MCR718T4G

MCR718T4G

  • 厂商:

    HAMLIN

  • 封装:

    TO-252(DPAK)

  • 描述:

    THYRISTOR SCR 4A 600V DPAK

  • 数据手册
  • 价格&库存
MCR718T4G 数据手册
Thyristors Surface Mount – 400V - 600V > MCR716, MCR718 MCR716, MCR718 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Small Size • Passivated Die for Reliability and Uniformity • Low Level Triggering and Holding Characteristics • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • Pb−Free Packages are Available Pin Out Functional Diagram 4 4 1 2 3 G A 1 2 3 K Additional Information Datasheet Resources Samples © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount – 400V - 600V > MCR716, MCR718 Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ =− 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) VDRM, VRRM MCR716 Unit 400 V 600 MCR718 On-State RMS Current (All Conduction Angles; TC = 90°C) Value IT 4.0 A IT(AV) 2.6 A ITSM 25 A I 2t 2.6 A²sec PGM 0.5 W Forward Average Gate Power (t = 8.3 msec, TC = 90°C) PGM (AV) 0.1 W Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 90°C) IGM 0.2 A Operating Junction Temperature Range TJ -40 to +110 °C Storage Temperature Range Tstg -40 to +150 °C Average On−State Current (180° Conduction Angles; TC = 90°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) (RMS) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 10. µsec,TC = 90°C) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Thermal Resistance, Junction−to−Case R8JC 3.0 Thermal Resistance, Junction−to−Ambient (Note 2) R8JA 80 TL 260 Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds Unit °C/W °C © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount – 400V - 600V > MCR716, MCR718 Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted) Characteristic Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM, RGK = 1.0 kΩ Symbol Min Typ Max TJ = 25°C IDRM, - - 10 TJ = 110°C IRRM - - 200 Unit µA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Reverse Gate Blocking Voltage (IGR = 10 µA) VGRM 10 12.5 18 V Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM − − 1.2 µA − 1.3 1.5 − 1.5 2.2 1.0 25 75 _ _ 300 0.3 0.55 0.8 − − 1.0 0.2 − − 0.4 1.0 5.0 − − 10 − − 5.0 − − 10 2.0 5.0 (ITM = 5.0 A Peak) Peak Forward On−State Voltage (Note 4) (ITM = 8.2 A Peak) (TJ = 25°C) Gate Trigger Current (Continuous dc) (Note 5) (VAK = 12 Vdc, RL = 30 Ω) (TJ = −40°C) V VTM IGT µA ( TJ = 25°C) Gate Trigger Voltage (Continuous dc) (VD = 12 VDC, RL = 30 Ω) (Note 5) (TJ = −40°C) VGT (TJ = 110°C) Holding Current ( TJ = 25°C) (VD = 12 V, Initiating Current = 200 mA, RGK = 1 kΩ) (TJ = −40°C) Latching Current IH (VD = 12 VDC, IG = 2.0 mA,TC = 25°C) IL (VD = 12 VDC, IG = 2.0 mA,TC = -40°C) Total Turn−On Time (Source Voltage = 12 V, RS = 6.0 kΩ, IT = 8 A(pk), RGK = 1.0 kΩ) (VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 µs) tgt _ V mA mA µs Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off−State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, RGK = 1.0 kQ, TJ = 110°C) dv/dt 5.0 10 − V/µs Critical Rate of Rise of On−State Current (IPK = 50 A, Pw = 40 sec, diG/dt = 1 A/sec, Igt = 50 mA di/dt − − 100 Aµs 2. Case 369C, when surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or RGK = 1.0 kQ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 5. RGK current not included in measurements. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount – 400V - 600V > MCR716, MCR718 Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current Anode + VTM VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH +C urrent Holding Current on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode IH +V oltage IDRM at VDRM Forward Blocking Region (off state) Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation Figure 3. On−State Characteristics Figure 4. Transient Thermal Response © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount – 400V - 600V > MCR716, MCR718 Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger Voltage vs Junction Temperature 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) IGT, GATE TRIGGER CURRENT ( A) 35 30 25 20 15 -40 -20 0 20 40 60 80 0.5 0 100 110 -40 -20 TJ, JUNCTION TEMPERATURE °( C) Figure 7. Typical Holding Current vs Junction Temperature 40 60 80 100 110 2.0 IL , LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) 0 Figure 8. Typical Latching Current vs Junction Temperature 2.0 1.5 1.0 0.5 0 -40 02 TJ, JUNCTION TEMPERATURE °( C) -200 20 40 60 TJ, JUNCTION TEMPERATURE °( C) 80 100 110 1.5 1.0 0.5 0 -40 -200 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE °( C) © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount – 400V - 600V > MCR716, MCR718 Dimensions Soldering Footprint 6.20 0.244 SEATING PLANE C B V 2.58 0.101 E R 4 12 5.80 0.228 Z A S 3 3.0 0.118 1.6 0.063 6.172 0.243 U K SCALE 3:1 F J L H D 2 PL M 0.13(0.005)T G Dim Inches Part Marking System Millimeters Min Max Min Max A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L mm inches 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− 4 1 2 DPAK CASE 369C STYLE 4 3 Y= WW MCR71x G= Y ear = Work Week = Device Code x= 6 or 8 Pb Free Package Pin Assignment 1 Cathode 2 Anode 3 Gate 4 Anode Ordering Information Device Package MCR716T4 DPAK MCR716T4G DPAK (Pb−Free) MCR718T4 DPAK MCR718T4G DPAK (Pb−Free) 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. YWW MCR 71xG Shipping 2500 / Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17
MCR718T4G 价格&库存

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MCR718T4G
    •  国内价格
    • 1+7.32550

    库存:1