MCR72-6G

MCR72-6G

  • 厂商:

    HAMLIN

  • 封装:

    TO-220-3

  • 描述:

    专为工业和消费应用而设计,如温度、光线和速度控制;过程控制和远程控制;报警系统;电容放电电路以及微处理器(MPU)接口。

  • 数据手册
  • 价格&库存
MCR72-6G 数据手册
Thyristors 8Amps Sen SCR MCR72-3, MCR72-6, MCR72-8 Pb Description Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Features • Center Gate Geometry for Uniform Current Density • All Diffused and GlassPassivated Junctions for Parameter Uniformity and Stability • Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Low Trigger Currents, 200 A Maximum for Direct Driving from Integrated Circuits • These are Pb−Free Devices Functional Diagram Pin Out G 1 K A 4 TO-220AB Case 221A Style 4 Additional Information 23 Datasheet Resources Samples © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/27/20 Thyristors 8Amps Sen SCR Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDRM, VRRM 100 400 600 V IT (RMS) 8.0 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C ITSM 100 A Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A²s Forward Peak Gate Voltage (Pulse Width ≤ 10 µsec, TC= 83°C) VGM ±5.0 V Forward Peak Gate Current (Pulse Width ≤ 10 µsec, TC= 83°C) IGM 1.0 A Forward Peak Gate Power (Pulse Width ≤ 10 µsec, TC= 83°C) PGM 5.0 W Average Gate Power (t = 8.3 ms, TC = 83ºC) Peak Repetitive Off−State Voltage (Note 1) (− 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR72-3 MCR72-6 MCR72-8 On-State RMS Current (180º Conduction Angles; TC = 83ºC) PG(AV) 0.75 W Operating Junction Temperature Range TJ -40 to +110 °C Storage Temperature Range Tstg -40 to +150 °C − 8.0 in. lb. Mounting Torque Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Symbol Value Thermal Resistance, Junction-to-Case Characterstic RƟJC 2.2 Thermal Resistance, Junction-to-Ambient RƟJA 60 TL 260 Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Unit °C/W °C Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ IDRM IRRM - - 10 - - 500 ICCH 4 4 - TJ = 25°C Peak Repetitive Blocking Current (VAK = VDRM = VRRM; RGK=1KΩ) TJ = 110°C High Logic Level Supply Current from VCC Max Unit µA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VTM _ 1.7 2.0 V Gate Trigger Current (Continuous dc) (Note 3) (VD = 12 V; RL = 100 Ω) IGT _ 30 200 µA Gate Trigger Voltage (Continuous dc) (Note 3) (VD = 12 V; RL = 100 Ω) VGT _ 0.5 1.5 V Gate Trigger Non-Trigger Voltage (VD = 12 Vdc, RL = 100 Ω, TJ = 110°C) VGD 0.1 _ _ V Holding Current (VD = 12 V, Initiating Current = 200 mA, RGK = 1kΩ) IH _ _ 6.0 mA Gate Controlled Turn-On Time (Note 5) (VD = Rated VDRM, ITM = 16 A, IG = 2 mA) tgt _ 1.0 _ µs Peak Forward On−State Voltage (ITM = 16 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/27/20 Thyristors 8Amps Sen SCR Dynamic Characteristics Characteristic Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) Symbol Min Typ Max Unit dv/dt - 10 − V/µs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Ratings apply for negative gate voltage or RGK = 1KΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 3. RGK current not included in measurement. Voltage Current Characteristic of SCR +Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM IRRM at VRRM IH Quadrant 3 Main Terminal 2- Quadrant 1 Main Terminal 2+ IH Off State +Voltage IDRM at VDRM VTM Figure 2. On−State Power Dissipation PAV, Average Power Dissipation (Watts) Figure 1. Average Current Derating On State 16 dc 12 α 180º α = Conduction Angl e 8.0 α = 30º 90º 60º 4.0 0 0 2.0 4.0 6.0 8.0 IT(AV), Average On-State Current (Amp) Figure 3. Normalized Gate Current Figure 4. Gate Voltage © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/27/20 Thyristors 8Amps Sen SCR Part Marking System Dimensions TO-220 Case 221A-01 Issue O TO-220 Case 221A-09 Issue AH 4 TO-220AB Case 221A Style 3 SEATING PLANE B F 12 S 1 4 Q C T A 4 4 U 3 H TO-220AB Case 221A Style 3 K Z TO-220AB Case 221A Style 3 YMAXX MCR72-6TG AKA R L 1 V G 23 J 1 N Inches 23 =Device Code MCR72-x Y M A AKA G D Dim YMAXX MCR72-xG AKA 23 =Year =Month =Assembly Site =Diode Polarity =Pb-Free Package Millimeters Min Max Min Max A 0.590 0.620 14.99 15.75 B 0.380 0.420 9.65 10.67 C 0.178 0.188 4.52 4.78 D 0.025 0.035 0.64 0.89 3.73 MCR72-6T Y M A AKA G =Device Code =Year =Month =Assembly Site =Diode Polarity =Pb-Free Package Pin Assignment 1 Cathode 2 Anode 3 Gate 4 Anode F 0.142 0.147 3.61 G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 J 0.018 0.024 0.46 0.61 K 0.540 0.575 13.72 14.61 Device L 0.060 0.075 1.52 1.91 N 0.195 0.205 4.95 5.21 MCR72−3G Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 Ordering Information MCR72−6G MCR72−6TG MCR72−8G Package Shipping TO−220AB (Pb−Free) 500 Units / Box MCR72−8TG 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/27/20
MCR72-6G 价格&库存

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MCR72-6G
  •  国内价格 香港价格
  • 1+19.474861+2.51937
  • 10+12.5189410+1.61952
  • 100+8.55288100+1.10645
  • 500+6.85432500+0.88671
  • 1000+6.308301000+0.81608
  • 2000+6.125782000+0.79247

库存:1383