
0.095
2.16
2.41
S
0.045
0.060
1.14
1.52
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
Shipping
1000 / Box
1. Dimensioning and tolerancing per ansi y14.5m, 1982.
2. Controlling dimension: inch.
3. Dimension z defines a zone where all body and lead irregularities are allowed.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
5
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/21/21
