MG06100S-BN4MM

Power Module 600V 100A IGBT Module MG06100S-BN4MM RoHS ® Features • H  igh short circuit capability, self limiting short circuit current • F  ree wheeling diodes with fast and soft reverse recovery • V  CE(sat) with positive temperature coefficient • Low switching losses • F  ast switching and short tail current Applications Agency Approvals AGENCY • H  igh frequency switching application AGENCY FILE NUMBER E71639 • Motion/servo control • UPS systems • Medical applications Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature TJ op Test Conditions Operating Temperature Tstg Storage Temperature Visol Insulation Test Voltage CTI Comparative Tracking Index Min Typ -40 -40 AC, t=1min Max Unit 175 °C 150 °C 125 °C 3000 V 350 Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m Weight 160 g Values Unit 600 V Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions VCES Collector - Emitter Voltage TJ=25°C VGES Gate - Emitter Voltage IGBT IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT ±20 V 125 A TC=70°C 100 A tp=1ms 200 A 330 W TC=25°C Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t TJ=25°C 600 V TC=25°C 125 A TC=70°C 100 A tp=1ms 200 A TJ =125°C, t=10ms, VR=0V 1000 A2s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG06100S-BN4MM 1 70 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 100A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min 4.9 Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=1.6mA 5.8 6.5 V VCE(sat) Collector - Emitter Saturation Voltage IC=100A, VGE=15V, TJ=25°C 1.45 1.9 V IC=100A, VGE=15V, TJ=125°C 1.6 1 mA 5 mA 400 nA ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=600V, VGE=0V, TJ=25°C VCE=600V, VGE=0V, TJ=125°C VCE=0V,VGE=±15V, TJ=125°C VCC=300V, IC=100A , VGE=±15V VCE=25V, VGE=0V, f =1MHz Turn - on Delay Time td(on) tr Rise Time td(off) Turn - off Delay Time VCC=300V IC=100A RG =3.3Ω tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current VGE=±15V Inductive Load -400 2 Ω 1.1 μC 6.2 nF 0.19 nF TJ =25°C 70 ns TJ =125°C 80 ns TJ =25°C 20 ns TJ =125°C 20 ns TJ =25°C 260 ns TJ =125°C 290 ns TJ =25°C 70 ns TJ =125°C 70 ns TJ =25°C 0.3 mJ TJ =125°C 0.7 mJ TJ =25°C 2.5 mJ TJ =125°C 3.35 mJ tpsc≤6μS , VGE=15V; TJ=125°C,VCC=360V 500 Junction-to-Case Thermal Resistance (Per IGBT) RthJC V A 0.45 K/W Diode VF Forward Voltage IF=100A , VGE=0V, TJ =25°C 1.55 IF=100A , VGE=0V, TJ =125°C 1.50 IF=100A , VR=300V diF/dt=-5100A/μs TJ =125°C 150 A 8.0 μC 2.25 mJ IRRM Max. Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy RthJC Junction-to-Case Thermal Resistance (Per Diode) MG06100S-BN4MM 1.95 0.75 2 71 V V K/W ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 100A IGBT Module Figure 1: Typical Output Characteristics Figure 2: Typical Output characteristics 200 200 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 160 120 TJ =25°C IC (A) IC (A) 160 80 120 TJ =125°C 80 TJ =125°C 40 40 0 0 0.8 0.4 1.2 1.6 VCE˄V˅ 2.0 0 2.4 Figure 3: Typical Transfer characteristics 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor 200 10 VCC=300V IC=100A VGE=±15V TJ =125°C VCE =20V 160 8 120 80 Eon Eoff (mJ) IC (A) TJ =25°C TJ =125°C 40 0 4 Eoff 2 5 6 7 9 8 VGE˄V˅ 10 0 11 Figure 5: Switching Energy vs. Collector Current 6 5 0 5 10 15 20 RG˄Ω˅ 25 30 Figure 6: Reverse Biased Safe Operating Area 250 VCC=300V RG=3.3Ω VGE=±15V TJ =125°C 200 150 4 IC (A) 7 Eon Eoff (mJ) Eon 6 Eoff 3 2 Eon 100 RG=3.3Ω VGE=±15V TJ =125°C 50 1 0 0 MG06100S-BN4MM 40 120 80 IC˄A˅ 160 0 200 3 72 0 100 200 300 400 VCE˄V˅ 500 600 700 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 100A IGBT Module Figure 7: Diode Forward Characteristics Figure 8: Switching Energy vs. Gate Resistor 200 4.0 160 3.2 IF (A) IF (A) 2.4 80 40 0 Erec (mJ) TJ =125°C 120 1.6 0.8 TJ =25°C 0 0.8 1.2 VF˄V˅ 0.4 1.6 0 2.0 5 10 15 20 25 30 Figure 10: Transient Thermal Impedance 5 1 RG=3.3Ω VCE=300V TJ =125°C Diode IGBT ZthJC (K/W) Erec (mJ) 0 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current 4 IF=100A VCE=300V TJ =125°C 3 2 0.1 0.01 1 0 0 40 80 160 120 IF (A) 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 200 Figure 11: Maximum Continuous Collector Current vs Case Temperature 150 125 100 IC (A) 75 50 ※ According to simulation test result, in TC = 70 ºC , Tj about 108 ºC, the ∆T(TJ -TC ) = 38ºC. 25 0 25 50 75 100 125 150 175 TC (ºC) MG06100S-BN4MM 4 73 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 Power Module 600V 100A IGBT Module Dimensions-Package S Circuit Diagram Packing Options Part Number Marking Weight Packing Mode M.O.Q MG06100S-BN4MM MG06100S-BN4MM 160g Bulk Pack 100 Part Marking System Part Numbering System MG06100 S - BN4 MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MG06100S-BN4MM WAFER TYPE MODULE TYPE G: IGBT VOLTAGE RATING 06: 600V CIRCUIT TYPE 2x(IGBT+FWD) CURRENT RATING PACKAGE TYPE LOT NUMBER Space reserved for QR code 100: 100A MG06100S-BN4MM 5 74 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15