Thyristors Datasheet
MCR8SDG, MCR8SMG, MCR8SNG
Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
Pb
Description
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
■ Sensitive Gate Allows
Triggering by Microcontrollers
and other Logic Circuits
■ Blocking Voltage to 800 V
■ On−State Current Rating of 8
A RMS at 80°C
■ High Surge Current Capability
− 80 A
Additional Information
■ Glass Passivated Junctions
for Reliability and Uniformity
■ Minimum and Maximum
Values of IGT, VGT and IH
Specified for Ease of Design
■ Immunity to dv/dt − 5 V/μsec
Minimum at 110°C
■ These are Pb−Free Devices
■ Rugged, Economical
TO−220AB Package
Pin Out
Resources
Accessories
Samples
4
Functional Diagram
G
A
K
1
1
TO-220AB
Case 221A
Style 4
23
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/24/21
Thyristors Datasheet
MCR8SDG, MCR8SMG, MCR8SNG
Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VDRM,
VRRM
400
600
800
V
IT
8.0
A
MCR8SDG
MCR8SMG
MCR8SNG
Peak Repetitive Off−State Voltage (Note 1)
(− 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
On-State RMS Current (180º Conduction Angles; TC = 80°C)
(RMS)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
ITSM
80
A
Circuit Fusing Consideration (t = 8.33 ms)
I2t
26.5
A²sec
PGM
5.0
W
Forward Peak Gate Power (Pulse Width ≤ 10 µsec,TC = 80°C)
Forward Average Gate Power (t = 8.3 msec, TC = 80°C)
PGM (AV)
0.5
W
Forward Peak Gate Current (Pulse Width ≤ 10 µsec, TC= 80°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
-40 to 110
°C
Storage Temperature Range
Tstg
-40 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Symbol
Value
Thermal Resistance, Junction−to−Case
R8JC
2.2
Thermal Resistance, Junction−to−Ambient
R8JA
62.5
TL
260
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for
10 Seconds
Unit
°C/W
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Characteristic
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VAK = Rated VDRM or VRRM, RGK = 1.0 kΩ
Symbol
Min
Typ
IDRM,
IRRM
-
-
10
-
-
500
TJ = 25°C
TJ = 110°C
Max
Unit
µA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward On−State Voltage (Note 2) (ITM = 16 A)
VTM
-
-
1.8
V
Gate Trigger Current (Continuous dc) (Note 4)
(VD = 12 V; RL = 100 Ω)
IGT
5.0
25
200
µA
Holding Current (Note 3)
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
IH
-
0.5
6.0
mA
mA
Latch Current (Note 4) (VD = 12 V, IG = 200 µA)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
(Note 4)
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 Ω)
IL
TJ = 25°C
TJ = −40°C
TJ = 110ºC
2
VGT
VGD
-
0.6
8.0
0.3
0.65
1.0
-
-
1.5
0.2
-
-
V
V
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/24/21
Thyristors Datasheet
MCR8SDG, MCR8SMG, MCR8SNG
Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
Dynamic Characteristics
Characteristic
Critical Rate of Rise of Off−State Voltage
(VD = 67% VDRM, RGK = 1 KΩ, CGK = 0.1 µF, TJ = 110ºC)
Critical Rate of Rise of On−State Current
(IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 10 mA
Symbol
Min
Typ
Max
Unit
dv/dt
5.0
15
−
V/µs
di/dt
−
−
100
A/µs
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical
Characteristics if operated under different conditions.
2. Ratings apply for negative gate voltage or RGK = 1.0 kQ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant
current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
3. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
4. RGK current not included in measurements.
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
Figure 1.
Typical RMS Current Derating
Figure 2.
On−State Power Dissipation
110
ϒ
12
100
ϒ 120 ϒ
ϒ
60ϒ
6
ϒ
ϒ
60ϒ
ϒ 120 ϒ
ϒ
0
0
0
I
I
3
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/24/21
Thyristors Datasheet
MCR8SDG, MCR8SMG, MCR8SNG
Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
Figure 3.
Typical On−State Characteristics
Figure 4.
Typical Gate Trigger Current vs Junction Temperature
100
60
20
10
0
ϒ
Figure 5.
Typical Gate Trigger Current vs Junction Temperature
Figure 6.
Typical Gate Trigger Voltage vs Junction Temperature
1000
1.0
100
0.6
I
10
1
20
0.2
110
110
20
ϒ
ϒ
Figure 7.
Typical Holding Current vs Junction Temperature
1000
100
IL
10
1
110
ϒ
4
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/24/21
Thyristors Datasheet
MCR8SDG, MCR8SMG, MCR8SNG
Sensitive Gate Silicon Controlled Rectifiers — 400V - 800V
Dimensions
B
F
4
Q
12
Part Marking System
SEATING
PLANE
C
T
S
4
A
TO-220AB
U
3
YMAXX
MCR8SxG
AKA
H
K
Z
1
R
L
V
23
J
G
D
N
Dim
Inches
Millimeters
Y
M
A
AKA
G
=Year
=Month
=Assembly Site
=Diode Polarity
=Pb-Free Package
Pin Assignment
Min
Max
Min
Max
A
0.590
0.620
14.99
15.75
B
0.380
0.420
9.65
10.67
C
0.178
0.188
4.52
4.78
D
0.025
0.035
0.64
0.89
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.41
2.67
1
Cathode
2
Anode
3
Gate
4
Anode
Ordering Information
H
0.110
0.130
2.79
3.30
J
0.018
0.024
0.46
0.61
K
0.540
0.575
13.72
14.61
L
0.060
0.075
1.52
1.91
MCR8SMG
N
0.195
0.205
4.95
5.21
MCR8SNG
Q
0.105
0.115
2.67
2.92
R
0.085
0.095
2.16
2.41
S
0.045
0.060
1.14
1.52
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
Device
Package
Shipping
TO−220AB
(Pb−Free)
1000 Units / Box
MCR8SDG
1. Dimensioning and tolerancing per ansi y14.5m, 1982.
2. Controlling dimension: inch.
3. Dimension z defines a zone where all body and lead irregularities are allowed.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
5
© 2021 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 05/24/21
