MCR8DCNT4G

Thyristors Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Small Size • Passivated Die for Reliability and Uniformity • Low Level Triggering and Holding Characteristics • Available in Two Package Styles Surface Mount Lead Form − Case 369C • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Pin Out Body Model, 3B > 8000 V Machine Model, C > 400 V • Pb−Free Packages are Available Functional Diagram 4 G K A 1 2 3 Additional Information Datasheet Resources Samples © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 Thyristors Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (− 40 to 1125°C, Sine Wave, 50 to 60 Hz, Gate Open) Symbol Value Unit VDRM, VRRM 600 800 V IT MCR8DCM MCR8DCN On-State RMS Current (180ºConduction Angles; TC = 105°C) 8.0 A Average On−State Current (180° Conduction Angles; TC = 105°C) IT(AV) 5.1 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 80 A Circuit Fusing Consideration (t = 8.3 ms) I2t 26 A²sec Forward Peak Gate Power (Pulse Width ≤ 10 µsec,TC = 105°C) (RMS) PGM 5.0 W PGM (AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 105°C) IGM 2.0 A Operating Junction Temperature Range TJ -40 to 125 °C Storage Temperature Range Tstg -40 to 150 °C Forward Average Gate Power (t = 8.3 msec, TC = 105°C) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Symbol Value Thermal Resistance, Junction−to−Case Rating RƟJC 2.2 Thermal Resistance, Junction−to−Ambient RƟJA 88 Thermal Resistance, Junction−to−Ambient (Note 2) RƟJA 80 TL 260 Maximum Device Temperature for Soldering Purposes (Note 3) Unit °C/W °C Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted) Characteristic Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM, RGK = 1.0 kΩ Symbol Min IDRM, IRRM TJ = 25°C TJ = 125°C Typ Max - - 0.01 - - 5.0 Unit mA Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Peak On−State Voltage (Note 4) (ITM = 16 A) Symbol Min Typ Max Unit VTM – 1.4 1.8 V Gate Trigger Current (Continuous dc) (Note 5) (VAK = 12 Vdc, RL = 100 Ω) (TJ = 25°C) (TJ = −40°C) IGT 2.0 _ 7.0 _ 15 30 µA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) (VD = 12 V, RL = 100 Ω) (Note 5) ( TJ = 25°C) (TJ = −40°C) (TJ = 125°C) VGT 0.5 _ 0.2 0.65 _ _ 1.0 2.0 _ V Holding Current (VD = 12 V, Initiating Current = 200 mA, RGK = 1 kΩ) ( TJ = 25°C) (TJ = −40°C) IH 4.0 _ 22 _ 30 60 mA Latching Current (VD = 12 V, IG = 2.0 mA, RGK = 1 kΩ) (TJ = 25°C) (TJ = −40°C) IL 4.0 − 22 _ 30 60 mA Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off−State Voltage (VAK = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125ºC) dv/dt 50 200 − V/µs Critical Rate of Rise of On−State Current (IPK = 50 A, Pw = 40 sec, diG/dt = 1 A/sec, Igt = 50 mA di/dt − − 50 A/ms 2. Surface mounted on minimum recommended pad size. 3 1/8" from case for 10 seconds. 4. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 Thyristors Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN Voltage Current Characteristic of SCR +Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current Quadrant 1 Main Terminal 2+ VTM IH Quadrant 3 Main Terminal 2- +Voltage Off State IH IDRM at VDRM VTM Figure 2. On−State Power Dissipation P(AV), AVERAGE POWER DISSI PATION (WATTS) Figure 1. Average Current Derating On State IRRM at VRRM 12 10 180° 8.0 = Conduction Angle 6.0 = 30° 120° 90° dc 60° 4.0 2.0 0 1.0 0 2.0 3.0 4.0 5.0 6.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 4. Transient Thermal Response 1.0 r(t), TRANSIEN T THERMAL RESIST ANCE (NORMALIZED) Figure 3. On−State Characteristics 0.1 Z JC(t) = R JC(t) r(t) 0.01 0.1 1.0 10 100 1000 10 K t, TIME (ms) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 Thyristors Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger Voltage vs Junction Temperature Figure 7. Typical Holding Current vs Junction Temperature Figure 8. Typical Latching Current vs Junction Temperature Figure 9. Exponential Static dv/dt vs Gate−Cathode Resistance © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 Thyristors Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN Dimensions Soldering Footprint A E b3 B 6.20 0.244 c2 4 L3 D 12 L4 C A b2 Z Detail A 5.80 0.228 NOTE 7 c Bottom View Side View b Top View Z H 3 e 2.58 0.102 3.00 0.118 0.005 (0).13 M C 6.17 0.243 1.60 0.063 Bottom View Alternate Construction H GAUGE PLANE L2 SCALE C Seating Plane L mm inches 3: 1 A1 L1 Part Marking System Detail A Rotated 90°C W 4 1 2 Inches Millimeters DPAK-3 Case 369C Style 4 CR 8DCxG YMAXX 3 Dim Min Max Min Max 2.40 A 0.087 0.094 2.20 A1 0.000 0.005 0.00 0.12 b 0.022 0.030 0.55 0.75 b2 0.026 0.033 0.65 0.85 b3 0.209 0.217 5.30 5.50 Y M A AKA G =Year =Month =Assembly Site =Diode Polarity =Pb-Free Package Pin Assignment c 0.019 0.023 0.49 0.59 1 Cathode c2 0.019 0.023 0.49 0.59 2 Anode 5.70 3 Gate 6.60 4 Anode D 0.213 E 0.252 5.40 0.260 6.40 0.091 e H 0.374 L 0.058 2.30 0.406 9.50 0.070 1.47 0.114 L1 L2 0.224 0.019 10.30 1.78 2.90 0.023 0.49 0.59 L3 0.053 0.065 1.35 1.65 L4 0.028 0.039 0.70 1.00 Z 0.154 - 3.90 - 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Ordering Information Device Package MCR8DSMT4 DPAK MCR8DCMT4G DPAK (Pb−Free) MCR8DCNT4 DPAK MCR8DCNT4G DPAK (Pb−Free) Shipping 2500 / Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19