MG06600WB-BN4MM

Power Module 600V 600A IGBT Module MG06600WB-BN4MM RoHS Features • H  igh short circuit capability, self limiting short circuit current • F  ree wheeling diodes with fast and soft reverse recovery • V  CE(sat) with positive temperature coefficient • Low switching losses • F  ast switching and short tail current Applications • H  igh frequency switching application • M  otion/servo control supplies • Medical applications • UPS systems Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters TJ max Max. Junction Temperature Test Conditions Min Typ Max Unit 175 °C TJ op Operating Temperature -40 150 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index AC, t=1min 3000 V 250 Torque Module-to-Sink Recommended (M5) 2.5 Torque Module Electrodes Recommended (M6) 3 Weight 5 N·m 5 N·m 350 g Values Unit Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions TJ=25°C IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT 600 V ±20 V TC=25°C 700 A TC=50°C 600 A tp=1ms 1200 A 1500 W Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t MG06600WB-BN4MM TJ=25°C 600 V TC=25°C 700 A TC=50°C 600 A tp=1ms 1200 A TJ =125°C, t=10ms, VR=0V 17000 A 2s 196 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 Power Module 600V 600A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=9.6mA 4.9 Collector - Emitter IC=600A, VGE=15V, TJ=25°C 1.45 5.8 6.5 V Saturation Voltage IC=600A, VGE=15V, TJ=125°C 1.6 IGBT VGE(th) VCE(sat) IICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) 1 mA VCE=600V, VGE=0V, TJ=125°C 5 mA 400 nA VCE=0V, VGE=±15V, TJ=125°C VCE=25V, VGE=0V, f =1MHz Rise Time td(off) Turn - off Delay Time IC=600A tf Fall Time VGE=±15V VCC=300V RG =2.4Ω Inductive Load Turn - on Energy Turn - off Energy ISC Short Circuit Current RthJC -400 VCE=300V, IC=600A , VGE=±15V tr Eoff V VCE=600V, VGE=0V, TJ=25°C Turn - on Delay Time Eon V 0.68 Ω 6.5 μC 39 nF 1.15 nF TJ=25°C 100 ns TJ=125°C 110 ns TJ=25°C 90 ns TJ=125°C 95 ns TJ=25°C 670 ns TJ=125°C 710 ns TJ=25°C 70 ns TJ=125°C 75 ns TJ=25°C 8.9 mJ TJ=125°C 9.9 mJ TJ=25°C 21.5 mJ TJ=125°C 25 mJ tpsc≤6μS , VGE=15V; TJ=125°C , VCC=360V 3000 Junction-to-Case Thermal Resistance (Per IGBT) A 0.10 K/W Diode VF Forward Voltage tRR Reverse Recovery Time IRRM Max. Reverse Recovery Current Erec Reverse Recovery Energy RthJCD IF=600A, VGE=0V, TJ =25°C 1.55 V IF=600A, VGE=0V, TJ =125°C 1.5 V IF=600A, VR=300V diF/dt=-6000A/µs TJ=125°C 400 ns 300 A 9.3 mJ Junction-to-Case Thermal Resistance (Per Diode) 0.16 K/W Max Unit NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions R25 Resistance Tc=25°C B25/50 MG06600WB-BN4MM 2 97 Min Typ 5 KΩ 3375 K ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 Power Module 600V 600A IGBT Module Figure 1: Typical Output Characteristics for IGBT Inverter Figure 2: Typical Output Characteristics for IGBT Inverter 1200 1200 VGE =19V VGE =17V VGE =15V VGE =13V VGE =11V VGE = 9V VGE =15V 960 720 TJ =25°C IC (A) IC (A) 960 720 TJ =125°C 480 480 TJ =125°C 240 240 0 0 0.4 0.8 1.2 1.6 VCE˄V˅ 2.0 0 2.4 Figure 3: T  ypical Transfer Characteristics for IGBT Inverter 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 1200 200 VCC=300V IC=600A VGE=±15V TJ =125°C VCE =20V 160 960 120 Eon Eoff (mJ) IC (A) TJ =25°C 720 480 TJ =125°C 80 Eoff 40 240 0 5 0 6 7 9 8 VGE˄V˅ 10 11 Figure 5: Switching Energy vs. Collector Current for IGBT Inverter 70 60 50 8 12 16 RG˄Ω˅ 20 24 1200 1000 Eoff 800 30 20 600 RG=2.4Ω VGE=±15V TJ =125°C 400 10 MG06600WB-BN4MM 4 1400 VCE=300V RG=2.4Ω VGE=±15V TJ =125°C 40 0 0 0 Figure 6: R  everse Biased Safe Operating Area for IGBT Inverter IC (A) Eon Eoff (mJ) Eon Eon 200 400 600 800 IC˄A˅ 200 0 1000 1200 3 98 0 100 200 300 400 500 600 700 VCE˄V˅ ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 Power Module 600V 600A IGBT Module Figure 7: Diode Forward Characteristics for Diode Inverter Figure 8: S  witching Energy vs. Gate Resistort for Diode Inverter 1200 14 IF=600A VCE=300V TJ =125°C 12 960 Erec (mJ) 10 IF (A) 720 480 TJ =125°C 240 0 8 6 4 2 TJ =25°C 0 0 0.4 0.8 1.2 VF˄V˅ 1.6 2.0 Figure 9: Transient Thermal Impedance of Diode and IGBT Inverter 0 4 8 12 16 RG˄Ω˅ 20 24 Figure 10: N  TC Characteristics 1 100000 0.1 10000 IGBT R (¡) ZthJC (K/W) Diode 0.01 R 1000 100 0 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) 20 40 80 100 120 140 160 60 TC˄°C˅ Circuit Diagram MG06600WB-BN4MM 4 99 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 Power Module 600V 600A IGBT Module Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q MG06600WB-BN4MM MG06600WB-BN4MM 350g Bulk Pack 60 Part Marking System Part Numbering System MG06600 WB - B N4 MM PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 06: 600V CURRENT RATING MG06600WB-BN4MM ASSEMBLY SITE WAFER TYPE LOT NUMBER CIRCUIT TYPE 2x(IGBT+FWD) Space reserved for QR code PACKAGE TYPE 600: 600A MG06600WB-BN4MM 5 100 ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16